• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.55-63
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• 2001

Friction and wear properties of brake friction materials containing different metal fibers (Al, Cu or Steel fibers) were investigated using a pad-on-disk type friction tester. Two different materials(gray iron and Al-MMC)) were used for disks rubbing against the friction materials. Results from ambient temperature tests revealed that the friction material containing Cu fibers sliding against cast iron disk showed a distinct negative ${\mu}$-ν (friction coefficient vs. sliding velocity) relation implying possible stick-slip generation at low speed. The negative ${\mu}$-ν relation was not observed when the Cu-containing friction materials were rubbed against the. Al-MMC counter surface. As applied loads increased, friction materials showed higher friction coefficients comparatively. Friction materials slid against cast iron disks exhibited higher friction coefficients than Al-MMC disks during high temperature tests. On the other hand, high temperature test results suggested that copper fibers in the friction material improved fade resistance and the steel fibers were not compatible with Al-MMC disks showing severe material transfer and erratic friction behavior during sliding at elevated temperatures.

• Journal of Powder Materials
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• v.16 no.5
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• pp.326-335
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• 2009

Fe based (Fe$_{68.2}$C$_{5.9}$Si$_{3.5}$B$_{6.7}$P$_{9.6}$Cr$_{2.1}$Mo$_{2.0}$Al$_{2.0}$) amorphous powder, which is a composition of iron blast cast slag, were produced by a gas atomization process, and sequently mixed with ductile Cu powder by a mechanical ball milling process. The Fe-based amorphous powders and the Fe-Cu composite powders were compacted by a spark plasma sintering (SPS) process. Densification of the Fe amorphous-Cu composited powders by spark plasma sintering of was occurred through a plastic deformation of the each amorphous powder and Cu phase. The SPS samples milled by AGO-2 under 500 rpm had the best homogeneity of Cu phase and showed the smallest Cu pool size. Micro-Vickers hardness of the as-SPSed specimens was changed with the milling processes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.112-112
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• 2016

인체접촉시 니켈도금의 알러지 반응을 억제하기 위한 대체 도금기술인 비 시안계 Cu-Sn 합금도금을 개발함에 있어서, 황산구리5수화물과 황산제일주석을 금속염으로 하여 황산 및 계면활성제, 유화제 등을 포함한 각종 유기첨가제를 포함하였고 특히 은백색조의 외관 색상과 안정적인 Cu-Sn 합금전착을 위해 2종의 착화제인 EDTP($C_{14}H_{32}N_2O_4$)와 TEA(Triethanolamine)를 첨가한 비 시안계 Cu-Sn 합금 도금액을 도출하였다. Cu-Sn 합금도금 피막 조성의 균일화를 도모하기 위해서는 합금 도금액중의 Cu와 Sn 금속이온 농도를 일정하게 유지하는 것이 필요하다. 그러나 합금 도금액중 2가 주석이온($Sn^{2+}$)은 수용액중에서 4가 주석이온($Sn^{4+}$)으로 산화됨으로써 도금액 색상이 백탁이 되고 Stannic Hydroxide($Sn(OH)_4$, $SnO_2{\cdot}2H_2O$)이 생성되어 대량의 침전물이 침강하는 문제점이 발생되는 등 시간 경과에 따른 도금액의 경시 변화가 발생되었다. 상기 침전물은 연속여과에 의해 제거 가능하나 합금 도금액중 $Sn^{2+}$ 농도가 지속적으로 감소하게 된다. 이는 합금 도금액중 금속이온 비율이 변동함으로써 합금도금 피막의 조성비를 일정하게 유지하는 것이 곤란해진다. 이에 $Sn^{4+}$ 침전물 생성을 방지하기 위한 산화방지제를 개발하고 또한 산화방지제의 첨가에 따른 도금 피막 외관에 미치는 영향을 평가하여 외관 개선을 위한 광택제를 개발하고자 한다. 본 연구의 결과를 토대로 니켈도금과 동등 이상의 기능 특성을 갖는 비시안계 Cu-Sn 합금도금액을 개발하여 실용화하는 것을 목적으로 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.68.2-68.2
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• 2017

