• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.238-239
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• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.495-499
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• 2010

To develop chemical and biosensors, this paper studies sensing characteristics of bulk carbon nanotube (CNT) electrodes by means of their electrical impedance properties due to their large surface area and excellence chemical absorptivity. The sensors were fabricated in the form of film and nano web style by using composite process for mass production. The bulk composite electrodes were fabricated with singlewall and multi-wall carbon nanotubes based on host polymers such as Nafion and PAN, using a solution-casting and an electrospinning technique. The resistance and the capacitance of electrodes were measured with LCR meter under the various amounts of buffer solution to study the electrical impedance change properties of them. On the experimental of sensor electrode, impedance characteristics of the composite electrode are affected by its host polymer and nanofiller and its sensing response showed saturated result after applying some amounts of buffer solution for test chemical. Especially, the capacitance values showed drastic changes while the resistance values only changed within few percent range. It is deduced that the ions in the solution penetrated and diffused into the electrodes surface changed the electrical properties of the electrodes much like a doping effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.40-43
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• 2017

Carbon coating approach is used to prepare carbon-doped $MgB_2$ bulk samples using low-cost naphthalene ($C_{10}H_8$) as a carbon source. The coating of carbon (C) on boron (B) powders was achieved by direct pyrolysis of naphthalene at $120^{\circ}C$ and then the C-coated B powders were mixed well with appropriate amount of Mg by solid state reaction method. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for $MgB_2$ doped with carbon. As compared to un-doped $MgB_2$, a systematic enhancement in $J_c(H)$ properties with increasing carbon doping level was observed for naphthalene-derived C-doped $MgB_2$ samples. The substantial enhancement in $J_c$ is most likely due to the incorporation of C into $MgB_2$ lattice and the reduction in crystallite size, as evidenced by the increase in the FWHM values for doped samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.95-101
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• 2009

Glass ceramics were made from coal bottom ash by adding CaO and $Li_2O$ as glass modifiers and $TiO_2$ as a nucleating agent in a process of melting and quenching followed by a thermal treatment. The surface of the glass ceramics has 1.6 times more $Li_2O$ compared to the inner matrix. When $TiO_2$ was not added or when only 2 wt% was added, the surface parts of the glass ceramics were crystalline with a thickness close to $130{\mu}m$. In addition, the matrixes showed only the glass phase and not the crystalline phase. However, doping of $TiO_2$ from 4 wt% to 10 wt% began to create small crystalline phases in the matrix with an increase in the quantity of the crystalline. The matrix microstructure of glass ceramics containing $TiO_2$ in excess of 8 wt% was a mixture of dark-gray crystalline and white crystalline parts. These two parts had no considerable difference in terms of composition. It was thought that the crystallization mechanism affects the crystal growth, direction and shape and rather than the existence of two types of crystals.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.172-172
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• 1999

Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.529-535
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• 1990

This paper describes the factors which control the impedance-relative humidity characteristics of the TiO2-V2O5 humidity sensor. To obtain the quantitative relationships between impedance and many manufacturing parameters such as V2O5mol%, the sintering time and temperature, various sets of samples are preared and tested. With changing relative hymidity from 20% to 80%, it is measrued that the corresponding capacitance and impedance from the semicircles which complex impedance plots make. As a result we found that the impedance-relative humidity characteristics are mainly controlled by the doping amount of V2O5 total pore volume and bulk resistence of the elements. We can assume the equivalent circuits of each samples and finally control the sintering time to get a linear humidity impedance response curve which plays an important role in device making. 4mol% V2O5-TiO2 specimen sintered at 90$0^{\circ}C$ for 10min. show liear log(Z) vs. RH characteristics and 10mol% V2O5-TiO2 specimen sintered at the same temp. for 20min. show linear (Z) vs. RH.