• Journal of the Korean Institute of Landscape Architecture
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• v.43 no.4
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• pp.62-74
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• 2015

This study was carried out to provide examples of planting methods for the construction of street green spaces with abundant greenery by analyzing road type, surrounding land use and planting structures in street green spaces on Port Island, Kobe, Japan. Port Island_(total area: 826ha) is a marine cultural city located in Japan's first artificial island with facilities of urban function and port facilities. The study site was designated at 11 plots of $55{\sim}285m^2$ on Port Island, and topography structure styles were divided into four types with mounding style, slope style, slope and flat style, flat style according to the adjacent roads width. The area adjacent to the middle roads with high levels of noise and pollution set up the mounding style, slope style, slope and flat style of multi-layer structures using topographic properties. The area adjacent to small roads focused on a green strip with shrubs on a flat style. Surrounding land-uses include a public institution, housing complex, and a commercial building. The planting concept was a buffer and landspace function in case of the middle road_(lane 4) while the small road_(lane 2) was a landspace function. Planting species were diverse with Liquidambe formosana, Cinnamomum camphora, Sapium sebiferum, Cedrela sinensis, Laeocarpus sylvestris var. ellipticus, Ginkgo biloba, Prunus serrulata var. spontanea, Zelkova serrata, Quercus glauca, Juniperus chinensis, Magnolia kobus, Rhododendron spp., Camellia japonica, Abelia mosanensis, etc. Planting density was 0.02~0.08(0.04) individual/$m^2$ at the canopy layer, 0.02~0.08(0.04) individual/$m^2$ at the understory layer. Ratio of green coverage was 40.0~173.7(93.0)% at the canopy layer, 2.1~79.8(34.9)% at the understory layer and 17.9~64.2(32.9)% at the shrub layer. $Gr{\ddot{u}}volumenzahl$ was $1.43{\sim}6.67(4.13)m^3/m^2$ at the canopy layer, $0.02{\sim}2.01(0.85)m^3/m^2$ at the understory layer and $0.14{\sim}0.58(0.26)m^3/m^2$ at the shrub layer. The ratio of green coverage of street green space on Port Island was higher than that of Seoul, and particularly, the ratio of green coverage and $gr{\ddot{u}}volumenzahl$ at the shrub layer differed, compared to the main street green space in Korea. The result of this study may be applicable to other coastal reclaimed cities in terms of setting methods for street greenery considering the topography structure, planting structure and planting function.

• Journal of Communications and Networks
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• v.6 no.4
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• pp.376-386
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• 2004

In ad hoc networks, loss-based congestion window progression by the traditional means of duplicate ACKs and timeouts causes high network buffer utilization due to large bursts of data, thereby degrading network bandwidth utilization. Moreover, network-oriented feedbacks to handle route disconnection events may impair packet forwarding capability by adding to MAC layer congestion and also dissipate considerable network resources at reluctant intermediate nodes. Here, we propose a new TCP scheme that does not require the participation of intermediate nodes. It is a purely end-to-end scheme using TCP timestamps to deduce link conditions. It also eliminates spurious reductions of the transmission window in cases of timeouts and fast retransmits. The scheme incorporates a receiver-oriented rate controller (rater), and a congestion window delimiter for the 802.11 MAC protocol. In addition, the transient nature of medium availability due to medium contention during the connection time is addressed by a freezing timer (freezer) at the receiver, which freezes the sender whenever heavy contention is perceived. Finally, the sender-end is modified to comply with the receiver-end enhancements, as an optional deployment. Simulation studies show that our modification of TCP for ad hoc networks offers outstanding performance in terms of goodput, as well as throughput.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.181.2-181.2
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• 2016

OLED 소자는 발광 방향에 따라 Bottom Emission 방식과 Top Emission 방식으로 나뉜다. 이 중 대면적 OLED TV 적용에 개구율이 더 높은 Top Emission방식을 선호하는 추세이다. 높은 개구율을 가진 Top Emission OLED소자를 위해서는 투명하고 전도성이 높은 캐소드가 중요하다. 본 연구에서는 Themal Evaporation 시스템을 이용하여 증착한 $SnO_2/Ag-Pd-Cu(APC)/SnO_2$ hybrid 전극의 특성을 연구하고 Oxide/Metal/Oxide(OMO) hybrid 박막의 bending mechanism을 제시하였다. base pressure는 $1{\times}10^{-6}Torr$로 고정하고 $SnO_2$ 박막은 0.34A / 0.32V, APC 박막은 0.46A / 0.40V의 power로 성막하였다. APC와 $SnO_2$의 두께를 변수로 OMO 전극을 제작하였고 그 전기적, 광학적 특성을 Hall measurement, UV/Visible spectroscopy을 이용하여 분석하고 Figure of merit 값을 바탕으로 최적 두께를 설정하였다. UPS(Ultraviolet Photoelectron Spectroscopy) 분석으로 $SnO_2/APC/SnO_2$ 전극의 일함수을 통해 투명 cathode로 쓰였을 때 $SnO_2$ 층이 buffer layer역할을 함을 확인하였다. XPS(X-ray photoelectron spectroscopy)를 이용하여 정성분석과 정량분석을 하였고 OMO hybrid 전극의 bending mechanism 연구를 위해 다양한 bending test (Inner/Outer dynamic fatigue test, twisting test, rolling test)를 진행하였다. 물리적 힘이 가해진 OMO hybrid 전극의 표면과 구조는 FE-SEM(Field Emission Scanning Electron Microscope) 분석을 통해서 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.465-466
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• 2009

