• Composites Research
• /
• 제18권2호
• /
• pp.20-29
• /
• 2005

수지의 유리 전이화 온도$(170^{\circ}C)$ 이상에서 복합재 연소관의 굽힘 변형 및 강도를 평가하기 위해 재료의 비선형성과 연속 파손 모드가 고려된 유한요소해석모델이 제시되었고, 해석 모델의 타당성 입증을 위해 연소관과 동일 제작 공법과 적층을 가진 굽힘 시험편을 이용한 4점 굽힘 강도 시험이 수행되었다. 또한 비교해석을 위해 고온에서 복합재 재료물성 시험이 수행되었다. 수지의 유리 전이화 온도 이상에서 수지 관련 재료 물성이 현저하게 저하됨에 따라, $200^{\circ}C$에서 굽힘 시험편의 굽힘 강성은 상온 기준으로 약 $70\%$, 굽힙 강도는 약 $80\%$의 저하율을 나타내었다. 파손 모드가 수지의 유리 전이화 온도 이하에서 바닥 면의 $90^{\circ}$층수지 균열로 시작하여 시편 중앙의 층간 분리로 이어지는 연속 파손모드였으나, 유리천이온도 이상에서는 시편 표면층의 섬유 압축 파손으로 변화되었다 해석을 통해 연속 파손 모드가 잘 구현되었고, 예측한 굽힘 강도와 강성이 시험 견과와 좋은 일치를 보였다

• 한국재료학회지
• /
• 제18권11호
• /
• pp.617-622
• /
• 2008

In this study, the additivity factors of compositions to density and glass transition point ($T_g$) in a $xLi_2O-(1-x)[(1-y)TeO_2-yZnO]$ (0$T_g$ was discussed. As a method for predicting the relation between glass structure and ionic conductivity, density was measured by the Archimedes method. The glass transition point was analyzed to predict the relation between ionic conductivity and the bonding energy between alkali ions and non-bridge oxygen (NBO). The relation equations showing the additivity factor of each composition to the two properties are as follows: Density(g/$cm^3$) = $2.441x_1\;＋\;5.559x_2\;＋\;4.863x_3\;T_g(^{\circ}C)$ = $319x_1\;＋\;247x_2\;＋\;609x_3\;－\;1950x_1x_3$ ($x_1$ : fraction of $Li_2O$, $x_2$ : fraction of $TeO_2$, $x_3$ : fraction of ZnO) The density decreased as $Li_2O$ content increased. This was attributed to change of the $TeO_2$ structure. From this structural result, the electric conductivity of the glass samples was predicted following the ionic conduction mechanism. Finally, it is expected that electric conductivity will increase as the activation energy for ion movement decreases.

• 공업화학
• /
• 제26권1호
• /
• pp.53-58
• /
• 2015

3 phr의 그래핀 옥사이드(GO)를 포함하는 폴리카보네이트(PC)/GO를 클로로포름에서 용액 혼합하여 응고물 침전한 후 240, 260, $280^{\circ}C$의 이축압출기를 이용하여 PC/GO 복합체를 제조하였다. DSC와 TGA 측정결과 PC/GO 복합체의 유리전이 온도($T_g$)의 변화는 거의 없었고, 분해거동을 통해 확인한 열안정성의 경우 $260^{\circ}C$ 압출시편이 우수하게 나타났다. 동적기계적분석(DMA)을 이용한 저장탄성률 측정결과 PC 대비 PC/GO 복합체의 값이 크게 나타났으며 압출온도별로는 큰 차이가 없는 것을 확인하였다. 이들 결과로부터 환원시간에 따른 PC/RGO 복합체의 압출온도를 $260^{\circ}C$로 고정하였다. GO의 환원시간에 따른 PC/RGO 복합체의 화학반응 정도는 $3000cm^{-1}$ 부근에서 나타나는 C-H 신축진동피크를 통해 확인하였고, 환원시간이 1 h일 때의 GO와 유사한 화학반응 정도를 나타내었다. GO의 환원시간에 따른 PC/GO 복합체의 복소점도(complex viscosity)가 감소하는 것을 확인하였으며, 이는 PC-GO 사이의 화학반응에 의한 분산성에 기인한 것으로 주사전자현미경(SEM)을 통해 확인하였다.

