• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2565-2570
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• 2010

The orthorhombic $MgB_2C_2$ structure contains well-separated parallel graphite-like $B_2C_2^{2-}$ layers which extend infinitely in two dimensions. Three possible ways to distribute B and C atoms in the hexagonal sublattice sites are adopted. Band structures for the hypothetical distribution patterns are examined to assess the electronic stability of these phases and to account for the observed arrangement by means of extended Huckel tight-binding calculations. The preferred choice is the layer with B and C alternating strictly so that B is nearest neighbor to C and vice versa. A rationale for this is given. Due to the alternation of B and C within the honeycomb layers, $MgB_2C_2$ is a band insulator, which through partial substitution of Mg with Li, is predicted to turn metallic with holes in the $\sigma$ bands at the Fermi level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.6
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• pp.609-614
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• 2009

The TT&C communication subsystem of STSAT-3 is consisted of communication link to send telemetry data of spacecraft to the ground station and receive command data from ground station. The S-band receiver is used to receive command data from ground station, Engineering Qualification Model of S-band receiver has been designed and manufactured. The Designed S-band Receiver uses a single conversion for a simple frequency conversion, including a DC-DC Converter and EMI Filter. Also, Digital demodulation part designed using FPGA and RS-422 data interface. The performance of S-band Receiver in functional and space environments test satisfies the requirements of STSAT-3.

• Journal of the Korea Institute of Military Science and Technology
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• v.19 no.3
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• pp.363-370
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• 2016

This paper proposes a Ku-band multi-mode coupler and its monopulse tracking system, which can be applied to a unmaned aircraft vehicle(UAV) platform. In general, the carrier-to-noise(C/N) level of the beacon signal from a Ku-band commercial satellite is relatively weak compared to that of a military satellite because the Ku-band satellite has been designed for commercial services. Therefore, this paper proposes a coupler and its multi-mode monopulse tracking system satisfying the tracking accuracy under a low C/N environment and analyzes the tracking accuracy. After that, we perform a real satellite tracking test and compare the accuracy of the test with the analysis result before validating the performance of the architecture of the proposed satellite tracking system.

• Journal of Korean Society of Forest Science
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• v.80 no.4
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• pp.383-392
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• 1991

The genetic variation of Pinus densiflora and Pinus thunbergii by Giemsa C-banding was investigated and the results were as follows : 1. From Karyotype analysis of P. densiflora and P. thunbergii by Giemsa C-banding, somatic chromosome numbers of both species were 2n=24. 2. Chromosome of P. densiflora was M-type in arm ratio and they were no variation among individuals but variation in number and position of the secondary constriction and telomere banding among individuals. 3. P. thunbergii showed also M-type in arm ratio of chromosome, however, there was no variation in both number and position of the secondary constriction among individuals. 4. From chromosome C-banding, bands were appeared in the position of centromere and the secondary constriction in both P. densiflora and P. thunbergii. 5. In P. densiflora, the bands were shown on the secondary-constriction in chromosome No. 3, 4 and 7 of all individuals and the bands of the secondary constriction in chromosome No. 1, 2 and 5 showed variation among individuals. In chromosome No. 9, 10 and 11, the bands were shown in telomere and showed variation among individuals. 6. In P. thunbergii, the bands were shown on the secondary constriction in chromosome No. 2, 3, 7 and 8, and were shown no variation among individuals. There was no band on telomere. 7. The genetic variation by C-banding were shown in P. densiflora among individuals but no in P. thunbergii, and were shown on the secondary constriction in chromosome No. 4 of Pinus densiflora and in clnromosome No. 8 of Pinus thunbergii. These are the difference between the two species by C-banding.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.299-299
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• 2016

