• Journal of the Korean earth science society
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• v.23 no.1
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• pp.52-58
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• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• Journal of Korea Foundry Society
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• v.17 no.1
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• pp.76-84
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• 1997

An investigation of the effects of transverse magnetic field on melt convection and macrosegregation in vertical Bridgman growth of Te doped InSb was carried out by means of microstructure observation, the measurement of Te distribution by Hall measurement, electrical resistivity measurement and X-ray analysis. Prior to the experiments, interface stability, convective instability and suppression of convection by magnetic field were examined. A thermosolutal convection in the Te doped InSb melt occurred in the examined growth condition without magnetic field. The effective distribution coefficient, $K_{eff}$, was about 0.35 without magnetic field, 0.45 with magnetic field of 2kG, and 0.7 at 4kG. It was found that the stronger the applied magnetic field was, the more the convection was suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• Journal of Korea Foundry Society
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• v.14 no.1
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• pp.28-34
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• 1994

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.36-46
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• 1984

The Ga1-xInxSe single crystals for 0.0 < x < 0.1 and 0.8 < 1.0 were grown by the Bridgman method. The crystal structure of Ga1-xInxSe is found to be hexagonal for 0.0 < X < 1.0. The Ga1-xInxSesingle crystals have indirect energy gap with a temperature coefficient dEg/dT= -(2.4 - 4.3) $\times$ 10-4 eV/K in the range 60-250K. The temperature dependence of the energy gap can be explained by the electron-Phonos interaction model.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.19-31
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• 1996

To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.286-291
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• 2000

$Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.443-448
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• 2010

In this work, the scintillation properties of CsI:Na crystal were investigated as radiation detection sensor. This scintillation material was grown by a 2-zone vertical Bridgman method. Under X-ray excitation the crystal shows a broad emission band between 280 nm and 690 nm wavelength range, peaking at 413 nm. Energy resolution for $^{137}Cs$ 662 keV $\gamma$-rays of the crystal was measured to be 6.9 %(FWHM). At room temperature, the crystal exhibits three exponential decay time components. The fast and major component of scintillation time profile of the crystal emission decays with a 457 ns time constant. Absolute light yield of the crystal was estimated to be 53,000 ph/MeV using LAAPD. The sample crystal shows proportionality of 30 % in the measured energy range from 31 to 1,333 keV. And the $\alpha/\beta$ ratio of the crystal was 0.14.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.130-137
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• 1994

SbSBr, BiSBr, SbSBr : Co, BiSBr : Co, SbSBr : Ni 및 BiSBr : Ni 단결정을 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며 광학적 energy band gap 구조는 간접적이형이었고 energy gap의 온도의존성은 일차 및 이차 상전이점에서 anomalous 한 특성이 나 타 났다. 불순물로 첨가한 cobalt와 nickel은 Td 대칭점에 Co2+ ion, Co3+ ion 및 Ni2+ ion으로 위치하며 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak들이 나타난다.