• Bulletin of the Korean Mathematical Society
• /
• v.50 no.5
• /
• pp.1441-1450
• /
• 2013

In this paper, we consider two-component Bose-Einstein condensates with an internal atomic Josephson junction in the general case, i.e., 0 < p < $\frac{2}{(d-2)^+}$. We prove existence and uniqueness results for the ground states, and obtain some properties of the ground states with large parameters.

• Journal of the Korean Vacuum Society
• /
• v.19 no.5
• /
• pp.353-359
• /
• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.