• Progress in Superconductivity
• /
• 제9권2호
• /
• pp.177-182
• /
• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• 공업화학
• /
• 제10권2호
• /
• pp.259-262
• /
• 1999

금속 규소와 구리 촉매가 함유된 접촉물과 메탄올의 반응에 의한 메톡시실란의 합성에서의 TMOS 반응 생성속도를 산출하였다. 활성 자리 수의 변화에 따른 영향을 제거하기 위해서 유속 전이 기술을 사용하여 주입되는 메탄올의 유속을 반응도중 급격히 변화시켰다. 실험 결과 TMOS 생성속도에 영향을 미치는 인자는 반응에 참여하는 메탄올 농도가 아닌 접촉물질의 사용량임을 확인하였으며, 이를 바탕으로 TMOS 생성 메카니즘에서 접촉 물질의 표면에서 중간생성물이 형성되는 반응 단계가 반응 율속단계라고 추정되었다. 최적 공정조건에서 규소 1 g당 최대 TMOS 생성속도는 $210^{\circ}C$에서 0.030 (g/min)이었으며, 이때의 활성화 에너지는 값은 8.5 kcal/mol, 반응 생성속도 상수의 온도 의존성은 식 $k=4.09{\times}10^4\;exp$ ($-4.73{\times}10^3/T$)로 나타났다.

• Journal of Welding and Joining
• /
• 제16권6호
• /
• pp.35-43
• /
• 1998

In this paper, the fracture toughness evaluation of the various microstructures such as HAZ, F.L and W.M in weldment of TMCP steel which has the softening zone owing to high heat input welding was carried out by using of the small punch(SP) test. In addition, the fracture toughness with the specimen orientation of rolled TMCP steel was investigated by means of SP test and the crack opening displacement (COD) test and then was compared with that of conventional SM50YB steel. From the results of SP test for TMCP steel, it could be seen that the SP energy transition curves of three different orientation were shifted to higher temperature side in order of S, T and L. But the {TEX}$DBTT_{SP}${/TEX} of each orientation specimen did not show a lot of differences and were quite lower than those of conventional SM50YB steel. The mechanical properties of HAZ structure in weldment of TMCP steel such as hardness, SP energy at room temperature and -196$^{\circ}C$ and the upper shelf energy of SP energy transition curve were lower than those of base metal due to softening. The {TEX}$DBTT_{SP}${/TEX} of each microstructure in weldment of TMCP steel increased in order of HAZ, F.L and W.M against base metal, but all microstructures showed a quite lower {TEX}$DBTT_{SP}${/TEX} than those of SM50YB steel.

• Bulletin of the Korean Chemical Society
• /
• 제34권12호
• /
• pp.3690-3694
• /
• 2013

The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

• Asian Pacific Journal of Cancer Prevention
• /
• 제14권10호
• /
• pp.5805-5810
• /
• 2013

This study was conducted to analyze the molecular mechanisms responsible for anti-proliferation effects of glaucocalyxin A in cultured MCF-7 and Hs578T breast cancer cells. The concentration that reduced cell viability to 50% (IC50) after 72 h treatment was derived and potential molecular mechanisms of anti-proliferation using the IC50 were investigated as changes in cell cycle arrest and apoptosis. Gene and protein expression changes related to apoptosis were investigated by semi-quantitative RT-PCR and western blotting, respectively. Involvement of phosphorylated mitogen-activated protein kinases and JNK signaling in regulation of these molecules was characterized by western blotting. Cell viability decreased in a concentration-dependent manner and the IC50 was determined as $1{\mu}M$ in MCF-7 and $4{\mu}M$ in Hs578T cell. Subsequently, we demonstrated that the GLA-induced MCF-7 and Hst578T cell death was due to cell cycle arrest at the G2/M transition and was associated with activation of the c-jun N-terminal kinase (JNK) pathway. We conclude that GLA has the potential to inhibit the proliferation of human breast cancer cells through the JNK pathway and suggest its application forthe effective therapy for patients with breast cancer.

• 한국표면공학회지
• /
• 제36권1호
• /
• pp.14-21
• /
• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• 멤브레인
• /
• 제28권4호
• /
• pp.221-232
• /
• 2018

Poly(imide siloxane)(Si-PI)와 polyvinylpyrrolidone (PVP)를 혼합한 고분자를 사용하여 실리카가 함유된 탄소 분리막을 제조하였다. 고분자 혼합물의 열분해에 의해 제조 된 다공성 탄소 구조의 특성은 두 고분자의 미세 상 분리 거동과 관련이 있다. Si-PI와 PVP의 고분자 혼합물의 유리 전이 온도(Tg)는 시차 주사 열량계를 사용하여 단일 Tg로 관찰되었다. 또한 $C-SiO_2$ 막의 질소 흡착 등온선을 조사하여 다공성 탄소 구조의 특성을 규명했다. Si-PI/PVP로부터 유도 된 $C-SiO_2$ 막은 IV형 등온선을 나타내었고 중간기공의 탄소 구조와 관련된 히스테리시스 루프를 가지고 있었다. 분자 여과 확인을 위해서, Si-PI/PVP의 비율과 열분해 온도 및 등온 시간과 같은 열분해 조건을 다르게 하여 $C-SiO_2$ 막을 제조하였다. 결과적으로, 120분 간의 등온 시간 동안 $550^{\circ}C$에서 Si-PI/PVP의 열분해에 의해 제조된 $C-SiO_2$ 막의 투과도는 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$)이었으며, $O_2/N_2$ 선택도는 14이었다.