• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.275-281
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• 2017

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Fire Science and Engineering
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• v.31 no.6
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• pp.91-98
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• 2017

The present paper is a study on the tracking characteristics depending on accelerated degradation of PVC insulation material. In order to insulation degradation of PVC insulation material, the Arrhenius equation, a type of accelerated degradation test formula, was used to conduct accelerated degradation experiments with experiment samples prepared at the following age equivalents: 0, 10, 20, 30 and 40 years. Afterwards, a tracking experiment was conducted on the accelerated experiment samples as part of the KS C IEC 60112 criteria. When measuring the PVC tracking features according to the accelerated aging, the results showed that when 0.1% of ammonium chloride was added to the PVC insulating material, but no tracking occurred. However, depending on the age equivalent, The results of analyzing the current waveform and voltage waveform of the tracking propagation process showed the age equivalent from 0 years to 40 years displayed a break down in insulation resistance and even the BDB(before dielectric breakdown) sections did not maintain the same functionality of the original material. Based on a criterion of an age equivalent of 0 years, material with an age equivalent of 10 years posed a 1.4 times greater risk, material with an age equivalent of 20 years posed a 2 times greater risk, material with an age equivalent of 30 years posed a 4.6 times greater risk, and material with an age equivalent of 40 years posed a 7 times greater risk.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.410-415
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• 1999

Yakju was sterilized with high-voltage pulses of short time of a continuous pulsed electric field (PEF) system. The initial microbial counts of Yakju were $2.2{\times}10^{5}$ CFU/mL for total aerobes. The pH, acidity and electric conductivity of Yakju were 3.82, 0.37% and 1.24 mS/cm, respectively. Yakju was treated with exponential-wave formed electric pulses of 100 Hz for $0{\sim}4000{\mu}s$ under the field strength of $20{\sim}35\;kV/cm$. The lethal effect of electric fields on microorganisms was resulted from the breakdown of the cell membrane induced by the transmembrane electric potential. The critical values of the external field for the sterilization were 16.0 kV/cm for total aerobes. Logarithmic survival rates decreased linearly at low electric field strength, but curvilinearly at high electric field strength with treatment time. The sterilization of Yakju was more largely affected by the electric field strength than by the treatment time. Any changes in pH, acidity, and the growth of microorganisms were not found in the PEF treated Yakju during the storage at both $4^{\circ}C\;and\;30^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.822-828
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• 2002

Fabrication and electrical characterization of R. F. High-power unit capacitors were investigated to study on condition of fabrication processing for R. F. High-power unit capacitor and electrical characteristics according to addition of $ZrO_2$. The unit capacitors were fabricated using tape casting. The optimum mixture ratio of dielectrics and mixing binder for the slurry fabrication was 57.5∼60.0: 42.5∼40.0 wt%. The slurry viscosity was 4000∼5000 cps and casting state of green tape fabricated using these slurry was excellent. Optimum stacking was made by 200 kg/$cm^2$ pressure with 80$^{\circ}C$ heating. $ZrO_2$ was added to improve the electrical characteristics of unit capacitor, especially breakdown characteristics. The dielectric constant and loss factor of the unit condenser having different $ZrO_2$ amounts was not changed in the addition range of 1 to 5 wt%. Also, dielectric constant was not changed in the frequency range of 10 to 500 kHz. It was found that characteristics of resistance voltage was improved through the formation of $CaZrO_3$ and the reduction of particle size as about 3wt% $ZrO_2$ was added.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Journal of Animal Science and Technology
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• v.46 no.5
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• pp.871-878
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• 2004

Pulsed electric fields(PEF) technology is one of the latest nonthermal methods of food processing for obtaining safe and minimally processed foods. This technology can be effectively explored for obtaining safe food with minimum effect on nutritional, flavor, rheological and sensory qualities of food products. The process involves the application of high voltage(typically 20 ${\sim}$ 80 kv/cm) to foods placed between two electrodes. The mode of inactivation of microorganism; by PEP processing has been postulated in term; of electric breakdown and electroporation. The extent of destruction of microorganisms in PEF processing depends mainly on the electric field strength of the pulses and treatment time. For each cell types, a specific critical electric field strength and specific critical treatment time are required depending on the cell characteristics and the type and strength of the medium where they have been present. The effect also depends on the types of microorganisms and their phase of growth. A careful combination of processing parameters has to be selected for effective processing. The potential applications of PEF technology are numerous ranging from biotechnology to food preservation. With respect to food processing, it has already been established that, the technology is non-thermal in nature, economical and energy efficient, besides providing minimally processed foods. This article gives a brief overview of this technology for food processing applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.6
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• pp.25-32
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• 2021

In this study, it proposes a mode converter that is relatively easy to implement and can shorten the transmission line length of the final combining port and it was fabricated and tested by applying it to an 8-way spatial combiner. The proposed mode converter converts the signal converted from the doorknob-shaped circular disk connected to the ground into the TM₀₁ mode by opening it in the circular waveguide. The 8-way waveguide spatial combiner is designed and implemented so that 8 signals input from the H-plane are combined in a circular waveguide at the center, and the final combining mode is TM₀₁. The test results confirmed excellent performance with an insertion loss of less than 0.4dB and a combining efficiency of 95% or more. In addition, it was confirmed that it is suitable for high output by calculating the breakdown voltage and discharge threshold power of the new mode conversion structure through electric field analysis. The results confirmed through this study are expected to be applicable to high-power, high-efficiency SSPA in various fields in the future.

• Journal of Platform Technology
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• v.8 no.3
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• pp.10-21
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• 2020

Partial discharge occurs a lot in high-voltage power equipment such as switchgear, transformers, and switch gears. Partial discharge shortens the life of the insulator and causes insulation breakdown, resulting in large-scale damage such as a power outage. There are several types of partial discharge that occur inside the product and the surface. In this paper, we design a predictive model that can predict the pattern and probability of occurrence of partial discharge. In order to analyze the designed model, learning data for each type of partial discharge was collected through the UHF sensor by using a simulator that generates partial discharge. The predictive model designed in this paper was designed based on CNN during deep learning, and the model was verified through learning. To learn about the designed model, 5000 training data were created, and the form of training data was used as input data for the model by pre-processing the 3D raw data input from the UHF sensor as 2D data. As a result of the experiment, it was found that the accuracy of the model designed through learning has an accuracy of 0.9972. It was found that the accuracy of the proposed model was higher in the case of learning by making the data into a two-dimensional image and learning it in the form of a grayscale image.