• 제목/요약/키워드: Breakdown Energy

검색결과 356건 처리시간 0.023초

디바이스 시뮬레이션 기술을 이용한 미세 n-MOSFET의 비등온 비형형장에 있어서의 특성해석 (Simulation of Miniaturized n-MOSFET based Non-Isothermal Non-Equilibrium Transport Model)

  • 최원철
    • 한국산업융합학회 논문집
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    • 제4권3호
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    • pp.329-337
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    • 2001
  • This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

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희박연소 및 EGR 엔진에서 초기 화염액 생성 및 성장에 관한 연구 (A Study on the Kernel Formation & Development for Lean Burn and EGR Engine)

  • 송정훈;선우명호
    • 한국자동차공학회논문집
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    • 제7권8호
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    • pp.24-33
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    • 1999
  • This paper investigate the effects of the variations of engine operation condition in the flame kernel formation and developmnet . A model for calculating the initial kernel development in spark ignition engines is formualted. It considered input of electrical energy, combustion energy release and heat transfer to the spark plyg, cylinder head, and unburned mixture. The model also takes into accounts strain rate of initial kernel and residual gas fraction. The breakdown process and the subsequent electrical power input initially control the kernel growth while intermediate growth is mainly dominated by diffusion or conduction. Then, the flame propagates by the chemical energy and turbulent flame expansion. Flame kernel development also influenced by engine operating conditions, for example, EGR rate, air-fuel ration and intake manifold pressure.

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Electrical Breakdown In flames

  • Uhm, Han S.
    • Journal of Korean Vacuum Science & Technology
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    • 제4권1호
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    • pp.33-37
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    • 2000
  • Properties of electrical discharge in flames and influence of plasma electrons on gas neutrals are investigated by making use of the ionization cross section of air. Frames have three distinctive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature T$\_$g/, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow a significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygen by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation.

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세라믹 코팅 Al 부스바의 전기적 특성 연구 (Study on Electrical Properties of Ceramic Coated Al Bus Bar)

  • 백승명;곽민환;곽동순
    • 전기학회논문지
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    • 제66권11호
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    • pp.1647-1650
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    • 2017
  • Bus bars are used in place of cables because they can carry more electrical energy with the same volume of conductors. This paper deals with the electrical properties of ceramic coating material for busbars. A ceramic coated samples were prepared for the electrical properties test. There are two types of samples. One is a sample without degradation, and the other is a sample degraded for 30 days. Four electrical properties tests were carried out in accordance with domestic standards. Four electrical characteristics tests are AC dielectric breakdown, V-t, lighting impulse dielectric breakdown, and discharge arc. Both samples showed excellent electrical properties, and the ceramic coating material is very good insulating materials for bus bar.

Electrical Breakdown in Flames

  • Han, S.Uhm
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.187-187
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    • 2000
  • Properties of electrical discharge in flames are investigated by making use of the ionization cross section of air. Fames have three distictive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygens by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation. How are you and your family in this new year\ulcorner Professor Choi! I plan to go back Korea on February 6. All my family members are fine and have good time because I am here. Once I am in Korea, I will call you. I am always grateful for your helpful hand. Thank you so much.

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1200V급 4H-SiC Trench MOSFET의 Design parameter에 따른 전기적 특성 분석 (Analysis of electrical characteristics according to the design parameter of 1200V 4H-SiC trench MOSFET)

  • 우제욱;서정주;진승후;구용서
    • 전기전자학회논문지
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    • 제24권2호
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    • pp.592-597
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    • 2020
  • SiC는 Si에 비해서 Breakdown field가 10배 높고, Energy gap이 3배 높기 때문에 높은 Breakdown voltage를 갖는 우수한 전력 MOSFET을 제작할 수 있다. 하지만 낮은 Mobility로 인한 높은 On저항을 갖기 때문에 이를 낮추기 위해서 Trench MOSFET이 제안되었지만 동시에 BV가 감소한다는 문제점을 갖는다. 본 논문에서는 1200V급 Trench MOSFET 설계를 목적으로 하며, 이를 해결하기 위해서 BV와 Ron에 대한 중요한 변수인 Epi 깊이, Trench 깊이, Trench 깊이에서 Epi 깊이까지의 거리에 대한 Split을 진행하여 최대 전계, BV, Ron의 신뢰성 특성을 비교 분석하였다. Epi 깊이가 증가할수록, Trench 깊이가 감소할수록, Trench 깊이에서 Epi 깊이가 감소할수록 최대 전계 감소, BV 증가, Ron 증가를 확인하였다. 모든 결과는 Sentaurus TCAD를 통해 Simulation 되었다.

