• Title/Summary/Keyword: Breakdown field

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Electrical Characterization of Lateral NiO/Ga2O3 FETs with Heterojunction Gate Structure (이종접합 Gate 구조를 갖는 수평형 NiO/Ga2O3 FET의 전기적 특성 연구)

  • Geon-Hee Lee;Soo-Young Moon;Hyung-Jin Lee;Myeong-Cheol Shin;Ye-Jin Kim;Ga-Yeon Jeon;Jong-Min Oh;Weon-Ho Shin;Min-Kyung Kim;Cheol-Hwan Park;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.413-417
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    • 2023
  • Gallium Oxide (Ga2O3) is preferred as a material for next generation power semiconductors. The Ga2O3 should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga2O3 is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu2O. Research the lateral-type FET structure of NiO/Ga2O3 heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×1017 to 1×1019 cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at ID = 1×10-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga2O3 region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at ID =1×10-3 A/mm.

Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure (다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석)

  • Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Gwang-Hee Jung;Jin-Ki Kang;Tae-Kyung Lee;Hyoung-Jae Kim;Won-Jae Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.1
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    • pp.1-7
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    • 2024
  • β-Ga2O3 is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga2O3 single crystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga2O3 single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

Epidemiology and Control of Rice Blast in Korea (한국(韓國)에서의 도열병(病) 발생(發生), 만연(蔓延)과 그 방제(防除))

  • Park, Jong Seong
    • Korean Journal of Agricultural Science
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    • v.12 no.2
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    • pp.356-369
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    • 1985
  • In Korea, inevitable researches for the blast control exactly started from 1927 by the organization of Office of Rural Development with the local extensive outbreak of panicle blast at Jeonlla Buk-Do Province in 1926. At present, the rice blast is still one of the most destructive and widespread diseases in spite of considerable contributions by rice scientists, particularly plant pathologists during last 55 years in Korea. Rice blast control and management are very difficult because of the marked variability in pathogenicity of the blast fungus. From the results obtained through the disease surveys during last 70 years, different 3 prevalence type of blast such as bimodal leaf-blast type, bimodal panicle-blast type and bimodal continual blast type were recognized. In generally speaking, pattern of blast outbreak is said to be characterized by severe outbreak of panicle blast after slight outbreak of leaf blast with discontinuity between leaf and panicle blast. So we have to pay much attention for successful management of panicle blast giving direct influence to rice yield. Main factors induce blast epidemic were pointed out to be breakdown of the disease resistance, nutritional unbalance such as excess application of nitrogen, delay of transplantation and longspell of rain fall by extensive surveys and researches on blast during last 70 years in Korea. The fact some of Japonica varieties such as Kokuryomiyako, Tamanishiki, Ginbozu and Pungok belong to varietal group A had been cultivated with extensive acrage over 30 years in this country should be mentioned by Korean rice scientists. Differences in field resistance between varieties in the same group are detectable and apparently small but sometimes epidemiologically significant differential effects may be found out in case of blast. Much more attention should be payed to accumulate the knowledges on field resistance for successful management of blast. Excess application of nitrogen is more effective to outbreak of panicle blast than that of leaf blast of IR varieties. In comparatively low level application of nitrogen infection rate of panicle blast of IR varieties is considerably high. Low temperature effects on outbreak of blast is very great. It results in remarkable increase of the inoculum potential on the leaf lesions and infection of panicle blast in leaf sheathes of IR varieties during the booting stage. In economic point of view, it is concluded that 5 times sprays of effective fungicides including 3 times before and 2 times after heading is good enough to control blast. We have experienced no one of control measures for blast is superior to all others. The integrated control measures was established as guideline of blast control around 1950 in Korea. This guideline must be helpful for rice growers as long as rice growing continue.

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Separation of Ferrous Materials from Municipal Solid waste Incineration Bottom Ash (생활폐기물(生活廢棄物) 소각(燒却) 바닥재의 자력선별(磁力選別)에 따른 ferrous material의 분리(分離) 특성(特性))

  • Um, Nam-Il;Han, Gi-Chun;You, Kwang-Suk;Cho, Hee-Chan;Ahn, Ji-Whan
    • Resources Recycling
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    • v.16 no.3 s.77
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    • pp.19-26
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    • 2007
  • The bottom ash of municipal solid waste incineration generated during incineration of municipal solid waste in metropolitan area consists of ceramics, glasses, ferrous materials, combustible materials and food waste and so on. Although the ferrous material was separated by the magnetic separation before the incineration process, of which content accounts for about $3{\sim}11%$ in bottom ash. The formation of a $Fe_3O_4-Fe_2O_3$ double layer(similar to pure Fe) on the iron surface was found during air-annealing in the incinerator at $1000^{\circ}C$. A strong thermal shock, such as that takes place during water-cooling of bottom ash, leads to the breakdown of this oxidation layer, facilitating the degradation of ferrous metals and the formation of corrosion products and it existed as $Fe_2O_3,\;Fe_3O_4\;and\;FeS_2$. So, many problems could occur in the use of bottom ash as an aggregate substitutes in construction field. Therefore, in this study, the separation of ferrous materials from municipal solid waste incineration bottom ash was investigated. In the result, the ferrous product(such as $Fe_2O_3,\;Fe_3O_4,\;FeS_2$ and iron) by magnetic separator at 3800 gauss per total bottom ash(w/w.%) accounted for about 18.7%, and 87.7% of the ferrous product was in the size over 1.18 mm. Also the iron per total bottom ash accounted for about 3.8% and the majority of it was in the size over 1.18 mm.