• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.1
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• pp.1-7
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• 1986

The GaAs bulk single crystals are grown by the Horizontal Bridgman method. During the growth, one of the problems in Bridgman method is the boat wetting between GaAs molten and silica boat. This boat wetting may result in another nucleation to form twin crystals. In this study, We find that the optimal size for sand blasting is 320 mesh. Backfilling the ampoule with argon gas during the vaccum bake-out decreaes the boat wetting. The reaction mechanism of Ga with quartz to produce suboxide, Ga2O, and sillion is discussed.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.64-72
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• 1996

Calculation of the amount of excess arsenic charge has been carried out for the single crystal growth of GaAs with 1-T HB(single temperature zone horizontal Bridgman) method which has no low temperature arsenic zone. Based upon the investigation of the thermochemical properties of the Ga and As system, a general equation for the excess dimension of the ampoule and temperature gradient of the furnace. From this result, a theoretical background of the 1-T HB method has been constructed for the single crystal growth of GaAs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.1-7
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• 2006

Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.58.2-58.2
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• 2007

• 대한방사선방어학회:학술대회논문집
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• 2011.11a
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• pp.218-219
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• 2011

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.81-87
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• 1996

The mechanism of silicon incorporation has been analyzed for the boat-grown GaAs crystals on the basis of phase equilibrium in the Ga and As system. Comparison was made between silicon concentrations calculated from the thermodynamics of incorporation reaction and carrier concentrations measured from van der Pauw method. For the 1-T HB(single temperature zone horizontal Bridgman) crystals, calculated concentrations were 5.3 ×10 15 (atoms/cm3), measured as 9.8 ×10 15(/cm3) at the seed part. They were calculated to be 1.1 ×10 16(atoms/cm3) and measured as 1.5 ×10 16(/cm3) for the 2-T(double temperature zone) HB crystals. On the other hand, it was found to be closer between the calculated and measured silicon concentrations for the VGF(vertical gradient freeze) crystals, which were grown within half the run time compared with 1-T or 2-T HB method.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.451-454
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• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.