• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.43-48
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• 2001

The stability and efficiency of organic light emitting devices are the most critical problems to be solved. The devices based on tris-8-(hydroxyquinoline) aluminum ($Alq_3$) and N,N-diphenyl-N,N-bis(3-methylphenyl)-1, 1-biphenyl-4,4-diamine (TPD) were used to study the effects of buffer layers on their characteristics. We have investigated the characteristic effects of CuPc (copper phthalocyanine) and pentacene buffer layers on the device characteristics, the (5${\sim}$20 nm thick) CuPc layers and the (10${\sim}$20 nm thick) pentacene layers were deposited. Efficiency was slightly improved and the turn-on voltages of the devices with the buffer layers were observed to have lower values than those of the devices without the buffer layers. It is believed that this result is attributed to the improvement of hole injection capability through the buffer layers into hole transport layer (HTL). We have also studied the atomic force microscopic images of the TPD layers deposited on the buffer layer and the bare ITO.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.377-382
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• 1998

GaN epilayers having good adhesion and quality were obtained directly on the sapphire {1120} substrates by the OMVPE method without introducing a buffer layer at the lower temperature. The preferred orientations of epilayers turned out to be <0002> and at least 4 kinds of epilayers were competitively grown. Slight distortions of lattices caused by lattice mismatches between sapphire and GaN were observed at the lattices within 2~3 nm region from the interface. Accordingly, TEM investigation revealed that GaN epilayers could be grown on sapphire {1120} planes without a buffer layer.

• Journal of the Korean Applied Science and Technology
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• v.19 no.1
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• pp.68-72
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• 2002

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/$Alq_{3}$/Al as a reference, and the other is ITO/PVK/TPD/$Alq_{3}$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.146-148
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• 2012

In our study, we have focused on optimizing good quality of ZnS buffer layer by chemical bath deposition (CBD) from a bath containing $ZnSO_4$, Thiourea and Ammonia in aqueous solution onto CIGS solar cells. The influence of deposition parameter such as pH, deposition temperature, stirring speed played a very important role on transmission, homogeneity, crystalline of ZnS buffer layer. The transmission spectrum showed a good transmission characteristic above 80% invisible spectral region. CIGS thin flim solar cell with ZnS buffer layer has been realized with the efficiency of 14.2%.

• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.577-580
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• 2014

Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.234-235
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• 2002

NdFeB 박막자석은 Sputtering, MBE, Laser ablation법에 의해 제조되고 있으며[1-3] milli-size motor[4], magnetic recording media[5], micro-patterning[3]등에 응용될 수 있다. 최근에는 MEMS(Micro-electro mechanical system)분야에서도 잠재적 응용가능성을 지니고 있는 것으로 알려져 있다. 최근에는 NdFeB 박막 제조 시 자성층의 산화방지 및 자기 특성을 향상을 위하여 buffer layer를 이용한 많은 연구가 이루어지고 있다.[6] (중략)

• Journal of Powder Materials
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• v.24 no.3
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• pp.248-253
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• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).