• Title/Summary/Keyword: Buffer(Memory)

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Policy for Selective Flushing of Smartphone Buffer Cache using Persistent Memory (영속 메모리를 이용한 스마트폰 버퍼 캐시의 선별적 플러시 정책)

  • Lim, Soojung;Bahn, Hyokyung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.1
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    • pp.71-76
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    • 2022
  • Buffer cache bridges the performance gap between memory and storage, but its effectiveness is limited due to periodic flush, performed to prevent data loss in smartphones. This paper shows that selective flushing technique with small persistent memory can reduce the flushing overhead of smartphone buffer cache significantly. This is due to our I/O analysis of smartphone applications in that a certain hot data account for most of file writes, while a large proportion of file data incurs single-writes. The proposed selective flushing policy performs flushing to persistent memory for frequently updated data, and storage flushing is performed only for single-write data. This eliminates storage write traffic and also improves the space efficiency of persistent memory. Simulations with popular smartphone application I/O traces show that the proposed policy reduces write traffic to storage by 24.8% on average and up to 37.8%.

An Efficient Spatial Index Technique based on Flash-Memory (플래시 메모리 기반의 효율적인 공간 인덱스 기법)

  • Kim, Joung-Joon;Sim, Hee-Joung;Kang, Hong-Koo;Lee, Ki-Young;Han, Ki-Joon
    • Journal of Korea Spatial Information System Society
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    • v.11 no.2
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    • pp.133-142
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    • 2009
  • Recently, with the advance of wireless internet and the frequent use of mobile devices, demand for LBS(Location Based Service) is increasing, and research is required on spatial indexes for the storage and maintenance of spatial data to provide efficient LBS in mobile device environments. In addition, the use of flash memory as an auxiliary storage device is increasing in order to store large spatial data in a mobile terminal with small storage space. However, the application of existing spatial indexes to flash-memory lowers index performance due to the frequent updates of nodes. To solve this problem, research is being conducted on flash-memory based spatial indexes, but the efficiency of such spatial indexes is lowered by low utilization of buffer and flash-memory space. Accordingly, in order to solve problems in existing flash-memory based spatial indexes, this paper proposed FR-Tree (Flash-Memory based R-Tree) that uses the node compression technique and the delayed write operation technique. The node compression technique of FR-Tree increased the utilization of flash-memory space by compressing MBR(Minimum Bounding Rectangle) of spatial data using relative coordinates and MBR size. And, the delayed write operation technique reduced the number of write operations in flash memory by storing spatial data in the buffer temporarily and reflecting them in flash memory at once instead of reflecting the insert, update and delete of spatial data in flash-memory for each operation. Especially, the utilization of buffer space was enhanced by preventing the redundant storage of the same spatial data in the buffer. Finally, we perform ed various performance evaluations and proved the superiority of FR-Tree to the existing spatial indexes.

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Efficiently Managing the B-tree using Write Pattern Conversion on NAND Flash Memory (낸드 플래시 메모리 상에서 쓰기 패턴 변환을 통한 효율적인 B-트리 관리)

  • Park, Bong-Joo;Choi, Hae-Gi
    • Journal of KIISE:Computer Systems and Theory
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    • v.36 no.6
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    • pp.521-531
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    • 2009
  • Flash memory has physical characteristics different from hard disk where two costs of a read and write operations differ each other and an overwrite on flash memory is impossible to be done. In order to solve these restrictions with software, storage systems equipped with flash memory deploy FTL(Flash Translation Layer) software. Several FTL algorithms have been suggested so far and most of them prefer sequential write pattern to random write pattern. In this paper, we provide a new technique to efficiently store and maintain the B-tree index on flash memory. The operations like inserts, deletes, updates of keys for the B-tree generate random writes rather than sequential writes on flash memory, leading to inefficiency to the B-tree maintenance. In our technique, we convert random writes generated by the B-tree into sequential writes and then store them to the write-buffer on flash memory. If the buffer is full later, some sequential writes in the buffer will be issued to FTL. Our diverse experimental results show that our technique outperforms the existing ones with respect to the I/O cost of flash memory.

