• 대한기계학회논문집B
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• 제33권10호
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• pp.820-826
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• 2009

The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.

• 대한기계학회논문집B
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• 제23권10호
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• pp.1340-1346
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• 1999

The turbulent shear flow around a surface-mounted vertical fence was investigated using the two-frame PTV system. The Reynolds number based on the fence height(H) was 2950. From this study, it is revealed that at least 400 instantaneous velocity field data are required for ensemble average to get reliable turbulence statistics, but only 100 field data are sufficient for the time-averaged mean velocity information. Various turbulence statistics such as turbulent intensities, turbulence kinetic energy and Reynolds shear stress were calculated from 700 instantaneous velocity vector fields. The fence flow has an unsteady recirculation region behind the fence, followed by a slow relaxation to the flat-plate boundary layer flow. The time-averaged reattachment length estimated from the streamline distribution is about 11.2H. There exists a region of negative Reynolds shear stress near the fence top due to the highly convex (stabilizing) streamline-curvature of the upstream flow. The large eddy structure in the separated shear layer seems to have significant influence on the development of the separated shear layer and the reattachment process.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Journal of Information Display
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• 제12권4호
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• pp.195-198
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• 2011

Proposed herein is a flexible bistable chiral splay nematic display mode with an enhanced memory retention time under external distortion. By adopting the polymerized reactive-mesogen structure mixed in a liquid crystal layer, local anchoring energy is generated on the boundary between the polymer structures, and the relaxation from the ${\pi}$-twisted state to the initial splay state could be interrupted. As a result, the memory retention time becomes significantly longer, and the stability against the external distortion is enhanced.

• 대한전자공학회논문지
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• 제21권5호
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• pp.90-99
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• 1984

양면에서 텅스텐 램프를 조사하는 실리콘 재결정시의 SOI(silicon-on-insulator) 다층구조에 대한 1차원적 온도 및 열원(열원)의 분포를 SOR(successive over-relaxation)방법을 이용하여 정상상태의 열방정식의 해로부터 구하였다. 열원의 분포는 광원의 스펙트럼, SOI sample 내부 계면에서의 다중반사, 광흡수 계수의 온도, 주파수 의존성 등을 고려하여 구하였으며, 열 방정식의 경계조건이 되는 wafer의 전면과 후면의 온도는 혹체복사 조건으로부터 구하였다. 내부계면에서는 전도열속(conduction heat flux)과 복사열속(radiation heat flux)에 의한 연속조건을 만족하도록 하였다. 본 문제에서의 온도분포와 열원의 분포는 상호간에 큰 영향을 주게 되므로, 두가지 변수가 일치되는 값을 보일 때까지 iteration을 계속하였다. Pyrometer을 이용하여 측정한 wafer 전면의 온도는 약1200°K이었고 이때의 simulation 결과는 1120°K 정도로 나타났다.

• 해양환경안전학회:학술대회논문집
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• 해양환경안전학회 2005년도 추계학술대회지
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• pp.153-158
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• 2005

표면에 부착된 수직벽 후방의 난류전단흐름을 입자영상유속계를 이용하여 조사하였다. 하부 틈새를 갖는 수직벽 후류영역에서는 박리 후 비정상적인(unsteady) 재순환 영역이 형성되었으며, 약 x=3H위치에서 전단층의 재부착 및 난류경계층으로의 재발달 과정이 나타났다. 수직벽 직전의 오목한(concave) 유선곡률과 수직벽 후방의 볼록한(convex)유선곡률의 영향은 수직벽 주위에서 가장 크게 나타나고, 하류로 나아감에 따라 전단층 주위 유체의 유입 등으로 그 영향이 박리 전단층 내에서 커다란 와구조가 연속적으로 발생하였다.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.534-542
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• 1994

Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

• 대한기계학회논문집
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• 제19권1호
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• pp.219-230
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• 1995

The flow characteristics of a two-dimensional offset jet issuing parallel to a rough wall is experimentally investigated by using a split film probe with the modified Stock's calibration method. The mean velocity and turbulent stresses profiles in the up and down-stream locations of the wall-attachment regions are measured and compared with those of the smooth wall attaching offset jet cases. It is found that the wall-attachment region on the rough wall is wider than on the smooth wall for the same offset height and the jet speed. The position of the maximum velocity point is farther away from the wall than that for the smooth wall case because of the thick wall boundary layer established by the surface roughness. It is concluded that the roughness of the wall accelerates the relaxation process to a redeveloped plane wall jet and produces a quite different turbulent diffusion behavior especially near the wall from comparing with the smooth plane wall jet turbulence.

• 대한기계학회논문집
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• 제19권3호
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• pp.834-845
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• 1995

An experimental study is made in a nearly two-dimensional 90.deg. curved duct to investigate the effects of interaction between streamline curvature and mean strain on turbulence. The initial shear at the entrance to the curved duct is varied by an upstream shear generator to produce five different shear conditions ; a uniform flow (UF), a positive weak shear (PW), a positive strong shear(PS), a negative weak shear (NW) and a negative strong shear(NS). With the mean field data of the case UF, variations of the momentum thickness, the shape factor and the skin friction over the convex(inner) surface and the concave (outer) surface are scrutinized quantitatively in-depth. It is found that, while the pressure loss due to curvature is insensitive to the inlet shear rates, the distributions of wall static pressure along both convex and concave surfaces are much influenced by the inlet shear rates.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.215-218
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• 1994

$(Sr_{l-x}{\cdot}Ca_x)_mTiO_3+0.006Nb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.996$N_2$)에서 소결시킨 후 CuO를 시편의 양면에 도포하여 $1100^{\circ}C$에서 2시간동안 열처리함으로써 제작하였다. 결정립의 크기는 Ca의 치환량이 증가함에 따라 촉진되었으나, 20[mol%] 이상 치환시 더 이상 고용되지 못하고 입성장을 억제시켰다. Ca의 치환량이 $10{\sim}15[mol%]$, m=1인 시편에 있어서 우수한 유전특성을 나타내었다. 즉, 비유전율, 유전손실($tan{\delta}[%]$)과 온도변화에 따른 정전용량의 변화율이 각각 >25,000, <0.3[%], <${\pm}10[%]$을 나타내었다. 본 연구에 사용된 모든 시편은 온도의 함수로서 주파수 증가에 따라 유전완화 현상을 나타내었으며, 분산주파수는 $10^6[Hz]$ 이상이었다.