• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.90-94
• /
• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.4
• /
• pp.375-380
• /
• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Korean Chemical Engineering Research
• /
• v.59 no.2
• /
• pp.254-259
• /
• 2021

Optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma under various source powers and pressures were investigated. The F/C ratio of the fluorocarbon film deposited in a high-density C4F8 plasma increased with increasing source power and decreasing pressure due to two-step deposition mechanism. The change in the F/C ratio of the film directly affected the optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma. The refractive index of the fluorocarbon film increased with decreasing source power and increasing pressure contrary to the dependence of the film's F/C ratio on the source power and pressure. This was because the increase in the F/C ratio suppressed electronic polarization and weakened the network structures of the film. The resistivity of the fluorocarbon film showed the same behavior as its F/C ratio. In other words, the resistivity increased with increasing source power and decreasing pressure, resulting from stronger repellence of electrons at higher F/C ratios. This work offers the feasibility of the use of the fluorocarbon films deposited in a high-density C4F8 plasma as an alternative to low dielectric constant materials because the optical and electrical properties of the fluorocarbon film can be directly controlled by its F/C ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.3
• /
• pp.301-306
• /
• 2006

The electron drift velocity W and the product of the longitudinal diffusion coefficient and the gas number density $ND_{L}$ in the $0.525\;\%$ and $5.05\;\%$ $C_{3}F_8-Ar$ mixtures were measured by using the double shutter drift tube with variable drift distance over the E/N range from 0.03 to 100 Td and gas pressure range from 1 to 915 torr. And we determined the electron collision cross sections set for the $C_{3}F_8$ molecule by STEP 1 of electron swarm method using a multi-term Boltzmann equation analysis. Our special attention in the present study was focused upon the vibrational excitation and new excitations cross sections of the $C_{3}F_8$ molecule.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.240-240
• /
• 2015

본 논문에서는 플라즈마 모델링과 식각 표면 분석을 통해 가스 비율 변화에 따른 $CF_4/C_4F_8/Ar$ 유도결합 플라즈마의 특성과 Si 및 $SiO_2$의 식각 메커니즘에 대해 연구하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.305-310
• /
• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.133-133
• /
• 2015

Recently, it has been shown that the ${\omega}B97X-D/aVTZ$ method is strongly recommended as the best practical density functional theory(DFT) for rigorous and extensive studies of saturated or unsaturated $C_4F_8$ species because of its high performance and reliability especially for van der Waals interactions. All the feasible isomerization and dissociation paths of $C_4F_8$ molecules were investigated at this theoretical level and rate constants of their chemical reactions were computed by using variational transition-state theory for a deep insight into $C_4F_8$ reaction mechanisms. Fates and roles of C4F8 molecules and their fragments in plasma phases could be clearly explained based on our computational results.

• Korean Chemical Engineering Research
• /
• v.58 no.1
• /
• pp.52-58
• /
• 2020

Electrochemical characterization and thermal stability were investigated for MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ cathode. The ratio of MgF₂ was controlled by 0.5, 1, 3 wt%. Cyclic voltammetry, charge-discharge profiles, rate capability, cycle life were measured for electrochemical properties. DSC analysis was measured for thermal stability. The first discharge capacities of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ were decreased at 0.1C-rate compared to pristine LiNi_0.8Co_0.15Al_0.05O₂. But the rate capability and cycle life of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ were improved at 2C-rate. In DSC analysis result, the exothermic temperature of MgF₂ coated LiNi_0.8Co_0.15Al_0.05O₂ was increased and peak height was decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.1
• /
• pp.29-34
• /
• 2006

The effects of $B_2O_3$ addition on the low-temperature sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the amount of $B_2O_3$ and sintering temperature. Temperature coefficient of resonance frequency($T_f$) changes to a positive value with increasing the amount of $B_2O_3$ due to the increased amount of rutile phase which is one of the reaction products between $(Zn_{0.8}Mg_{0.2})TiO_3$ and $B_2O_3$. For $6.19 moi.{\%}B_2O_3$-added $(Zn_{0.8}Mg_{0.2})TiO_3$ system, it exhibits ${\epsilon}_r$ = 23.5, $Q{\times}f_o$ = 53,000 GHz, and $T_f$ = 0 ppm/$^{\circ}C$ when sintered at $900^{\circ}C$ for 5 h.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.1
• /
• pp.31-38
• /
• 2002

In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.