• Electrical & Electronic Materials
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• v.10 no.5
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• pp.453-460
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• 1997

In order to investigate the electrical conduction properties of polyethylene thin film for power cable with manufacturing methods, the thickness of specimen was the 30, 100[${\mu}{\textrm}{m}$] of LDPE and 200[${\mu}{\textrm}{m}$] of XLPE were manufactured. The experimental condition for conduction properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and the electric field from 1$\times$10$^3$to 5$\times$10$^{6}$ [V/cm]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high electric field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy. At low electric field, the XLPE showed dominant electrical conduction properties by thermal excitation, and transformation of the electron was resisted by the crystal at high electric field.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1362_1363
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• 2009

In this study, we predicted the thermal breakdown of high-voltage interrupter with the characteristics of thermal plasmas such as temperature, pressure and concentration of the ablated material by using a commercial CFD program. The results showed that the pressure build-up inside the chamber was proportional to the magnitude of arcing current because the quantities of heat energy and ablated mass also increase together with the current during the compression process. And during the decompression process, the reverse flow was not coincided with the magnitude of the applied current due to the compressibility of the gas through backflow channel. The present method is expected to be useful for the design of guideline and interruption capacity on the thermal breakdown of a PASB chamber.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.201-207
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• 2010

In this study, we calculated arc discharges happened in high-voltage circuit breakers for understanding the complex physics and the probability of thermal breakdown. The four main parts of arc model for this virtual-reality are radiation, PTFE abaltion, Cu evaporation and turbulence. Among these important parts the turbulence model can be critical to the reliability of computation results during high-current period because the plasma flow is affected by high eat energy and mass momentum. Two kinds of turbulence model, zero-equation model and two-equation model, are applied for these calculations and are compared with the measured pressure data inside a chamber.

• Journal of computational fluids engineering
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• v.15 no.3
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• pp.9-15
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• 2010

In this study, we calculated arc discharges and flow characteristics driven by arcs in a thermal puffer chamber, which is one of most outstanding high-voltage interrupters, for understanding the complex physics and the probability of thermal breakdown. The four main parts of arc model for this virtual-reality are radiation, PTFE ablation, Cu evaporation, and turbulence. Among these important parts the turbulence model can be critical to the reliability of computation results during the whole arcing history because the plasma flow is affected by high heat energy and mass momentum. Two turbulence models, the Prandtl's mixing length model and the standard $k-\varepsilon$ model, are applied for these calculations and are compared with pressure-rise inside chamber and arc voltage between the contacts as well as flow characteristics near current zero.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.143-146
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• 1994

In older to investigate the properties of electric conduction in low density polyethylene(LDPE) for power cable, the thickness of specimen was the 30, 100($\mu\textrm{m}$) of LDPE. The experimental condition for conductive properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and in the electric field of 1 to 5 ${\times}$10$^2$[Mv/m]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Journal of IKEEE
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• v.20 no.2
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• pp.181-183
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• 2016

In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.