• Communications of the Korean Mathematical Society
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• v.32 no.4
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• pp.805-810
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• 2017

Let $C_n$ be the cycle graph of order n on the vertices $v_0,v_1,{\ldots},v_n$ and $C^k_n$ be the k-th power of $C_n$. In this article we determine the hull-number of $C^k_n$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.163-164
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• 2009

dc unbalanced magnetron sputtering 방법으로 superhard quarternary Ti-B-C-N films을 합성하였다. XPS, XRD 분석 결과 Ti-B-C-N films은 solid-solution (Ti,C,N)$B_2$와 Ti(C,N) 결정이 amorphous BN에 분포된 나노 복합체를 형성하였다. 여기에서는 film내 N의 양에 따라 강도가 증가하다가 그 후 감소하는 경향을 보였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Fire Science and Engineering
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• v.25 no.6
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• pp.184-189
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• 2011

This study measured the AITs of n-butanol + n-decane system from ignition delay time (time lag) by using ASTM E659 apparatus. The AITs of n-butanol and n-decane which constituted binary system were $340^{\circ}C$ and $212^{\circ}C$, respectively. The experimental AITs of n-butanol + n-decane system were a good agreement with the calculated AITs by the proposed equations with a few A.A.D. (average absolute deviation).

• The Korean Journal of Physiology and Pharmacology
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• v.5 no.6
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• pp.495-501
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• 2001

We have cloned the mouse neurotensin/neuromedin N (NT/N) gene from the murine mast cell line Cl.MC/C57.1 for the first time. The murine NT/N cDNA clone consisted of 765 nucleotides and coded for 169 peptide residues with an N-terminal signal peptide, and the C-terminal region contained of one copy of neurotensin (NT) and one copy of neuromedin N (NN). Total of four Lys-Arg dibasic motifs were present; one each at the middle of the open reading frame, at the N-terminal of NN, at the C-terminal of NT, and between NN and NT. Amino acid sequence analysis of the mouse NT/N revealed 90% homology to that of the rat NT/N gene. NT/N is expressed in murine mast cell lines (Cl.MC/C57.1 and P815), but not in murine bone marrow-derived mast cells (BMMCs), murine macrophage cell line (RAW 264.7), nor in murine T cell line (EL-4). NT/N mRNA in C1.MC/C57.1 is highly inducible by IgE cross-linking, phorbol myristate acetate, neurotensin, and substance P. Following the treatment of demethylating agent, 5-azacytidine (5-azaC), the NT/N gene was induced in BMMCs in response to IgE cross-linking. 5-azaC-treated BMMCs did not express the NT/N gene without additional stimuli. These findings suggested that the regulation of NT/N gene expression was dependent on the effects of not only gene methylation but also enhancer and/or repressor proteins acting on the NT/N promoter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.222-222
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• 2013