Special Memory Design for Graphics (그래픽스 전용 메모리 설계)

  • 김성진;문상호
    • Journal of Korea Multimedia Society
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    • v.2 no.1
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    • pp.80-88
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    • 1999
  • In this paper, we propose a Special Memory for Graphics(SMGRA) which accelerates memory access time for graphics operations. The SMGRA has a rectangular array memory architecture which has already proposed by Whelan to process pixels in the rectangle area simultaneously, but the SMGRA should improve address decoding time and reduce the number of address pins by using address multiplexing scheme. The SMGRA has a Z-value comparator in the DRAM which is to convert read-modify-write Z buffer into single-write only operation that improves approximately 50% frame buffer access bandwidth.

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FAST : A Log Buffer Scheme with Fully Associative Sector Translation for Efficient FTL in Flash Memory (FAST :플래시 메모리 FTL을 위한 완전연관섹터변환에 기반한 로그 버퍼 기법)

  • Park Dong-Joo;Choi Won-Kyung;Lee Sang-Won
    • The KIPS Transactions:PartA
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    • v.12A no.3 s.93
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    • pp.205-214
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    • 2005
  • Flash memory is at high speed used as storage of personal information utilities, ubiquitous computing environments, mobile phones, electronic goods, etc. This is because flash memory has the characteristics of low electronic power, non-volatile storage, high performance, physical stability, portability, and so on. However, differently from hard disks, it has a weak point that overwrites on already written block of flash memory is impossible to be done. In order to make an overwrite possible, an erase operation on the written block should be performed before the overwrite, which lowers the performance of flash memory highly. In order to solve this problem the flash memory controller maintains a system software module called the flash translation layer(FTL). Of many proposed FTL schemes, the log block buffer scheme is best known so far. This scheme uses a small number of log blocks of flash memory as a write buffer, which reduces the number of erase operations by overwrites, leading to good performance. However, this scheme shows a weakness of low page usability of log blocks. In this paper, we propose an enhanced log block buffer scheme, FAST(Full Associative Sector Translation), which improves the page usability of each log block by fully associating sectors to be written by overwrites to the entire log blocks. We also show that our FAST scheme outperforms the log block buffer scheme.

Dynamic Voltage and Frequency Scaling based on Buffer Memory Access Information (버퍼 메모리 접근 정보를 활용한 동적 전압 주파수 변환 기법)

  • Kwak, Jong-Wook;Kim, Ju-Hwan
    • Journal of the Korea Society of Computer and Information
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    • v.15 no.3
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    • pp.1-10
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    • 2010
  • As processor platforms are continuously moving toward wireless mobile systems, embedded mobile processors are expected to perform more and more powerful, and therefore the development of an efficient power management algorithm for these battery-operated mobile and handheld systems has become a critical challenge. It is well known that a memory system is a main performance limiter in the processor point of view. Although many DVFS studies have been considered for the efficient utilization of limited battery resources, recent works do not explicitly show the interaction between the processor and the memory. In this research, to properly reflect short/long-term memory access patterns of the embedded workloads in wireless mobile processors, we propose a memory buffer utilization as a new index of DVFS level prediction. The simulation results show that our solution provides 5.86% energy saving compared to the existing DVFS policy in case of memory intensive applications, and it provides 3.60% energy saving on average.