인체접촉시 니켈도금의 알러지 반응을 억제하기 위한 대체 도금기술인 비 시안계 Cu-Sn 합금도금을 개발함에 있어서, 황산구리5수화물과 황산제일주석을 금속염으로 하여 황산 및 계면활성제, 유화제 등을 포함한 각종 유기첨가제를 포함하였고 특히 은백색조의 외관 색상과 안정적인 Cu-Sn 합금전착을 위해 2종의 착화제인 EDTP (Ethylenediaminetetrapropanol, $C_{14}H_{32}N_2O_4$)와 TEA (Triethanolamine)를 첨가한 비 시안계 Cu-Sn 합금 도금액을 도출하였다. Cu-Sn 합금도금 피막 조성의 균일화를 도모하기 위해서는 합금 도금액중의 Cu와 Sn 금속이온 농도를 일정하게 유지하는 것이 필요하다. 그러나 합금 도금액 중 2가 주석이온($Sn^{2+}$)은 수용액 중에서 4가 주석이온($Sn^{4+}$)으로 산화됨으로써 도금액 색상이 백탁이 되고 Stannic Hydroxide($Sn(OH)_4$, $SnO_2{\cdot}2H_2O$)이 생성되어 대량의 침전물이 침강하는 문제점이 발생되는 등시간 경과에 따른 도금액의 경시 변화가 발생되었다. 상기 침전물은 연속여과에 의해 제거 가능하나 합금 도금액 중 $Sn^{2+}$ 농도가 지속적으로 감소하게 된다. 이는 합금 도금액 중 금속이온 비율이 변동함으로써 합금도금 피막의 조성비를 일정하게 유지하는 것이 곤란해진다. 이에 $Sn^{4+}$ 침전물 생성을 방지하기 위한 산화방지제를 개발하고 또한 산화방지제의 첨가에 따른 도금 피막 외관에 미치는 영향을 평가하여 외관 개선을 위한 광택제를 개발하고자 한다. 본 연구의 결과를 토대로 니켈도금과 동등 이상의 기능 특성을 갖는 비 시안계 Cu-Sn 합금도금액을 개발하여 실용화하는 것을 목적으로 하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.260-266
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• 2012

Syngas and hydrogen from the $CeO_2/ZrO_2$ coated foam devices were investigated under simulated solar radiation. The $CeO_2/ZrO_2$ coated SiC, Ni and Cu foam device were prepared using drop-coating method. Syngas production step was performed at $900^{\circ}C$, and hydrogen production process was performed for ten repeated cycles to compare the CeO2 conversion in syngas production step, $H_2$ yield in hydrogen production step and cycle reproducibility. The produced syngas had the $H_2$/CO ratio of 2, which was suitable for methanol synthesis or Fischer-Tropsch synthesis process. In addition, syngas and hydrogen production process is one of the promising chemical pathway for storage and transportation of solar heat by converting solar energy to chemical energy. After ten cycles of redox reaction, the $CeO_2/ZrO_2$ was analyzed using XRD pattern and SEM image in order to characterize the physical and chemical change of metal oxide at the high temperature.

• Journal of the Korean Society for Heat Treatment
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• v.1 no.1
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• pp.13-23
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• 1988

The hardenability of alloyed ductile cast irons was studied for 54 different alloy compositions obtained from eight commercial and laboratory foundries. The alloying elements investigated for their effects on hardenability were Si(2.0 to 3.0%), Mn(0.0 to 0.8%), Mo(0.0 to 0.6%), Cu(0.0 to 1.5%), and Ni(0.0 to 1.5%). Two hardenability criteria, a first-pearlite hardenability criterion and a half-hard hardenability criterion, were used to determine hardenability of ductile irons. Prediction models for each hardenability criterion were developed by multiple regression analysis and were well agreed with previous experimental results. Molybdenum was the most potent hardenability promoting element followed by manganese, copper and nickel ; silicon had little effect on hardenability and reduced the hardenability as silicon content increased. When alloying elements were presented in combination, strong synergistic effects on the hardenability were observed especially between molybdenum, copper and nickel. The hardenability of ductile iron was strongly influenced by austenitizing temperature. Increasing austenitizing temperature up to $955^{\circ}C$, hardenability increased gradually but decreasing rate and then decreased as temperature increased above $955^{\circ}C$. Unless reducing segregation by very long-time annealing treatment, the hardenability of ductile iron was not significantly influenced by segregation of alloying elements.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.344-348
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• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively