• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.223-227
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• 2009

The precipitates, hardness, and tensile properties of Al-6.2Si-2.9Cu AC2B alloy were investigated with respect to solution treatment time at $500^{\circ}C$. $Al(Cu)-Al_2Cu$ eutectic, Si, ${\theta}-(Al_2Cu)$, and $Q-(Al_5Cu_2Mg_8Si_6)$ phases were observed in the as-cast specimen. With increasing the solution treatment time at $500^{\circ}C$, the $Al(Cu)-Al_2Cu$ eutectic and ${\theta}-(Al_2Cu)$ phases were gradually reduced and finally almost disappeared in 5 h. The mechanical properties, such as hardness, tensile strength, and elongation, were improved with solution treatment time until about 5 h due to the dissolution of the $Al_2Cu$ particles. With further holding time, the mechanical properties did not change much. The solution treated specimens for over 5 h at $500^{\circ}C$ exhibit almost the same tensile properties even after aging at $250^{\circ}C$ for 3.5 h. Accordingly, the optimal solution treatment condition of the Al-Si-Cu AC2B alloy is considered to be 5 h at $500^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.04a
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• pp.37-37
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• 2001

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.342-349
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• 1993

The purpose of this study is to obtain basic information on the particle dispersion, the coefficient of thermal expansion and the thermal conductivity of compocasted Al-xSi-2Cu-1Mg/ySiC(x:6, 12, 18. $y:0{\sim}10wt.%$) composite. With increasing the content of SiC particles, the thermal expension coefficient and the thermal conductivity decrease. The coefficient of thermal expension between 20 and $300^{\circ}C$ is $21.3{\times}10^{-6}/^{\circ}C{\sim}18.0{\times}10^{-6}/^{\circ}C$ for the Al-Si alloys and $18.4{\times}10^{-6}/^{\circ}C{\sim}16.0{\times}10^{-6}/^{\circ}C$ for the composite with 10wt.% SiC. The thermal conductivity at $300^{\circ}C$ is $121{\sim}169W{\cdot}m^{-1}{\cdot}k^{-1}$ for the Al-Si alloys and $114{\sim}159W{\cdot}m^{-1}{\cdot}k^{-1}$ for the composite with 10wt.% SiC.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.121-121
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• 2000

반도체 산업의 발달에 따라 소자의 보다 빠른 동작 속도와 큰 집적도를 갖은 ULSI 구조를 얻기 위해, 새로운 금속배선 재료가 요구되고 있다. 기존의 금속 배선인 Al 및 Al 합금은 비교적 낮은 비저항과 박막형성의 용이함으로 인하여 현재까지 금속배선 재료로 사용되고 있으나, 고집적화에 따라 RC Time Delay와 Electromigration의 문제점을 들어내었다. 이러한 문제를 해결할 새로운 배선 재료로 Al보다 낮은 비저항을 가지며, electromigration 저항성을 갖는 Cu 금속배선 재료가 활발히 연구되고 있다. 본 실험에서는 (100) Si 웨이퍼를 기판으로 사용하였으며, 각층은 SiO2/Si3N4/EP Cu/Seed Cu/ TaN/SiO2/Si wafer 상태로 증착하였다. 확산방지막으로 TaN을 사용하였고, seed Cu는 sputtering 으로 증착하였으며, seed Cu 만으로 된 박막과 seed Cu + electro plating Cu로 구성된 박막을 제작하였다. 제작 완료된 박막은 N2 분위기에서 20$0^{\circ}C$ 120 min, 45$0^{\circ}C$ 60min 동안 열처리하여 Cu 박막의 조직 변화를 TEM 및 여러 분석방법을 이용하여 분석하였다. Plan-view TEM결과, 45$0^{\circ}C$, 60min 열처리함에 따라 결정립 성장이 일어난 것을 확인 할 수 있었다. 그러나, 성장후에도 twin boundary, stacking fault, dislocation, small defect 등은 여전히 남아 있음이 관찰된다. 그림 1(a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.140-145
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• 2005

The desulfurization abilities using GC/microreactor have been examined for $CuO-Fe_2O_3$ sorbents with respect to calcination temperatures of 700, 900 and $1,100^{\circ}C$. CuO was used as a main active component, $Fe_2O_3$ was used as an additive one and 25 wt% $SiO_2$ was used as a support. The desulfurization reaction temperature was $500^{\circ}C$ and the regeneration reaction temperature was $700^{\circ}C$. From the XRD results, the $CuFeO_2$ compound has been observed for the fresh sorbent calcined at $1,100^{\circ}C$ and the $CuFeS_2$ compound for the reacted sorbent calcined at $1,100^{\circ}C$. By the BET results, however any significant differences among sorbents calcined at the three different temperatures of 700, 900 and $1,100^{\circ}C$ haven't been observed. Especially CFS1 (CuO : $Fe_2O_3$ : $SiO_2$=67.5 wt% : 7.5 wt% : 25 wt%) sorbent calcined at $1,100^{\circ}C$ maintained about 10 g sulfur/100 g sorbent for 100 cycles by the cyclic test.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.111-118
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• 1998

본 연구에서는 차세대 집적회로 device의 배선재료로서 사용될 가능성이 높은 Cu 금속을 무전해 도금으로 증착시킨 후 집적회로 공정에 필요한 열적 안정성에 대하여 고찰하 였다. MOCVD방법으로 Si 기판위에 TaN 박막을 확산 방지막으로 증착시킨 다음 무전해도 금으로 Cu막을 증착시켜 Cu/TaN/Si 구조의 다층박막을 제조하여 H2 환원 분위기에서 열처 리시킴으로서 열처리 온도에 따른 Cu 박막의 특성과 확산방지막 TaN와의 계면반응 특성에 대하여 고찰하였다. 활성화 처리와 도금용액의 조절을 적절히 행함으로서 MOCVD TaN 박 막위에 적당한 접착력을 지닌 Cu 박막층을 무전해 도금법을 사용하여 성공적으로 증착시킬 수 있었다. XRD, SEM 분석결과에 의하면 H2 환원분위기에서 열처리시켰을겨우 35$0^{\circ}C$~ $600^{\circ}C$ 범위에서 결정립 성장이 일어나 Cu 박막의 미세구조 특성이 개선됨을 알수 있었다. 또한 XRD, AES 분석에 의하여 열처리 온도에 따른 계면반응 상태를 조사해본 결과 $650^{\circ}C$ 온도에서는 Cu 원자가 TaN 확산방지막을 통과하여 Si 기판내로 확산함으로서 계면에서 Cu-Si 중간화합물을 형성하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.548-551
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• 2002

The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.39-40
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• 1998

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.