• Elastomers and Composites
• /
• v.50 no.3
• /
• pp.175-183
• /
• 2015

A series of fluorinated aromatic poly(hydroxyamide)s (PHAs) were synthesized by direct polycondensation of diacides containing 2,6-dimethylphenoxy group and quinoxaline ring in the main chain with 2,2-bis-(3-amino-4-hydroxyphenyl) hexafluoropropane. The PHAs had relatively low inherent viscosities in the range of 0.35~0.43 dL/g at $35^{\circ}C$ in DMAc solution. All PHAs exhibited excellent solubility in aprotic solvents such as NMP, DMAc, DMF and DMSO as well as in common organic solvents such as pyridine, THF, and m-cresol at room temperature. However, the poly(benzoxazole)s (PBOs) were quite insoluble in all organic solvents except partially soluble in concentrated sulfuric acid. The PBOs showed glass transition temperatures between 233 and $284^{\circ}C$ by DSC and maximum weight loss temperatures in the range of $536-546^{\circ}C$ by TGA.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1368-1369
• /
• 2006

In this thesis, the minuteness structure, piezoelectric, and dielectric characteristics of Pb[(Co0.5 W0.5) 0.03 (Ni1/3 Nb2/3) 0.07(Zr0.52 Ti0.48)0.9]O3+0.5Wt% MnO2 ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered specimens at $1050[^{\circ}C]$, and its minimum of 20.220[%] in the sintered specimens at $1150[^{\circ}C]$. The mechanical quality coefficient (Qm) marked the maximum of 139.526 at the sintering temperature of $1150[^{\circ}C]$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.5
• /
• pp.453-457
• /
• 2008

In this thesis, piezoelectric properties and sintering properties of PCW-PNN-PZT+0.5 wt%$MnO_2$ ceramics adding $B_2O_3$ after creating the specimens with a general method. The lattice constant from the analysis of crystal structure showed that the crystal structure of ceramic features both rhombohdral and tetragonal structures and that the pychlore structure was decreased with the increase of the sintering temperature. The electromechanical coupling coefficient showed its maximum of 31 % in the sintered specimens at $1050^{\circ}C$, and its minimum of 20 % in the sintered specimens at $1150^{\circ}C$. The mechanical quality coefficient marked the maximum of 139 at the sintering temperature of $1150^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SP
• /
• v.40 no.6
• /
• pp.84-89
• /
• 2003

In this paper, we real-time implemented to the TMS320C5416 the vocoder of variable bit rate applied the SOLA-B algorithm by Henja to the ITU-T G.729A vocoder of 8kbps transmission rate. This proposed method using the SOLA-B algorithm is that it is reduced the duration of the speech in encoding and is played at the speed of normal by extending the duration of the speech in decoding. At this time, we bandied that the interval of cross correlation function if skipped every 3 sample for decreasing the computational amount of SOLA-B algorithm. The real-time implemented vocoder of C.729A and SOLA-B algorithm is represented the complexity of maximum that is 10.2MIPS in encoder and 2.8MIPS in decoder of 8kbps transmission rate. Also, it is represented the complexity of maximum that is 18.5MIPS in encoder and 13.1MIPS in decoder of 6kbps, it is 18.5MIPS in encoder and 13.1MIPS in decoder of 4kbps. The used memory is about program ROM 9.7kwords, table ROM 4.5kwords, RAM 5.1 kwords. The waveform of output is showed by the result of C simulator and Bit Exact. Also, for evaluation of speech quality of the vocoder of real-time implemented variable bit rate, it is estimated the MOS score of 3.69 in 4kbps.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.4
• /
• pp.7-14
• /
• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Journal of the Institute of Electronics Engineers of Korea SP
• /
• v.38 no.3
• /
• pp.304-315
• /
• 2001

In this paper, we peformed the real-time implementation of AMR(Adaptive Multi-Rate) speech coding algorithm which is adopted for IMT-2000 service using TMS320C6201, i.e., a Texas Instrument´s fixed-point DSP. With the ANSI C source code released from ETSI, optimization is performed to make it run in real-time with memory as small as possible using the C compiler and assembly language. Implemented AMR speech codec has the size of 32.06 kWords program memory, 9.75 kWords data RAM memory, and 19.89 kWords data ROM memory. And, The time required for processing one frame of 20 ms length speech data is about 4.38 ms, and it is short enough for real-time operation. It is verified that the decoded result of the implemented speech codec on the DSP is identical with the PC simulation result using ANSI C code for test sequences. Also, actual sound input/output test using microphone and speaker demonstrates its proper real-time operation without distortions or delays.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.21 no.6
• /
• pp.988-997
• /
• 2012

Laser surface hardening is one of core technologies to enhance various characteristics such as the strength, hardness, toughness, abrasion resistance, and fatigue resistance for the mold material. This paper focuses on testing characteristics of the laser heat treatment according to the preheating parameters in case of the SM45C medium carbon steel. In this paper, we assume that the power and travel speed of the laser are 1,800W and 0.5m/min, respectively, and the range of the preheating temperature is $50^{\circ}C{\sim}300^{\circ}C$. From the result of the test, we observed that the hardness width and depth are enhanced as the temperature is increased. Also, the best average hardness was 751.7Hv for the temperature of $100^{\circ}C$.

• 한국ITS학회:학술대회논문집
• /
• 2008.11a
• /
• pp.519-524
• /
• 2008

In this paper, we mainly describe the development of exclusive u-device essentially required to implement new ITS services (taxi call service, service for transportation vulnerable, transport information service, walker's navigator, electronic payment service, call information service etc.). To design this device, Samsung main CPU S3C2440A was selected and large memories (ROM and RAM) which are required for new ITS services are applied. In addition, all of GPS, RFID module, Wi-Fi and Bluetooth functions are included to develop an exclusive device indispensable in the ubiquitous society. For this, in this paper, we first examined detailed design of an exclusive u-device development, and based on the designed contents, the performance of a realized u-device was evaluated. If services are created by linking new ITS services with relevant public institutions or companies, based on application of the exclusive u-device developed as above, they would be expanded to a new blue ocean, expectedly resulting in a big spillover effect in local societies.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.11
• /
• pp.1-11
• /
• 1997

The transient current components of the dRAM are analyzed and the sensing current, data path operation current and DC leakage current are revealed to be the major curretn components. It is expected that the supply voltage of less than 1.5V with low VT MOS witll be used in multi-giga bit dRAM. A low voltage dual VT self-timed CMOS logic in which the subthreshold leakage current path is blocked by a large high-VT MOS is proposed. An active signal at each node of the nature speeds up the signal propagation and enables the synchronous DRAM to adopt a fast pipelining scheme. The sensing current can be reduced by adopting 8 bit prefetch scheme with 1.2V VDD. Although the total cycle time for the sequential 8 bit read is the same as that of the 3.3V conventional DRAM, the sensing current is loered to 0.7mA or less than 2.3% of the current of 3.3V conventional DRAM. 4 stage pipeline scheme is used to rduce the power consumption in the 4 giga bit DRAM data path of which length and RC delay amount to 3 cm and 23.3ns, respectively. A simple wave pipeline scheme is used in the data path where 4 sequential data pulses of 5 ns width are concurrently transferred. With the reduction of the supply voltage from 3.3V to 1.2V, the operation current is lowered from 22mA to 2.5mA while the operation speed is enhanced more than 4 times with 6 ns cycle time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.575-580
• /
• 2007

A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.