• Korean Journal of Materials Research
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• v.31 no.10
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• pp.539-545
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• 2021

The effect of Sm₂O₃ doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm₂O₃ results in better densification (from 5.70 to 5.82 g/cm³) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm₂O₃ increases. The doping of Sm₂O₃ remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm² in the leakage current density). Meanwhile, the doping of Sm₂O₃ reduces the donor concentration (the range of 2.73 × 10¹⁸ to 1.18 × 10¹⁸ cm^-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 10¹² to 4.08 × 10¹² cm^-2 with the increase of doping content of Sm₂O₃. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm₂O₃.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.50-50
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• 2009

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.17-22
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• 2006

Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.481.2-481.2
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• 2014

Bulk hetero junction (BHJ) polymer solar cell (PSCs) is one of the most promising fields as alternative energy source. Especially, the development of new p-type conjugated polymer is one of the main issues to get core technology. In this study, we investigated the chemical doping effects of incorporating 3,6-carbazole units into conjugated polymers based on 2,7-carbazole. We assessed the structural effects of this chemical doping by measuring the photovoltaic device performance of the copolymers with and without annealing. Note that the use of nanostructures in the bulk heterojunction layer could be a major obstacle to commercialization because nano-morphologies are frequently unstable at high temperatures. Therefore, the development of thermally stable polymer:fullerene blends with optimized PCEs is an important goal in this area of research. We studied the morphologies of the copolymers incorporating 3,6-carbazole units resulting from thermal annealing to investigate the effects of the difference between the T g values of the 2,7-carbazole unit and the 3,6-carbazole unit.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• Current Photovoltaic Research
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• v.12 no.2
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.346-350
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• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.384-388
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• 2013

Fluorine-doping on the $Li_{1+x}Mn_{1.9-x}Al_{0.1}O_4$ spinel cathode materials is found to alter crystal shape, and enhance initial interfacial reactivity and solid electrolyte interphase (SEI) formation, leading to improved initial coulombic efficiency in the voltage region of 3.3-4.3 V vs. Li/$Li^+$ in the room temperature electrolyte of 1 M $LiPF_6$/EC:EMC. SEM imaging reveals that the facetting on higher surface energy plane of (101) is additionally developed at the edges of an octahedron that is predominantly grown with the most thermodynamically stable (111) plane, which enhances interfacial reactivity. Fluorine-doping also increases the amount of interfacially reactive $Mn^{3+}$ on both bulk and surface for charge neutrality. Enhanced interfacial reactivity by fluorine-doping attributes instant formation of a stable SEI layer and improved initial cyclic efficiency. The data contribute to a basic understanding of the impacts of composition on material properties and cycling behavior of spinel-based cathode materials for lithium-ion batteries.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.313-317
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• 2005

The relation between bulk microdefect (BMD) and mechanical strength of $P/P^-$ epitaxial silicon wafers (Epitaxial wafer) as a function of nitrogen concentrations was studied. After 2 step anneal$(800^{\circ}C/4hrs+1000^{\circ}C/16hrs)$, BMD was not observed in nitrogen undoped epitaxial silicon wafer while BMD existed and increased up to $3.83\times10^5\;ea/cm^2$ by addition of $1.04\times10^{14}\;atoms/cm^3$ nitrogen doping. The slip occurred for nitrogen undoped and low level nitrogen doped epitaxial wafers. However, there was no slip occurrence above $7.37\times10^{13}\;atoms/cm^3$ nitrogen doped epitaxial wafer. Mechanical strength was improved from 40 to 57 MPa as nitrogen concentrations were increased. Therefore, the nitrogen doping in silicon wafer plays an important role to improve BMD density, slip occurrence and mechanical strength of the epitaxial silicon wafers.