SiC는 넓은 에너지갭 (Eg=~3.4 eV)을 갖는 반도체로써, 고전압, 고온에서 동작이 가능하여 기존의 Si기반의 파워디바이스를 대체하기 위한 물질로 많은 연구가 이루어지고 있다. 파워 디바이스의 성능 향상을 위해서는 기판과 절연체 사이의 계면에 생성되는 계면 결함을 감소시켜야 한다. 따라서 본 연구에서는 SiC 기판에 high-k 물질인 HfO2를 증착하여 HfO2/SiC 계면에 유도된 결함을 분석하고 이를 감소시킬 수 있는 방법에 대한 연구를 수행하였다. HfO2 박막은 atomic-layer-deposition (ALD) 방법을 이용하여 SiC 기판 위에 $200^{\circ}C$에서 증착하였다. HfO2 박막 증착 후 NH3 분위기에서 rapid thermal annealing 방법을 이용하여 $600^{\circ}C$에서 1분 동안 열처리 진행하였다. Current-voltage (I-V) 측정을 통해 열처리 전 HfO2/SiC의 절연파괴 전압이 약 8.3 V 임을 확인하였다. NH3 열처리 후 HfO2/SiC의 절연파괴 전압이 10 V로 증가하였으며 누설 전류가 크게 감소하는 것을 확인하였다. 또한 capacitance-voltage (C-V) 측정을 통해 열처리 후 flat band voltage가 negative 방향에서 positive 방향으로 이동함을 확인하였고, 이를 통해 NH3 열처리 방법이 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있음을 확인하였다. 전자 구조상의 conduction band edge에 존재하는 결함 준위를 분석하기 위해 x-ray absorption spectroscopy (XAS) 분석을 실시하였고, 열처리 전 HfO2/SiC 계면에 많은 결함 준위가 존재함을 확인하였으며, x-ray photoelectron spectroscopy (XPS) 분석을 통해 이 결함 준위가 oxygen deficiency state과 관련됨을 알 수 있었다. NH3 열처리 후 결과와 비교해보면, oxygen deficiency state가 감소함을 확인하였으며 이로 인해 conduction band edge에 존재하는 결함 준위가 감소함을 알 수 있었다. 따라서, NH3 열처리 방법을 이용하여 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있으며, HfO2/SiC의 물리적, 전기적 특성을 향상시킬 수 있다는 결과를 도출하였다.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.485-488
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• 2005

The 2nd KOrea Multi-Purpose Satellite (KOMPSAT -2) has been developed by Korea Aerospace Research Institute (KARI) since 2000. Multi Spectral Camera (MSC) is the payload for KOMPSAT -2, which will provide the observation imagery around Korean peninsula with high resolution. KOMPSAT-2 has adopted X-band Tracking System (XTS) for transmitting earth observation data to ground station. For this, data which describes and controls the pre-defined motion of each on-board X-Band antenna in XTS, must be transmitted to the spacecraft as S-Band command and it is called as Tracking Parameter Files (TPF). In this paper, the result of the development of TPF Generation S/W for KOMPSAT-2 X-Band Antenna Motion Control.

• The Korean Journal of Physiology
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• v.20 no.2
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• pp.209-217
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• 1986

The functional molecular weight of band 4.5 polypeptide was measured by applying the classical target theory to radiation inactivation data of the cytochalasin B binding. Band 4.5 polypeptides purified from human erythrocyte membranes were irradiated at -45 to $-50^{\circ}C$ with an increasing dose of 1.5 MeV electron beam, and after thawing, cytochalasin B binding activities were assayed. Each activity measured was reduced as a simple exponential function of radiation dose. $D_{37}$, dose appeared to be 6.7 mega rads, from which the target size (radiation sensitive mass) of band 4.5 polypeptide was calculated to be 95,500 daltons. This result with other informations available in literature suggests that band 4.5 polypeptide may exist as a dimer in human erythrocytes.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.983-984
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• 2006

Multi-band VCO with fast response adaptive frequency calibration (AFC) technique is designed in 1.8V $0.18{\mu}m$ CMOS process. The possible operation is verified for 5.8GHz band, 5.2GHz band, and 2.4GHz band using the switchable L-C resonators for 802.11a/b/g WLAN applications. To linearize its frequency-voltage gain, optimized multiple MOS varactor biasing technique is used. In order to operate in each band frequency range with reduced VCO gain, 4-bit digitally controlled switched-capacitor bank is used and a wide-range digital logic quadricorrelator is implemented for fast frequency detector.