• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.21-29
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• 2016

In this paper, we developed a flexible transparent capacitive pressure sensor which can recognize X and Y coordinates and the size of force simultaneously by sensing a change in electrical capacitance. The flexible transparent capacitive pressure sensor was composed of 3 layers which were top electrode, pressure sensing layer, and bottom electrode. Silver nanowire(Ag NW)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hybrid film was used for top and bottom flexible transparent electrode. The fabricated capacitive pressure sensor had a total size of 5 inch, and was composed of 11 driving line and 19 sensing line channels. The electrical, optical properties of the Ag NW/PEDOT:PSS and capacitive pressure sensor were investigated respectively. The mechanical flexibility was also investigated by bending tests. Ag NW/PEDOT:PSS exhibited the sheet resistance of $44.1{\Omega}/square$, transmittance of 91.1%, and haze of 1.35%. Notably, the Ag NW/PEDOT:PSS hybrid electrode had a constant resistance change within a bending radius of 3 mm. The bending fatigue tests showed that the Ag NW/PEDOT:PSS could withstand 200,000 bending cycles which indicated the superior flexibility and durability of the hybrid electrode. The flexible transparent capacitive pressure sensor showed the transmittance of 84.1%, and haze of 3.56%. When the capacitive pressure sensor was pressed with the multiple 2 mm-diameter tips, it can well detect the force depending on the applied pressure. This indicated that the capacitive pressure sensor is a promising scheme for next generation flexible transparent touch screens which can provide multi-tasking capabilities through simultaneous multi-touch and multi-force sensing.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• 한국지구물리탐사학회:학술대회논문집
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• 2002.09a
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• pp.139-162
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• 2002

Since weak zones or geological lineaments are likely to be eroded, weak zones may develop beneath rivers, and a careful evaluation of ground condition is important to construct structures passing through a river. Dc resistivity surveys, however, have seldomly applied to the investigation of water-covered area, possibly because of difficulties in data aquisition and interpretation. The data aquisition having high quality may be the most important factor, and is more difficult than that in land survey, due to the water layer overlying the underground structure to be imaged. Through the numerical modeling and the analysis of case histories, we studied the method of resistivity survey at the water-covered area, starting from the characteristics of measured data, via data acquisition method, to the interpretation method. We unfolded our discussion according to the installed locations of electrodes, ie., floating them on the water surface, and installing at the water bottom, since the methods of data acquisition and interpretation vary depending on the electrode location. Through this study, we could confirm that the dc resistivity method can provide the fairly reasonable subsurface images. It was also shown that installing electrodes at the water bottom can give the subsurface image with much higher resolution than floating them on the water surface. Since the data acquired at the water-covered area have much lower sensitivity to the underground structure than those at the land, and can be contaminated by the higher noise, such as streaming potential, it would be very important to select the acquisition method and electrode array being able to provide the higher signal-to-noise ratio data as well as the high resolving power. The method installing electrodes at the water bottom is suitable to the detailed survey because of much higher resolving power, whereas the method floating them, especially streamer dc resistivity survey, is to the reconnaissance survey owing of very high speed of field work.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.6 s.183
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• pp.166-173
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• 2006

In this study, a probe array has been developed for use in a data storage device that is based on scanning probe microscope (SPM) and MEMS technology. When recording data bits by poling the PZT thin layer and reading them by sensing its piezoresponse, commercial probes of which the tip heights are typically shorter than $3{\mu}m$ raise a problem due to the electrostatic forces occurring between the probe body and the bottom electrode of a medium. In order to reduce this undesirable effect, a poly-silicon probe with a high aspect-ratio tip was fabricated using a molding technique. Poly-silicon probes fabricated by the molding technique have several features. The tip can be protected during the subsequent fabrication processes and have a high aspect ratio. The tip radius can be as small as 15 nm because sharpening oxidation process is allowed. To drive the probe, electrostatic actuation mechanism was employed since the fabrication process and driving/sensing circuit is very simple. The natural frequency and DC sensitivity of a fabricated probe were measured to be 18.75 kHz and 16.7 nm/V, respectively. The step response characteristic was investigated as well. Overshoot behavior in the probe movement was hardly observed because of large squeeze film air damping forces. Therefore, the probe fabricated in this study is considered to be very useful in probe-based data storages since it can stably approach toward the medium and be more robust against external shock.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.509-514
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• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Geophysics and Geophysical Exploration
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• v.8 no.1
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• pp.50-58
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• 2005

Recently, the imaging of geological structures beneath water-covered areas has been in great demand because of numerous tunnel and bridge construction projects on river or lake sites. An electrical resistivity survey can be effective in such a situation because it provides a subsurface image of faults or weak zones beneath the water layer. Even though conventional resistivity surveys in water-covered areas, in which electrodes are installed on the water bottom, do give high-resolution subsurface images, much time and effort is required to install electrodes. Therefore, an easier and more convenient method is sought to find the strike direction of the main zones of weakness, especially for reconnaissance surveys. In this paper, we investigate the applicability of the streamer resistivity survey method, which uses electrodes in a streamer cable towed by ship or boat, for delineating a fault zone. We do this through numerical experiments with models of water-covered areas. We demonstrate that the fault zone can be imaged, not only by installing electrodes on the water bottom, but also by using floating electrodes, when the depth of water is less than twice the electrode spacing. In addition, we compare the signal-to-noise ratio and resolving power of four kinds of electrode arrays that can be adapted to the streamer resistivity method. Following this numerical study, we carried out both conventional and streamer resistivity surveys for the planned tunnel construction site located at the Han River in Seoul, Korea. To obtain high-resolution resistivity images we used the conventional method, and installed electrodes on the water bottom along the planned route of the tunnel beneath the river. Applying a two-dimensional inversion scheme to the measured data, we found three distinctive low-resistivity anomalies, which we interpreted as associated with fault zones. To determine the strike direction of these three fault zones, we used the quick and convenient streamer resistivity.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.33-42
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• 2009

A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.99-104
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• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.