• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• Journal of Surface Science and Engineering
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• v.44 no.5
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• pp.213-219
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• 2011

Recently aspheric lenses are widely used for superpricision optical instruments, such as cellular phone camera modules, digital cameras and optical communication modules. The aspherical lenses are processed using mold core under high temperature compressive forming pressure. It is imperative to develop superhard protective films for the life extension of lens forming mold core. Especially ta-C films with higher $sp^3$ fractions receive attentions for the life extension of lens forming mold and, in turn, the cost reduction of lenses due to their suprior high temperature stability, high hardness and smooth surfaces. In this study ta-C films were processed on WC mold as a function of substrate bias voltage using FVA (Filtered Vacuum Arc) method. The processed films were characterized by Raman spectroscopy and nano-indentation to investigate bonding nature and hardness, respectively. The film with maximun 87% of $sp^3$ fraction was obtained at the substrate bias voltage of -60 V, which was closest to ta-C film. ta-C films showed better high temperature stability by sustaining relatively high fraction of $sp^3$ bonding even after 2,000 glass lens forming applications.

• Food Science of Animal Resources
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• v.36 no.3
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• pp.377-388
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• 2016

Objective of the present study is to investigate the effect of coated edible films with chitosan solutions enriched with essential oil (EO) on the chemical, microbial and sensory properties of Kashar cheese during ripening time. Generally, no differences were found in total aerobic mesophilic bacteria, streptococci and lactoccocci counts among cheeses but these microorganism counts increased during 60 and 90 d storage especially in C1 (uncoated sample) as compared with coated samples. Antimicrobial effectiveness of the films against moulds was measured on 30, 60, and 90 d of storage. In addition of fish EO into chitosan edible films samples were showed to affect significantly decreased the moulds (p<0.05) as 1.15 Log CFU/g in C4 (with fish oil (1% w/v) fortified chitosan film) on the 90^th d, while in C1 as 3.89 Log CFU/g on the 90^th d of ripening. Compared to other cheese samples, C2 (coated with chitosan film) and C4 coated cheese samples revealed higher levels of water-soluble nitrogen and ripening index at the end of storage. C2 coated cheese samples were preferred more by the panellists while C4 coated cheese samples received the lowest scores.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.473-474
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• 2006

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of B2H6 with PH3 using APCVD. N2 was carried out as carrier gas. The optimal gas rates were $20\;m{\ell}/min$ for B2H6, $60\;m{\ell}/min$ for PH3 and $1\;{\ell}/min$ for N2. After as grown the films were insitu annealed for 1hour in N2 ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have B13P2 stoichiometry.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1915-1917
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• 2005

PZT(40/60) and PZT(60/40) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(40/60)/PZT(60/40) heterolayered thick films were fabricated by the screen-printing method on $Pt/Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a function of the applied pressure. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films which were coated five times was approximately $95-100{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1592-1594
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• 2003

This paper presents the deposition and characterization of microcrystalline silicon(${\mu}c$-Si:H) films by HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SC:SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}(T_f)$, 30 mTorr and $2{\sim}12%$(SC) for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.