• Title/Summary/Keyword: Buffer-layer

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Study on deposition condition of epitaxial $Y_2O_3$ buffer layer deposited on textured metal substrates for $YBa_2Cu_3O_7$ coated conductors (YBCO Coated Conductor를 위한 texture된 금속 기판위의 epitaxial $Y_2O_3$ 완충층 증착 조건에 관한 연구)

  • Shin, K.C.;Ko, R.K.;Park, Y.M.;Chung, J.K.;Shi, Dongqi;Choi, S.J.;Song, K.J.;Park, C.;Son, Y.G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.565-568
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    • 2003
  • 2세대 초전도 선재로 알려져 있는 $YBa_2Cu_3O_{7-\delta}$ coated conductor는 금속모재/완충층/초전도층/보호층의 구조를 가진다. 2개 이상의 산화물 다층 박막으로 이루어진 완충층은 금속기판의 집합조직을 초전도층까지 전달하는 역할, 금속기판의 금속이 초전도층으로 확산되어 초전도층의 전기적 특성을 열화시키는 것을 막아주는 확산장벽으로의 역할 등을 수행한다. 1차 완충층은 금속기판의 집합조직을 유지하여야하며, 금속기판의 산화를 방지하면서 증착 되어야 한다. coated conductor 제조를 위한 첫 단계로 Pulsed Laser Deposition법을 이용하여 cube texture된 Ni 기판 위에 $Y_2O_3$ 박막을 증착 하였다. 최적의 증착 조건을 찾기 위해 증착 챔버의 산소 및 $H_2/Ar$ 혼합가스 분압과 기판온도를 변화시키면서 증착 하였다. $Y_2O_3$층의 (100) 집합조직은 기판온도 $600{\sim}700^{\circ}C$와 산소 분압 $0.01{\sim}0.1mTorr$에서 증착된 Y2O3 박막에서 금속기판과 유사한 집합조직을 얻을 수 있었다. 최적의 증착 조건에서 $Y_2O_3$ (222) ${\Phi}-scan$의 full width at half maximum (fwhm)이 $11^{\circ}$이고 (400) ${\omega}-scan$ fwhm은 $6^{\circ}$이었다.

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Evaluation of $SrRuO_3$ Buffer Layer for $Pb(Zr,Ti)O_3$ Ferroelectric Capacitor ($Pb(Zr,Ti)O_3$ 강유전체 커패시터에 적용하기 위한 $SrRuO_3$ 버퍼 층의 특성 평가)

  • Kweon, Soon-Yong;Choi, Ji-Hye;Son, Young-Jin;Hong, Suk-Kyoung;Ryu, Sung-Lim
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.280-280
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    • 2007
  • $Pb(Zr,Ti)O_3$ (PZT) 강유전체 박막은 높은 잔류 분극 (remanent polarization) 특성 때문에 현재 강유전체 메모리 (FeRAM) 소자에 적용하기 위하여 가장 활발히 연구되고 있다. 그런데 PZT 물질은 피로 (fatigue) 및 임프린트 (imprint) 등의 장시간 신뢰성 (long-term reliability) 특성이 취약한 단점을 가지고 있다. 이러한 신뢰성 문제를 해결할 수 있는 효과적인 방법 중의 하나는 $IrO_2$, $SrRuO_3$(SRO) 등의 산화물 전극을 사용하는 것이다. 많은 산화물 전극 중에서 SRO는 PZT와 비슷한 pseudo-perovskite 결정구조를 갖고 격자 상수도 비슷하여, PZT 커패시터의 강유전 특성 및 신뢰성을 향상시키는데 매우 효과적인 것으로 알려져 있다. 따라서 본 연구는 PZT 커패시터에 적용하기 위하여 SRO 박막을 증착하고 이의 전기적 특성 및 미세구조를 분석하고자 하였다. 또 실제로 SRO 박막을 상부전극과 PZT 사이의 버퍼 층 (buffer layer)으로 적용한 경우의 커패시터 특성도 평가하였다. 먼저 다결정 SRO 박막을 $SiO_2$/Si 기판 위에 DC 마그네트론 스퍼터링 법 (DC magnetron sputtering method)으로 증착하였다. 그 다음 이러한 SRO 박막의 미세구조, 결정성 및 전기적 특성이 증착 조건들의 변화에 따라서 어떤 경향성을 보이는지를 평가하였다. 기판 온도는 $350\;{\sim}\;650^{\circ}C$ 범위에서 변화시켰고, 증착 파워는 500 ~ 800 W 범위에서 변화시켰다. 또 Ar+$O_2$ 혼합 가스에서 산소의 혼합 비율을 20 ~ 50% 범위에서 변화시켰다. 이러한 실험 결과 SRO 박막의 전기적 특성 및 미세 구조는 기판의 증착 온도에 따라서 가장 민감하게 변함을 관찰할 수 있었다. 다른 증착 조건과 무관하게 $450^{\circ}C$ 이상의 온도에서 증착된 SRO 박막은 모두 주상정 구조 (columnar structure)를 형성하며 (110) 방향성을 강하게 나타내었다. 가장 낮은 전기 저항은 $550^{\circ}C$ 증착 온도에서 얻을 수 있었는데, 그 값은 약 $440\;{\mu}{\Omega}{\cdot}cm$ 이었다. SRO 버퍼 충을 적용하여 제작한 PZT 커패시터의 잔류 분극 (Pr) 값은 약 $30\;{\mu}C/cm^2$ 정도로 매우 높은 값을 나타내었고, 피로 손실 (fatigue loss)도 $1{\times}10^{11}$ 스위칭 사이클 후에 약 11% 정도로 매우 양호한 값을 나타내었다.

