• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.189-192
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• 2011

A flexible back-light unit (FBLU) is fabricated by embedding plasma discharge clusters in a flexible polymer matrix. The brightness uniformity of an FBLU was measured for various combinations of optical sheets and compared with the simulated results for various bending angles. A gap between light sources causes distinctive integrated brightness curves which have two inflection points depending on bending angle. The brightness distribution of a simulated BLU was in good agreement with that of an actual plasma BLU except for a dark area that appeared at the center of the simulated BLU. The real and simulated BLUs both clearly showed an angle dependency caused by mirror images located between point light sources. On the basis of these results, it is suggested that these mirror-like images could be a major factor in determining the characteristics of FBLUs.

• 한국생물환경조절학회:학술대회논문집
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• 한국생물환경조절학회 2001년도 봄 학술발표논문집
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• pp.43-44
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• 2001

Recently the sawdust culture of Lentinus edodes(Berk.) has been gradually extended replacing the log cultivation in Korea. It is indeed able to reduce the use of log and cultivation period in controlled facilities, but is not yet able to produce the high-quality mushroom. The objectives of this study were to examine the effects of low and alternated temperature treatments during the fruiting period on the quality of oak mushroom. At low temperature treatments of 1$^{\circ}C$ and 10$^{\circ}C$, the crack, lightness, hardness, and other characteristics for the high-quality oak mushroom were not improved. However, the crack, brightness, and hardness of cap were increased at alternated temperatures of 5-10$^{\circ}C$ than the other temperature treatments. In conclusion, the alternated temperature treatments were more effective than the low temperature treatment for improving the indices of high-quality oak mushroom such as the crack, brightness and hardness of cap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.512-513
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• 2008

The study examined what effects 100kHz PWM LED light irradiation causes to bone marrow cells of SD-Rat when LED characterized cheap and safe is used onto the light therapy by replacing the low 1evel laser. We developed the equipment palpating cell proliferation using a high brightness LED. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity, frequency and so on. Especially, to control the light irradiation frequency, FPGA was used, and to control the change of output value, TLC5941 was used. Consequent1y, the current value could be controlled by the change of 1eve1 in Continue Wave(CW) and Pulse Width Modulation(PWM), and the output of a high brightness LED could be controlled stage by stage. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of Rat bone marrow cells was verified in 100kHz PWM LED light irradiation group as compared to non-irradiation group.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.851-854
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• 2004

By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/$cm^2$, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 ${\mu}m$. The gate current was less than 10 % of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.17.1-17.1
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• 2011

Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as a type of implantable LED biosensor and as a therapy tool.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.691-694
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• 2006

So far, we have done much research improving quality of LCD TV. Recently, we have developed 26" WXGA LCD TV by advance fringe field switching (AFFS) technology with smooth and every scene realistic in color image that obtained from the amazing authentic color delivery, optical characteristic and fast response time. Our upgrade device has shown the brightness over 600nits (Color shift <0.015 and Transmittance ratio > 5.5%), gray to gray response time under 6ms, contrast ratio over 1200:1 and viewing angle over 178/178, respectively. And also, motion artifacts improved by fast response of LC with low viscosity, cell gap and dielectric constant.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Bulletin of the Korean Chemical Society
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• 제30권9호
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• pp.1933-1938
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• 2009

New $\pi$-conjugated polymer with vinylene linkage, poly((10-hexyl-3,7-phenothiazine)-alt-(4-(4-butyl-phenyl)- 3,5-diphenyl-4H-[1,2,4]triazole)-3,5-vinylene) (PTV-TAZ) was synthesized by the Heck coupling reaction. The photoluminescence (PL) maximum wavelength and the band gap energy of PTV-TAZ film were 555 nm and 2.41 eV, respectively. The HOMO energy level of PTV-TAZ was -4.99 eV, which was slightly lower than that of PTV (-4.89 eV). Electron deficient aromatic 1,2,4-triazole (TAZ) in the polymer backbone does not affect the HOMO energy level significantly. The maximum efficiency and brightness of double layer structured electroluminescent (EL) device (ITO/PEDOT (30 nm)/PTV-TAZ (60 nm)/Al) were 0.247 cd/A and 553 cd/$m^2$, respectively, which were significantly higher than those of the device based PTV (1.65 ${\times}\;10^{-4}$ cd/A and 4.3 cd/$m^2$). This is due to that TAZ unit improves electron transporting ability in the emissive layer. The turn-on voltage (defined as the voltage required to give a luminescence of 1 cd/$m^2$) of brightness of the device based on PTV-TAZ was 12.0 V, which was similar to that the based on PTV (11.5 V). This is due to that the ionization potential of PTV-TAZ is very similar to that of PTV.

• 한국컴퓨터정보학회논문지
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• 제16권4호
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• pp.23-28
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• 2011

본 논문에서는 복부의 초음파 영상을 확대할 경우에 발생하는 영상의 품질 저하를 최소화하기 위하여 원본 영상과 확대된 결과 영상 간의 명암도 차이와 보간 수행 시에 적용되는 가중치 값을 퍼지 기법에 적용하여 영상을 확대하는 방법을 제안한다. 제안된 방법은 기존의 양선형 보간법으로 도출된 결과 영상의 픽셀과 원본 영상 픽셀 간의 명암도 차이와 보간 수행시에 네 개의 픽셀 값에 곱하게 되는 가중치 값을 퍼지 소속 함수에 적용하여 원본 영상의 픽셀 정보와 가장 근접한 특징을 가진 확대된 결과 영상의 픽셀 정보를 도출한다. 제안된 방법을 실험한 결과, 기존의 양선형 보간법에 비해 복부의 초음파 영상을 확대할 때 발생하는 흐림 현상이 상대적으로 감소하여 영상의 품질이 개선되는 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.910-915
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.