• Journal of Magnetics
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• v.4 no.4
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• pp.119-122
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• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.251-253
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• 2001

This paper presents a fault location algorithm for distribution feeder systems. Distribution feeders include single phase and three phase laterals. The proposed algorithm achieves a high accuracy by continuously updating voltage and current phasor using the symmetrical components and admittance load model.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.393-394
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• 2016

A single-phase ac voltage controller controls the magnitude of ac voltage by regulating the delay angle of the input ac voltage. In this paper, the SCR gate signal generation is digitalized by using AVR, and the delay angle control technique is proposed in order to generate a balanced ac output voltage under unbalanced ac input voltage conditions.

• Proceedings of the KIEE Conference
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• 1998.07a
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• pp.200-204
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• 1998

In this paper, a mathematical model of Brushless DC machine fed by pwm inverter is developed. Dynamic and steady state characteristics of Brushless DC motor is simulated and analyzed: electromagnetic torque, speed, phase voltage, and current. In mathematical modeling, the shaft transformation referencing rotor frame from to "a,b,c" three phase frame to "d,g" two phase frame is described.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.481-489
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• 2004

Poly(triazine bissulfide)s were synthesized from 6-dibutylamino-1,3,5-triazine-2,4-dithiol with bis(4-chloro-3-nitrophenyl)sulfone in the presence of the phase transfer catalyst, and from m-dibromide xylene and p-dibromide xylene with 6-dibutylamino-1,3,5-triazine-2,4-dithiol in the presence of cetyltrimethyl ammonium bromide at $70^{\circ}C$ for 24h. We could acquire the good results about solubility, thermal property, and molecular weight to make cast film. These results are important as base for the synthesis of functionalization polymer material being optical plastic material. The maximum algebra viscosity was 0.57~1.40dl/g at the temperature more than $50{\sim}60^{\circ}C$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.337-340
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• 2007

In the dissertation, a power conversion system for fuel cell is composed of a PWM inverter with LC filter in order to convert fuel cell voltage to a single phase 220[V], In addition, new insulated DC-DC converters are proposed in order that fuel cell voltage is boosted to 380[V]. In this paper, it requires smaller components than existing converters, which makes easy control. The proposed DC-DC converter controls output power by the adjustment of phase-shift width using switch S5 and S6 in the secondary switch, which provides 93-97[%] efficiency in the wide range of output voltage. Fuel cell simulator is implemented to show similar output characteristics to actual fuel cell. Appropriate dead time td enables soft switching to the range where the peak value of excitation current in a high frequency transformer is in accordance with current in the primary circuit. Moreover, appropriate setting to serial inductance La reduces communication loss arisen at light-load generator and serge voltage arisen at a secondary switch and serial diode. Finally, TMS320C31 board and EPLD using PWM switching technique to act a single phase full-bridge inverter which is planed to make alternating current suitable for household.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.665-669
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• 2004

Generally, Slotless PM BLDC drive system is necessary that the three Hall-ICs evenly be distributed around the stator circumference and encoder be installed in case of the 3 phase motor. So, the Hall-ICs are set up in this motor to detect the main flux from the rotor, and the output signal from Hall-ICs is used to drive a power transistor to control the winding current. However, instead of using three Hall-ICs and encoder, we used only two Hall-ICs for the permanent magnet rotor position and for the speed feedback signals, and also for a microcontroller of 16-bit type (80C196KC) with the 3 phase Slotless PM BLDC whose six stator and two rotor designed. Two Hall-IC Hc and $H_B$ are placed on the endplate at 120 degree intervals, and with these elements, we can estimate information of the others phase in sequence through a rotating rotor.