Design of an Asynchronous Data Cache with FIFO Buffer for Write Back Mode (Write Back 모드용 FIFO 버퍼 기능을 갖는 비동기식 데이터 캐시)

  • Park, Jong-Min;Kim, Seok-Man;Oh, Myeong-Hoon;Cho, Kyoung-Rok
    • The Journal of the Korea Contents Association
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    • v.10 no.6
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    • pp.72-79
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    • 2010
  • In this paper, we propose the data cache architecture with a write buffer for a 32bit asynchronous embedded processor. The data cache consists of CAM and data memory. It accelerates data up lood cycle between the processor and the main memory that improves processor performance. The proposed data cache has 8 KB cache memory. The cache uses the 4-way set associative mapping with line size of 4 words (16 bytes) and pseudo LRU replacement algorithm for data replacement in the memory. Dirty register and write buffer is used for write policy of the cache. The designed data cache is synthesized to a gate level design using $0.13-{\mu}m$ process. Its average hit rate is 94%. And the system performance has been improved by 46.53%. The proposed data cache with write buffer is very suitable for a 32-bit asynchronous processor.

Enhancing LRU Buffer Replacement Policy with Delayed Write of Not-cold-dirty-pages for Flash Memory (플래시 메모리를 위한 Not-cold-Page 쓰기지연을 통한 LRU 버퍼교체 정책 개선)

  • Jung Ho-Young;Park Sung-Min;Cha Jae-Hyuk;Kang Soo-Yong
    • Journal of KIISE:Computer Systems and Theory
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    • v.33 no.9
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    • pp.634-641
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    • 2006
  • Flash memory has many advantages like non-volatility and fast I/O speed, but it has also disadvantages such as not-in-place-update data and asymmetric read/write/erase speed. For the performance of flash memory storage, it is essential for the buffer replacement algorithms to reduce the number of write operations that also affects the number of erase operations. A new buffer replacement algorithm is proposed in this paper, that delays the writes of not-cold-dirty pages in the buffer cache of flash storage. We show that this algorithm effectively decreases the number of write operations and erase operations without much degradation of hit ratio. As a result overall performance of flash I/O speed is improved.

Buffer Cache Management based on Nonvolatile Memory to Improve the Performance of Smartphone Storage (스마트폰 저장장치의 성능개선을 위한 비휘발성메모리 기반의 버퍼캐쉬 관리)

  • Choi, Hyunkyoung;Bahn, Hyokyung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.16 no.3
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    • pp.7-12
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    • 2016
  • DRAM is commonly used as a smartphone memory medium, but extending its capacity is challenging due to DRAM's large battery consumption and density limit. Meanwhile, smartphone applications such as social network services need increasingly large memory, resulting in long latency due to additional storage accesses. To alleviate this situation, we adopt emerging nonvolatile memory (NVRAM) as smartphone's buffer cache and propose an efficient management scheme. The proposed scheme stores all dirty data in NVRAM, thereby reducing the number of storage accesses. Moreover, it separately exploits read and write histories of data accesses, leading to more efficient management of volatile and nonvolatile buffer caches, respectively. Trace-driven simulations show that the proposed scheme improves I/O performances significantly.

A Prediction-Based Data Read Ahead Policy using Decision Tree for improving the performance of NAND flash memory based storage devices (낸드 플래시 메모리 기반 저장 장치의 성능 향상을 위해 결정트리를 이용한 예측 기반 데이터 미리 읽기 정책)

  • Lee, Hyun-Seob
    • Journal of Internet of Things and Convergence
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    • v.8 no.4
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    • pp.9-15
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    • 2022
  • NAND flash memory is used as a medium for various storage devices due to its high data processing speed with low power consumption. However, since the read processing speed of data is about 10 times faster than the write processing speed, various studies are being conducted to improve the speed difference. In particular, flash dedicated buffer management policies have been studied to improve write speed. However, SSD(solid state disks), which has recently been used for various purposes, is more vulnerable to read performance than write performance. In this paper, we find out why read performance is slower than write performance in SSD composed of NAND flash memory and study buffer management policies to improve it. The buffer management policy proposed in this paper proposes a method of improving the speed of a flash-based storage device by analyzing the pattern of read data and applying a policy of pre-reading data to be requested in the future from NAND flash memory. It also proves the effectiveness of the read-ahead policy through simulation.