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. $TiO_2$ thin films were deposited on the ITO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD). We manufactured DSC unit cells then I-V and efficiency were tested by solar simulator.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.3 no.4
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• pp.399-422
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• 2009

Although current wireless mesh network (WMN) applications experience a perceptually uninterrupted hand-off, their throughput after the hand-off event may be significantly degraded due to the low available bandwidth of the mobile client's new master. In this paper, we propose a novel mobility management scheme for 802.11-based WMNs that enables both seamless hand-off for transparent communications, and bandwidth awareness for stable application performance after the hand-off process. To facilitate this, we (i) present a new buffer moment in support of the fast Layer-2 hand-off mechanism to cut the packet loss incurred in the hand-off process to zero and (ii) design a dynamic admission control to grant joining accepts to mesh clients. We evaluate the benefits and drawbacks of the proposal for both UDP and TCP traffic, as well as the fairness of the proposal. Our results show that the new scheme can not only minimize hand-off latency, but also maintain the current application rates of roaming users by choosing an appropriate new master for joining.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.148-148
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• 2016

디스플레이 시장이 rigid에서 flexible로 변화하기 시작하면서 유연 투명전극 소재에 대한 수요가 증가하고 있다. 투명전극으로 대표되는 Indium Tin Oxide(ITO)는 고투과 저저항의 장점을 가지지만 유연성이 떨어져 이를 대체 할 투명전극 소재로 Metal mesh, Ag nano-wire, CNT, Graphene, Conductive polymer 등에 대한 응용 연구가 활발히 진행되고 있다. 본 연구에서는 Metal mesh 용 Cu thin film 형성을 위해 플라즈마 표면처리 기술로 플라스틱 기판과 Cu 박막 사이의 밀착력을 향상시키고자 공정 연구를 수행하였다. 고품질의 Cu thin film 제작을 위해 양산용 roll to roll 장비를 이용하였고, 선형이온소스를 적용하여 플라즈마 표면처리를 수행하였다. 이후 마그네트론 스퍼터링을 통해 Ni buffer layer 및 Cu 박막 증착 공정을 in-situ로 진행하였다. 이러한 공정을 통해 제작한 Cu thin film의 밀착력을 평가하기 위해 cross cut test(ASTM D3359)를 수행하였다. 그 결과 플라스틱 기판과 Cu 금속 박막 사이의 밀착력이 0B에서 5B까지 향상된 것을 확인하였고, 플라즈마 표면처리 공정을 통해서 저항 또한 감소되는 결과를 얻을 수 있었다. 본 연구를 통해 polyethylene terephthalate(PET)뿐만 아니라 polyimide(PI) 기판 상에서도 플라즈마 표면처리를 통해 금속 박막의 밀착력이 향상되는 결과를 확인하였으며, flexible copper clad laminate (FCCL) 같은 유연 정보 소자 분야에 응용 가능할 것으로 기대된다.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Journal of Pharmaceutical Investigation
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• v.41 no.4
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• pp.211-215
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• 2011

The aim of this study was to develop a stable enteric coated diclofenac sodium (DFS) tablets using Aqua-Polish E without using a subcoat. DFS uncoated tablets were manufactured through the non direct compression process. AquaPolish E white aqueous coating dispersion was used as enteric coating material. This film forming polymer is a mixture of selected polymethacrylic/ethylacrylate copolymers. The stability of the obtained enteric coated tablets was evaluated according to ICH guidelines. No signs of disintegration or cracking was observed when they placed in 0.1N HCl solution (pH1.2), but they were completely disintegrated within 10 minutes when they placed in buffered solution at pH6.8. Dissolution test was also conducted by placing tablets in 0.1 N HCl for 2 hours and then 1 hour in phosphate buffer at pH 6.8. Less than 0.9 % of drug was released in the acidic phase and up to 97% in the basic medium. These findings suggest that aqueous enteric coating with AquaPolish E system is an easy and economical approach for preparing stable DFS enteric coat without the use of a subcoating layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.