• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.124-128
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• 1997

An attempt was made to understand the dissolution and reprecipitation behavior of the constituent phases such as TiC, TiN, and Ti(CN) in TiC-TiN-Ni system. During the liquid-phase sintering the TiC phase was found to dissolve preferentially in Ni binder. The solid-solution phase, Ti(CN), formed around the TiN phase, resulting in a core/rim structure. This result was reproduced when large TiC particles were used with fine TiN particles. The path for the microstructural change in TiC-TiN-Ni system was largely controlled by the difference in the interfacial energy of each phase with the liquid binder phase. The results were discussed with thermodynamic principles.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Journal of the Korean Mathematical Society
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• v.61 no.1
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• pp.29-40
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• 2024

Let S and R be rings and _SC_R a semidualizing bimodule. We introduce the notion of G_C-FP_n-injective modules, which generalizes G_C-FP-injective modules and G_C-weak injective modules. The homological properties and the stability of G_C-FP_n-injective modules are investigated. When S is a left n-coherent ring, several nice properties and new Foxby equivalences relative to G_C-FP_n-injective modules are given.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.5
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• pp.499-506
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• 2005

This study was performed to investigate the effects of influent C/N ratio on the removal of organic and nitrogenous compounds by two nonwoven fabric filter bioreactors. The reactors were alternately aerated at an aeration/nonaeration period ratio of 60 min/60 min, and fed with wastewater only during nonaeration period. The influent C/N ratio (COD/TKN) was gradually reduced from 10 to 2. The influent was prepared by diluting the leachate from a foodwaste treatment facility in I city so that the COD concentration could be about 2,500 mg/L. The C/N ratio of the wastewater was adjusted by adding ammonium chloride. The results of the experiment showed that the COD and BOD concentration of the effluent was $40{\sim}54\;mg/L$ and $1{\sim}4\;mg/L$, respectively at the C/N ratios of $10{\sim}3$, and the effluent SS concentration was always below 2.0 mg/L. The T-N removal efficiencies were 96% or higher at C/N ratios of $10{\sim}5$, but decreased to 83% and 81%, respectively at the C/N ratios of 3 and 2.8. At the C/N ratios of 2.6 and 2, the effluent quality deteriorated due to ammonia toxicity. The fraction of nitrifying microorganism in the reactors increased from 10% to 20% as the C/N ratio decreased from 5 to 2.6. Alkalinity consumed were $3.12{\sim}3.49\;g$ alkalinity/g T-N removed at the C/N ratios of $10{\sim}5$, which are lower than the theoretical value of 3.57. However, the ratio increased to 4.63 and 4.87 g alkalinity/g T-N removed, respectively at the C/N ratios of 3 and 2.8.

• Journal of the Korean Ceramic Society
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• v.19 no.2
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• pp.121-126
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• 1982

This paper deals with the $Si_3N_4$-bonded SiC refractory in terms of its microstructure development during nitridation. When mixture of SiC grains and fine Si power is fired under nitrogen atmosphere, an interlocking network of $Si_3N_4$ whiskers is formed by nitridation of Si. It is found that the strength of $Si_3N_4$-bonded SiC refractory is soley due to the physical nature of this interlocking whiskers. At the initial stage of nitridation, $Si_3N_4$ whisker forms in very thin and long shape and, with further nitridation, it becomes thicker with diameters up to 0.35$\mu\textrm{m}$. It is found that the mechanical strength of $Si_3N_4$-bonded SiC refractory depends on the degree of nitridation and the development of microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• Korean Journal of Mathematics
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• v.18 no.2
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• pp.195-200
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• 2010

Let C be a closed convex set in ${\mathbb{S}}^m$ or ${\mathbb{H}}^m$. Assume that ${\Sigma}$ is an n-dimensional compact minimal submanifold outside C such that ${\Sigma}$ is orthogonal to ${\partial}C$ along ${\partial}{\Sigma}{\cap}{\partial}C$ and ${\partial}{\Sigma}$ lies on a geodesic sphere centered at a fixed point $p{\in}{\partial}{\Sigma}{\cap}{\partial}C$ and that r is the distance in ${\mathbb{S}}^m$ or ${\mathbb{H}}^m$ from p. We make use of a modified volume $M_p({\Sigma})$ of ${\Sigma}$ and obtain a sharp relative isoperimetric inequality $$\frac{1}{2}n^n{\omega}_nM_p({\Sigma})^{n-1}{\leq}Vol({\partial}{\Sigma}{\sim}{\partial}C)^n$$, where ${\omega}_n$ is the volume of a unit ball in ${\mathbb{R}}^n$ Equality holds if and only if ${\Sigma}$ is a totally geodesic half ball centered at p.

• Journal of the Korean Society of Safety
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• v.27 no.3
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• pp.83-88
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• 2012

For the safe handling of n-tridecane, the lower flash points and AITs(auto-ignition temperatures) by ignition delay time were experimented. Also lower explosion limits by the lower flash points were calculated. The lower flash points of n-tridecane by using closed-cup tester were experimented $92^{\circ}C$ and $96^{\circ}C$. The lower flash points and fire point of n-tridecane by using open cup tester were experimented 100 oC and 103 oC, respectively. This study measured relationship between the AITs and the ignition delay times by using ASTM E659 apparatus for n-tridecane. The experimental AIT of n-tridecane was 223 oC. The calculated lower explosion limit by using measured lower flash point 92 oC for n-tridecane was 0.6 Vol.%.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.12
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• pp.1944-1949
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• 2001

Four SiC-Si$_3$N$_4$ceramic cutting tools with different composition have been fabricated by hot-pressing. Correlations among the annealing time, the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The fracture toughness and the grain size of both SiC and Si$_3$N$_4$in SiC-Si$_3$N$_4$composites increased with the annealing time. 1\`he hardness of SiC-Si$_3$N$_4$composites was relatively independent of the grain size and the sintered density. These ceramic cutting tools were tested under various cutting conditions and compared with the commercial Si$_3$N$_4$ceramic cutting tools. The experimental results were compared in terms of tool life and cutting force. The performance of SiC-Si$_3$N$_4$ceramic cutting tool shows the possibility to be a new ceramic tool.