• Title/Summary/Keyword: Bump foil

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The Effects of Levelers on Electroplating of Thin Copper Foil for FCCL (전기도금법을 이용한 FCCL용 구리박막 제조시 레벨러의 영향 연구)

  • Kang, In-Seok;Koo, Yeon-Soo;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.67-72
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    • 2012
  • In recent days, the wire width of IC is narrowed and the degree of integration of IC is increased to obtain the higher capacity of the devices in electronic industry. And then the surface quality of FCCL(Flexible Copper Clad Laminate) became increasingly important. Surface defects on FCCL are bump, scratch, dent and so on. In particular, bumps cause low reliability of the products. Even though there are bumps on the surface, if leveling characteristic of plating solution is good, it does not develop significant bump. In this study, the leveling characteristics of additives are investigated. The objective of study is to improve the leveling characteristic and reduce the surface step through additives and plating conditions. The additives in the electrodeposition bath are critical to obtain flat surface and free of defects. In order to form flat copper surface, accelerator, suppressor and leveler are added to the stock solution. The reason for the addition of leveler is planarization surface and inhibition of the formation of micro-bump. Levelers (SO(Safranin O), MV(Methylene Violet), AB(Alcian Blue), JGB(Janus Green B), DB(Diazine Black) and PVP(Polyvinyl Pyrrolidone) are used in copper plating solution to enhance the morphology of electroplated copper. In this study, the nucleation and growth behavior of copper with variation of additives are studied. The leveling characteristics are analyzed on artificially fabricated Ni bumps.

Shear Strength and Aging Characteristics in Solder Bumps for High Reliability Optical Module (고신뢰성 광모듈을 위한 솔더 범프의 전단강도와 시효 특성)

  • 유정희
    • Journal of Welding and Joining
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    • v.21 no.2
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    • pp.97-101
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    • 2003
  • The change of microstructures in the base metal during transient liquid phase bonding process of directionally Ni base superalloy, GID-111 was investigated. Bonds were fabricated using a series of holding times(0~7.2ks) at three different temperatures. The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of samples was evaluated. A TiW/Cu/electroplated Cu UBM structure was selected and the samples were aging treated to analyze the effect of intermetallic compounds with the time variations. An FIB technique was applied to the preparation of samples for TEM observations. An FIB technique is very useful to prepare TEM thin foil specimens from the solder joint interface. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the solder and the UBM was observed by using SEM, TEM and EDS. As a result, the shear strength was decreased of about 21% in the 100${\mu}{\textrm}{m}$ sample at 17$0^{\circ}C$ aging compared with the maximum shear strength of the sample with the same pad size. In the case of the 12$0^{\circ}C$ aging treatment, 18% of decrease in shear strength was measured at the 100${\mu}{\textrm}{m}$ pad size sample. An intermetallic compound of Cu6Sn5 and Cu3Sn were also observed through the TEM measurement by using.

Flip Chip Solder Joint Reliability of Sn-3.5Ag Solder Using Ultrasonic Bonding - Study of the interface between Si-wafer and Sn-3.5Ag solder (초음파를 이용한 Sn-3.5Ag 플립칩 접합부의 신뢰성 평가 - Si웨이퍼와 Sn-3.5Ag 솔더의 접합 계면 특성 연구)

  • Kim Jung-Mo;Kim Sook-Hwan;Jung Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.1 s.38
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    • pp.23-29
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    • 2006
  • Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

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