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Influence of the DC Power on the Electrical and Optical Properties of ITO Thin Films Deposited on Nb2O5/SiO2 Buffer Layer (Nb2O5/SiO2 버퍼층위에 증착한 ITO 박막의 전기적 및 광학적 특성에 DC 파워가 미치는 영향)

  • Joung, Yang-Hee;Kang, Seong-Jun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.2
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    • pp.297-302
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    • 2019
  • In this study, we deposited ITO thin films on buffer layer of $Nb_2O_5(8nm)/SiO_2(45nm)$ using DC magnetron sputtering method and investigated its electrical and optical properties with various DC powers(100~400 W). The surface of the ITO thin film was observed by AFM. All thin films had defected free surface such as pinholes and cracks. The thin film deposited at DC power of 200 W exhibited the smallest surface roughness of 1.431nm. As a result of electrical and optical measurements, the ITO thin film deposited at DC power of 200 W which showed the lowest resistivity of $3.03{\times}10^{-4}{\Omega}-cm$. The average transmittance in the visible light region(400 to 800 nm) and the transmittance at the wavelength of 550nm were found to be 85.8% and 87.1%, respectively. The chromaticity(b*) was also a relatively good value as 2.13. The figure of merit obtained from the sheet resistance of the ITO thin film, the average transmittance in the visible light region and the transmittance at the wavelength of 550nm were the best values of $2.50{\times}10^{-3}{\Omega}^{-1}$ and $2.90{\times}10^{-3}{\Omega}^{-1}$ at a DC power of 200W, respectively.

A Cross-Layer based Video Transmission Scheme using Efficient Bandwidth Estimation in IEEE 802.11e EDCA (IEEE 802.11e EDCA에서 효율적인 대역폭 측정을 통한 Cross-Layer 기반의 비디오 전송 기법)

  • Shin, Pil-Gyu;Lee, Sun-Hun;Chung, Kwang-Sue
    • Journal of KIISE:Information Networking
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    • v.35 no.3
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    • pp.173-182
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    • 2008
  • Promoting quality of streaming service in wireless networks has attracted intensive research over the years. Instable wireless channel condition causes high transmission delay and packet loss, due to fading and interference. Therefore, they lead to degrade quality of video streaming service. The IEEE 802.11 Working Group is currently working on a new standard called IEEE 802.11e to support quality of service in WLANs. And several schemes were proposed in order to guarantee QoS. However, they are not adaptable to network condition. Accordingly, they suffered video quality degradation, due to buffer overflow or packet loss. In this paper, to promote quality of video streaming service in WLANs, we propose a cross-layer architecture based on IEEE 802.11e EDCA model. Our cross-layer architecture provides differentiated transmission mechanism of IEEE 802.11e EDCA based on priority of MPEG-4 video frames and adaptively controls the transmission rate by dropping video frames through the efficient bandwidth estimation based on distinction of each AC. Through the simulation, proposed scheme is shown to be able to improve end-to-end qualify for video streaming service in WLANs.

Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate (HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성)

  • Hong, S.H.;Jeon, H.S.;Han, Y.H.;Kim, E.J.;Lee, A.R.;Kim, K.H.;Hwang, S.L.;Ha, H.;Ahn, H.S.;Yang, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.1
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    • pp.6-10
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    • 2009
  • In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

Multi-Buffer Zone Analysis of Geo-Based Integrated Thematic Mappable Information by Using GIS (GIS를 이용한 지질자료 기반 통합 주제정보의 다중 버퍼 영역분석)

  • 이기원;박노욱;권병두
    • Spatial Information Research
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    • v.7 no.2
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    • pp.159-173
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    • 1999
  • GIS has been regarded as one of important tools or methodologies for various geoscience applications. Recently, spatial data integration schemes for site-specific or field-specific thematic mapping are newly developed and utilized. However, these kinds of approaches are somewhat insufficient quantitative assessment of integrated layers towards known targets in-detailed . Moreover, GIS analysis scheme is rarely extended to scientific approaches. In this study, simple approach of Multi-Buffer Zone Analysis , related to GIS analystical aspect, is addressed and an actual application for predicting or favorable mapping of mineral occurrences, one of GIS-based geoscientific approaches, is performed, As for geo-processing in GIS itself, this scheme can be regarded as extension or adaptiation of cell-based buffering or proximity analysis to geoscientific data interpretation. This study is based on rationale that surface geological pattern around primitives such as a point, a line, or a polygon in GIS, representing significant geological features, can be efficiently utilized to delineate complex geological behaviors or events, especially handling multiple dta sets originated from multiple sources such as airborne geophysical/radiometric exploration, field survey, and even a classified image of remote sensing. Conclusively, this methodology associated wit GIS is though to be helpful to analyze the spatial pattern of multiple data, pointing given sources, and is expected to effectively utilize for exploratory analysis of cell-based resultant layer integrated with complex or different data sources.

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Fine Structure on the Pigment Epithelial Cell and the Bruch's Membrane of the Rat Retina after X-Irradiation (X-선 조사를 받은 흰쥐 망막의 색소상피세포와 기저복합층의 미세구조)

  • Ko, Jeong-Sik;Shin, Ki-Ho;Ahn, E.Tay;Yang, Nam-Gil;Park, Kyung-Ho;Kim, Jin-Gook
    • Applied Microscopy
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    • v.23 no.2
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    • pp.11-26
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    • 1993
  • This experiment was performed to study the morphological responses of the pigment epithelial cell and the Bruch's membrane of the retina of rat following X-ray irradiation. Male rats were divided into normal and experimental groups. The heads of the rats, under sodium thiopental anesthesia, were exposed to 3,000 rads or 6,000 rads of radiation in a single dose, respectively. The source was a Mitsubishi Linear Accelerator ML-4MV. The target to skin distance was 80cm, and the. dose rate was 200 rads/min. The experimental groups were sacrificed on the 6th hour, 2nd and 6th day after X-ray irradiation. Under anesthesia, 1% glutaraldehyde-1% paraformaldehyde solution(0.1M Millonig's phosphate buffer, pH 7.3) was perfused through the left ventricle and ascending aorta. Pieces of the tissue taken from the posterior region of the retina were fixed in 2.5% glutaraldehyde-1.5% paraformaldehyde(0.1M Millonig's phosphate buffer, pH 7.3) and 1% osmium tetroxide(0.1M Millonig's phosphate buffer, pH7.3), and embedded in araldite mixture. The ultrathin sections contrasted with uranyl acetate and lead citrate were observed with JEM 100 CX-II electron microscope. The results were as follow; 1. The morphological changes of the pigment epithelial cells were not pronounced after exposure to 3,000 rads of X-ray. But on the 6th hour after exposure to 6,000 rads of X-ray, bulging nuclear membrane protruding into the cytoplasm and nuclear chromatin clumped into numerous masses along the nuclear membrane were observed. At the 2nd and 6th day post-irradiation, partial cytolysis or necrosis were seen. 2. The thickness of the Bruch's membrane of the experimental groups were increased in the time and dose range covered by this study, and splitting or diffusing basal laminae of the choriocapillary layer were observed frequently in the experimental group. Above results suggest that large amount(6,000 rads) of head irradiation induce direct hazardous effects on the pigment epitherial cells and Bruch's membrane of the retina of the rat, but pigment epithelial cells are more radioresistant than Bruch's membrane.