GaN 기반 반도체는 넓은 bandgap을 가지고 있어 가시광부터 자외선까지 다양한 광전소자에 유용하게 사용된다. 광전소자중 발광다이오드의 경우 대부분 사파이어 기판위에 성장된다. 하지만 사파이어와 GaN의 격자 불일치 및 열팽창 계수의 차이로 인해 고품질의 GaN를 성장하기가 어렵다. 특히 열팽창 계수의 차이는 GaN 성장 공정이 고온에서 이루어지기 때문에 성장후 상온으로 온도가 떨어질 때 웨이퍼의 bowing을 발생시키고 동시에 dislocation이나 crack과 같은 결함이 생성되 GaN 성장막의 품질을 떨어트린다. 웨이퍼의 크기가 커지면 커질수록 웨이퍼 bowing은 커져 이에 대한 연구는 중요하다. 본 논문에서 2인치 사파이어 기판위에 성장된 GaN의 bow특성을 알아보기 위해 먼저 simulation을 하였고 실제로 성장된 GaN 웨이퍼와 비교를 하였다. c-plane 사파이어 기판위에 성장된 c-plane GaN의 bow특성을 알아보기 위해 성장 온도 $1,100^{\circ}C$에서 GaN두께를 1 ${\mu}m$에서 10 ${\mu}m$까지 1 ${\mu}m$씩 변화시켜 가며 simulation을 하였다. GaN두께가 1 ${\mu}m$일때는 bow가 11 ${\mu}m$, 6 ${\mu}m$ 일때는 54.7 ${\mu}m$, 10 ${\mu}m$ 일때는 108 ${\mu}m$를 얻어 GaN두께가 1 ${\mu}m$씩 증가할 때 마다 bow가 약 10 ${\mu}m$씩 증가하였다. 성장온도에 대한 영향을 알아보기 위해 $700^{\circ}C$에서 $1,200^{\circ}C$까지 $100^{\circ}C$씩 증가시켜며 bow특성 simulation을 하였다. 6 ${\mu}m$성장된 GaN의 경우 성장온도가 $100^{\circ}C$ 씩 증가할 때 bow는 약 6 ${\mu}m$ 증가하였다. 실제 성장된 c-plane GaN웨이퍼와 비교하기 위해 GaN을 각각 3 ${\mu}m$와 6 ${\mu}m$를 성장시켰고 high resolution x-ray diffraction장비를 사용하여 bow를 측정한 결과 각각 28 ${\mu}m$와 61 ${\mu}m$ 였고 simulation결과는 각각 33 ${\mu}m$와 65.5 ${\mu}m$를 얻어 비슷한 결과를 보였다. c-plane 사파이어 기판위에 성장된 c-plane GaN는 방향에 무관하게 동일한 bow 특성을 가지는 반해 r-plane 사파이어 기판위에 성장된 a-plane GaN는 방향에 따라 다른 bow특성을 보인다. a-plane GaN 이방향성적인 bow 특성을 알아보기 위해 simulation을 하였다. $1,100^{\circ}C$에서 a-plane GaN을 성장할 때 두께가 1 ${\mu}m$ 증가할 때마다 bow가 c축 방향으로는 21.7 ${\mu}m$씩 증가하였고 m축 방향으로는 11.8 ${\mu}m$ 씩 증가하여 매우 큰 이방향성적인 bow 특성을 보였다. 실제 r-plane 사파이어 기판위에 성장된 a-plane GaN의 bow를 측정하였고 simulation 결과와 비교해 보았다.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.965-970
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• 1990

A nitrogenation of coal ash in the presence of carbon was carried out to examine the effects of reaction temperature, reaction time and carbon composition on the formation of AlN, SiC and Si3N4. Decreasing the particle size increased the formation of AlN and its maximum composition in the product was obtaiend under 1450~150$0^{\circ}C$, 2 hours of reaction time and about 30% of carbon addition(on the basis of sample weight). Compositions of SiC and Si3N4 were distributed to the opposite so that SiC showed a higher composition compared with Si3N4 at a lower temperature, a shorter reaction time and a greater carbon addition.

• Journal of The Korean Society of Grassland and Forage Science
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• v.17 no.3
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• pp.249-256
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• 1997

A pulse-chase labeling of $^{15}N$ on winter rye (Scale cereale) and forage rape (Brassica napus) grown at $15^{\circ}C$ and $25^{\circ}C$ was carried out to determine the effects of low temperature on the uptake exogenous N and the remobilization of endogenous N. The growth rate of leaves and roots depressed at $5^{\circ}C$. AAer 9 days at $5^{\circ}C$, nitrogen content of leaves decreased to 20% on the average while that of roots increased to 12% compared with the plants grown at $25^{\circ}C$. Total content of $NO_3$- uptake 60m medium was 23.0 and 43.5 mg Nlplant, respectively, for winter rye and forage rape grown at $5^{\circ}C$ during 9 days. These values were corresponded to 59.3 and 26.1% lower uptake than those of $25^{\circ}C$. A large part of 1 5 ~ was distributed into leaves throughout time course in both of two species. The content of $^{15}N$ in leaves of winter rye at day 6 increased to 166 and 296 $\mu^{15}$N/plant compared with the initial value (day 0) in the plants grown at $5^{\circ}C$and $25^{\circ}C$ , corresponding to 90 and 163 $\mu$g N of remobilization h m roots into leaves during the fist 6 days. From 7 to 9 days, 75 and 52 $\mu$gN of outflow 6om leaves were occurred at $5^{\circ}C$ and $25^{\circ}C$. However, little remobilization of endogenous N was estimated in forage rape throughout the entire time course regardless of temperature treatment. Comparing two species studied, winter rye was much sensitively influenced by low temperature on the uptake of exogenous N and the remobilization of endogenous N.