• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.262-266
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• 2000

We investigated the effect of the grain size on the photovoltaic current in (Pb$_{1-x}$La$_x$)TiO$_3$ceramics, and the photoinduced domain switching in (Pb$_{0.85}$La$_{0.15}$)TiO$_3$and BaTiO$_3$ceramics. These behaviors in ferroelectric ceramics were attributed to the grain boundary at which photoexcited electrons were trapped. As the charged grain boundary acted as an electro-potential barrier which impeded the movement of electrons, the photovoltaic current showed a peak at a critical grain size. The space charge field built by the electrons trapped at the grain bound-aries was accounted for the photoinduced domain switching, and AE experimental results support well this account.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.1
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• pp.68-78
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• 1997

A numerical study on the transient vapor flow and heat transfer is performed to investigate the ideal switching operation of heat source in a high temperature heat pipe. The cylindrical 2-dimensional compressible laminar vapor flow is assumed for the vapor space and the conjugate heat transfer for the heat pipe wall, wick and vapor space is calculated. The different boundary conditions such as constant heat flux, convective or radiative boundary at the outer wall are used respectively to compare the influence of boundary conditions on the transient operation. The transient temperature profile and the internal flow of the entire pipe for the switching operation are described as a result. The results show that the transient time is not significantly affected by the boundary conditions at the outer wall in present study. During the transition, two independent flows are observed temporarily on the right side and left side of the heat pipe. It is also found that the trend of temperature variation in the vapor region is different from the variation in the wick and wall region.

• Journal of IKEEE
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• v.21 no.4
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• pp.416-419
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• 2017

In this paper, we propose a new digital delay-locked loop (DLL) for high-speed DDR3/DDR4 SDRAMs. The proposed digital DLL adopts a fine delay line using phase interpolation to eliminate the jitter increase problem due to the boundary switching problem. In addition, the proposed digital DLL utilizes a new gradual search algorithm to eliminate the harmonic lock problem. The proposed digital DLL is designed with a 1.1 V, 38-nm CMOS DRAM process and has a frequency operating range of 0.25-2.0 GHz. It has a peak-to-peak jitter of 1.1 ps at 2.0 GHz and has a power consumption of about 13 mW.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.4
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• pp.259-267
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• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.

• Proceedings of the KIEE Conference
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• 1999.07b
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• pp.924-926
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• 1999

To reduce chattering in sliding mode control, a boundary layer around the sliding surface is used, and a continuous control is applied within the boundary. In this paper, a method of determining the sliding mode controller switching gains and the width of boundary layer is presented. Contrary to the trial and error selection of the switching gains and the width of boundary layer, the selection in the presented work is done using genetic algorithms. Simulation results show that the system performance has been improved.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1949-1954
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• 2005

One of control methods for underactuated manipulators is known as a switching control which selects a partially-stable controller using a prespecified switching rule. A switching computed torque control with a fuzzy energy region method was proposed. In this approach, some partly stable controllers are designed by the computed torque method, and a switching rule is based on fuzzy energy regions. Design parameters related to boundary curves of fuzzy energy regions are optimized offline by a genetic algorithm (GA). In this paper, we discuss on parameters obtained by GA. The effectiveness of the switching fuzzy energy method is demonstrated with some simulations.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.138-144
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• 2003

A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.353-353
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• 2014

본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.1
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• pp.80-85
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• 2015

In the issues of interleaved topology which have been in limelight as high power converter, various soft-switching methods are studied to reduce switching losses in high power application. The interleaved ZCT converter has an additional filter inductor to reduce losses of diodes during reverse recovery process. However, additional current conduction modes are occurred by the inductor, we need to analyze switching losses with inductor values on each mode. In this paper, current conduction modes and boundary conditions of interleaved ZCT converter are analyzed. In the conclusion, the minimum of switching losses in converter operation modes is analyzed by calculating switching losses.