• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.534-534
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여 co-sputtering 방법으로 TiO2와 ZnO를 이용하여 인버티드 유기태양전지용 버퍼층을 제작하고 TiO2와 ZnO의 함량에 따른 인버티드 유기 태양전지 특성을 비교하였다. Ti-Zn-O 버퍼층은 기존의 버퍼층 제작에 사용되던 용액 공정 대신 스퍼터링 시스템을 이용하여 제작하였다. ITO 전극 상부에 곧바로 Ti-Zn-O를 성막하여 Anode와 버퍼층이 일체화된 투명 전극을 제작하고 ZnO와 TiO2 함량이 유기 태양전지의 특성에 미치는 영향을 연구하였다. 버퍼층의 TiO2와 ZnO 함량에 따른 광학적, 구조적특성을 UV/Vis spectrometry와 X-ray diffraction (XRD), TEM 등으로 분석하였으며, Ti-Zn-O 박막의 실제 버퍼 층으로서의 적용 가능성을 알아보기 위해 인버티드 유기태양전지로 제작하여 그 특성을 평가하였다. 기존의 인버티드 유기태양전지의 특성이 fill factor of 55.58%, short circuit current of 8.33 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.06%인데 반해 최적 조건의 Ti-Zn-O 버퍼층을 적용했을 경우 fill factor of 52.05%, short circuit current of 8.81 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.03%인 우수한 유기태양전지의 특성을 보임으로써 스퍼터링 공법으로 제작된 Ti-Zn-O 박막의 인버티드 유기태양전지용 버퍼 층으로서의 적용 가능성을 확인하였다.

• 한국실내디자인학회논문집
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• 제14권5호
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• pp.52-61
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• 2005

Ecological traces appearing in contemporary architecture are based on modern architecture and most aspects on the contemporary architecture are related with the successive trend or break of the modern architecture. The concept of environment in the modern age has established clear destination, as it has been considered as nature. The architecture under a mechanical world view in the modem age has sustained the opposing connection with nature as environment. However, there have been architects maintaining the sympathy with nature in that vortex. This trend has been regarded as same context as ecological architecture and estimated to the outpost of ecological characteristics appearing in the contemporary architecture. This study is to make it clear that the ecological manifestation in the contemporary architecture is based on the ecology in the modem architecture through considering ecological ideals of architects in the modern architecture and considering space composition and structural properties in the modern architecture of ecological paradigm. The scope of this study contains spacial analysis, design strategy, and design types of organic architecture in nature, which has appeared from the modern age. First, the division into period is carried out according to the organic tendency of non-mainstream in the modern architecture: Arts and Crafts Movement, Art Nouveau, Sezession, Expressionism, Organic Architecture, Regionalism, Internationalism. Therefore, this study is significant to be on the search for a start to suggest ecological point of view to architectural space in modern architecture and is search organic characteristics for ecological characteristics in modern architecture; organic relation, thermal buffer space, regionalism, multi-layer, energy efficiency.

• Geomechanics and Engineering
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• 제10권1호
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• pp.49-57
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• 2016

The high permeability-high strength concrete belongs to the typical of porous materials. It is mainly used in underground engineering for cold area, it can act the role of heat preservation, also to be the bailing and buffer layer. In order to establish a suitable model to predict the thermal conductivity and directly applied for engineering, according to the structure characteristics, the thermal conductivity predicting model was built by resistance network model of parallel three-phase medium. For the selected geometric and physical cell model, the thermal conductivity forecast model can be set up with aggregate particle size and mixture ratio directly. Comparing with the experimental data and classic model, the prediction model could reflect the mixture ratio intuitively. When the experimental and calculating data are contrasted, the value of experiment is slightly higher than predicting, and the average relative error is about 6.6%. If the material can be used in underground engineering instead by the commonly insulation material, it can achieve the basic requirements to be the heat insulation material as well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.73-74
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• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.95-98
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• 1999

The crystalline alignment of Ni substrates textured by RABiTS have a probability distribution in the surface plane. This makes it difficult to obtain a high quality of textures over all the range of a long Ni tape. In order to improve the textures of Ni tape, we have investigated a new method of texturing. We obtained non-cube textured Ni tapes by rolling and annealing a high purity Ni. In these tapes, the [001]-axes were tilted around the rolling direction, and the [100]-axes were parallel to the rolling direction. The average grain size was several cm$^2$. We deposited buffer layer (CeO$^2$/YSZ/CeO$^2$) and YBCO on those tapes. We found out that a YBCO film with grows normal with respect to the surface and this feature is independent of the tilting angles of the Ni [001]-axes.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• 한국진공학회지
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• 제9권2호
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• pp.116-121
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• 2000

Molecular beam epitaxy(MBE)로 성장시킨 $Al_{0.24}Ga$$_{0.76}As/GaAs$ 에피층 구조의 표면 광전압을 측정하였다. 측정된 신호로부터 구한 $Al_{0.24}Ga$$_{0.76} As/GaAs$ 에피층, GaAs 기판 그리고 GaAs 완충층의 밴드갭 에너지는 각각 1.72, 1.40 그리고 1.42 eV이다. 이는 phoareflectance(PR) 측정 결과와 잘 일치하였다 그리고 $Al_{0.24}Ga $_{0.76} As/GaAs$ 에피층이 GaAs기판의 표면 광전압세기 보다 약 3배 정도 작게 나타났는데 이는 캐리어의 이동도 차이로 나타나는 현상으로 해석된다. 또한 표면 광전압의 온도 의존성으로부터 Varshni 식의 계수들을 구하였다.

• 한국세라믹학회지
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• 제31권12호
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• pp.1521-1528
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• 1994

To improve mechanical strength of bioglass, it is considered to use the glass as a coating material to alumina, but the difference in thermal expansion coefficient between two materials is too high to make a good coating. The aim of the present study, therefore, is to find out proper glass composition matching its thermal expansion coefficient to that of alumina without losing biocompatibility. In the present work, various glasses were prepared by substituting B2O3 and CaO for Na2O in the glass system of 55.1%SiO2-2.6%P2O5-20.1%Na2O-13.3%CaO-8.9%CaF2 (in mole%), and the thermal expansion property and reaction property in tris-buffer solution for the resulting glasses were measured. The thermal expansion coefficient of the glass was decreased with the substitution of B2O3 for Na2O, and it became close to that of alumina in the glass in which 8 mole% of CaO was substituted for Na2O. Hydroxyapatite formation was enhanced and silica rich layer thickness was decreased with B2O3 substitution for Na2O. CaO substitution for Na2O didn't deteriorated the hydroxyapatite development.