Short Communication of Novel Application of Food Irradiation

  • Cheorun Jo;Lee, Ju-Wosn;Byunl, Myung-Woo
    • Preventive Nutrition and Food Science
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    • 제6권4호
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    • pp.253-256
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    • 2001
  • Irradiation of food is not only used for sanitation purposes but can be used for processing techniques to reduce or eliminate toxic or undesirable compounds on food. Irradiation wag effective to reduce the allergenicity of food by modification of the structure of proteins causing allergy reactions. Volatile N-nitrosmaine was reduced or eliminated by irradiation in the model system study and the breakdown products by irradiation did not recombine under human stomach conditions (pH 2,3, and 4,37$^{\circ}C$). The possibility of residual chlorophyll b reduction by irradiation was also found, and the model study indicated that irradiation be used to destroy chlorophyll b, resulting in protection from photooxidation in oil without acceleration of lipid oxidation during irradiation. In this paper, several on-going research projects for the application of food irradiation as a new processing technique are introduced, including reduction of food allergens, breakdown of volatile N-nitrosamine and residual chlorophyll b.

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1,700 V급 SiC 기반의 단일 및 이중 트렌치 게이트 전력 MOSFET의 최적 설계 및 전기적 특성 분석 (The Optimal Design and Electrical Characteritics of 1,700 V Class Double Trench Gate Power MOSFET Based on SiC)

  • 유지연;김동현;이동현;강이구
    • 한국전기전자재료학회논문지
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    • 제36권4호
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    • pp.385-390
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    • 2023
  • In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

확장된 slip-weakening 모델의 응력 강하량과 에너지 수지 특성 및 스케일링 관계 (Characteristics of Stress Drop and Energy Budget from Extended Slip-Weakening Model and Scaling Relationships)

  • 최항;윤병익
    • 한국지진공학회논문집
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    • 제24권6호
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    • pp.253-266
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    • 2020
  • The extended slip-weakening model was investigated by using a compiled set of source-spectrum-related parameters, i.e. seismic moment Mo, S-wave velocity Vs, corner-frequency fc, and source-controlled high-cut frequency fmax, for 113 shallow crustal earthquakes (focal depth less than 25 km, MW 3.0~7.5) that occurred in Japan from 1987 to 2016. The investigation was focused on the characteristics of stress drop, radiation energy-to-seismic moment ratio, radiation efficiency, and fracture energy release rate, Gc. The scaling relationships of those source parameters were also investigated and compared with those in previous studies, which were based on generally used singular models with the dimensionless numbers corresponding to fc given by Brune and Madariaga. The results showed that the stress drop from the singular model with Madariaga's dimensionless number was equivalent to the breakdown stress drop, as well as Brune's effective stress, rather than to static stress drop as has been usually assumed. The scale dependence of stress drop showed a different tendency in accordance with the size category of the earthquakes, which may be divided into small-moderate earthquakes and moderate-large earthquakes by comparing to Mo = 1017~1018 Nm. The scale dependence was quite similar to that shown by Kanamori and Rivera. The scale dependence was not because of a poor dynamic range of recorded signals or missing data as asserted by Ide and Beroza, but rather it was because of the scale dependent Vr-induced local similarity of spectrum as shown in a previous study by the authors. The energy release rate Gc with respect to breakdown distance Dc from the extended slip-weakening model coincided with that given by Ellsworth and Beroza in a study on the rupture nucleation phase; and the empirical relationship given by Abercrombie and Rice can represent the results from the extended slip-weakening model, the results from laboratory stick-slip experiments by Ohnaka, and the results given by Ellsworth and Beroza simultaneously. Also the energy flux into the breakdown zone was well correlated with the breakdown stress drop, ${\tilde{e}}$ and peak slip velocity of the fault faces. Consequently, the investigation results indicate the appropriateness of the extended slip-weakening model.