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Interaction Between TCP and MAC-layer to Improve TCP Flow Performance over WLANs (유무선랜 환경에서 TCP Flow의 성능향상을 위한 MAC 계층과 TCP 계층의 연동기법)

  • Kim, Jae-Hoon;Chung, Kwang-Sue
    • Journal of KIISE:Information Networking
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    • v.35 no.2
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    • pp.99-111
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    • 2008
  • In recent years, the needs for WLANs(Wireless Local Area Networks) technology which can access to Internet anywhere have been dramatically increased particularly in SOHO(Small Office Home Office) and Hot Spot. However, unlike wired networks, there are some unique characteristics of wireless networks. These characteristics include the burst packet losses due to unreliable wireless channel. Note that burst packet losses, which occur when the distance between the wireless station and the AP(Access Point) increase or when obstacles move temporarily between the station and AP, are very frequent in 802.11 networks. Conversely, due to burst packet losses, the performance of 802.11 networks are not always as sufficient as the current application require, particularly when they use TCP at the transport layer. The high packet loss rate over wireless links can trigger unnecessary execution of TCP congestion control algorithm, resulting in performance degradation. In order to overcome the limitations of WLANs environment, MAC-layer LDA(Loss Differentiation Algorithm)has been proposed. MAC-layer LDA prevents TCP's timeout by increasing CRD(Consecutive Retry Duration) higher than burst packet loss duration. However, in the wireless channel with high packet loss rate, MAC-layer LDA does not work well because of two reason: (a) If the CRD is lower than burst packet loss duration due to the limited increase of retry limit, end-to-end performance is degraded. (b) energy of mobile device and bandwidth utilization in the wireless link are wasted unnecessarily by Reducing the drainage speed of the network buffer due to the increase of CRD. In this paper, we propose a new retransmission module based on Cross-layer approach, called BLD(Burst Loss Detection) module, to solve the limitation of previous link layer retransmission schemes. BLD module's algorithm is retransmission mechanism at IEEE 802.11 networks and performs retransmission based on the interaction between retransmission mechanisms of the MAC layer and TCP. From the simulation by using ns-2(Network Simulator), we could see more improved TCP throughput and energy efficiency with the proposed scheme than previous mechanisms.

Preparation and Characterization of MFIS Using PT/BFO/$HFO_2$/Si Structures

  • Kim, Kwi-Junga;Jeong, Shin-Woo;Han, Hui-Seong;Han, Dae-Hee;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.80-80
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    • 2009
  • Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

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Fabrication of Parylene Buffered $H:LiNbO_3$ Optical Modulator (Parylene 버퍼층 구조 $H:LiNbO_3$ 광변조기 제작)

  • Huh, Hyun;Kim, Hee-Ju;Kang, Dong-Sung;Pan, Jae-Kyung
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.3
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    • pp.85-91
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    • 1999
  • $H:LiNbO_3$ optical modulator with Cu/parylene electrode layer, which has a merits in the bandwidth, power consumption and fabrication conditions as compared with conventional Au/Cr/$SiO_2$, is proposed and fabricated. Analysis and design of optical modulator is performed by finite element calculation. Various unit processes for fabricating the proposed modulator, 1550nm $H:LiNbO_3$ optical waveguide, parylene buffer layer, and CPW Cu electrode, were developed, After dicing and end-face polishing of fabricated modulator chip, optical modulation responses as sawtooth electrical driving voltage has been measured at low frequencies. Properties of optical waveguide had not been changed before and after Cu/parylene electrode processes, which make confirm the reproducible fabrication of optical modulator.

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