• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Carbon letters
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• 제11권4호
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• pp.332-335
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• 2010

The photodegradation of the model compounds Quinol, an aromatic organic compound and Acid blue FFS, an acid dye of chemical class Triphenylmethane was studied by using illumination with UV lamp of light intensity 250W. $TiO_2$ and $TiO_2$ doped with Boron and Nitrogen was used as catalyst. The sol-gel method was followed with titanium isopropoxide as precursor and doping was done using Boron and Nitrogen. In photocatalytic degradation, $TiO_2$ and doped $TiO_2$ dosage, UV illumination time and initial concentration of the compounds were changed and examined in order to determine the optimal experimental conditions. Operational time was optimized for 360 min. The optimum dosage of $TiO_2$ and BN doped $TiO_2$ was obtained to be 2 $mgL^{-1}$ and 2.5 $mgL^{-1}$ respectively. Maximum degradation % for quinol and Blue FFS acid dye was 78 and 95 respectively, at the optimum dosage of BN-doped $TiO_2$ catalyst. It was 10 and 4% higher than when undoped $TiO_2$ catalyst was used.

• 한국재료학회지
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• 제28권9호
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• pp.495-498
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• 2018

Intermetallic compound matrix composites have been expected to be established as high temperature structural components. $Ni_3Al$ is a representative intermetallic alloy, which has excellent ductility even at room temperature by adding certain alloying elements. $Ni_3Al$ matrix composites with aluminum oxide particles, which are formed by the in-situ reaction between the alloy and aluminum borate whiskers, are fabricated by a powder metallurgical method. The addition of aluminum borate whiskers disperses the synthetic aluminum oxide particles during sintering and dramatically increases the strength of the composite. The uniform dispersion of reaction synthesized aluminum oxide particles and the uniform solution of boron in the matrix seem to play an important role in the improvement in strength. There is a dramatic increase in strength with the addition of the whisker, and the maximum value is obtained at a 10 vol% addition of whisker. The $Ni_3Al$ composite with 10 vol% aluminum oxide particles $0.3{\mu}m$ in size and with 0.1 wt% boron powder fabricated by the conventional powder metallurgical process does not have such high strength because of inhomogeneous distribution of aluminum oxide particles and of boron. The tensile strength of the $Ni_3Al$ with a 10 vol% aluminum borate whisker reaches more than twice the value, 930 MPa, of the parent alloy. No third phase is observed between the aluminum oxide and the matrix.

• 열처리공학회지
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• 제34권3호
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• pp.107-115
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• 2021

Al-Si coated boron steel has been widely used as commercial hot stamping steel. When the steel is heated at 900~930℃ for 5 min in an electric furnace, thickness of the coating layer increases as a consequence of formation of intermetallic compounds and diffusion layer. The diffusion layer plays an important roll in blunting the propagation of crack from coating layer to base steel. Change in microstructure and coating layer of Al-Si coated boron steel after conductive heating with higher heating rate than electric furnace has been investigated in this study. Conductive-heated steel showed the martensitic structure with vickers hardness of 505~567. Both intermetallic compounds in coating layer and diffusion layer were not observed in conductive-heated steel due to rapid heating. It has been found that the conductive-heating consisting of rapid heating to 550℃ which is lower than melting point of Al-Si coating layer, slower heating to 900℃, and then 1 min holding at 900℃ is effective in forming intermetallic compound in coating layer and diffusion layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.620-622
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• 2004

In this study, a mono-chelated compound as novel blue light emitting material, $BPh_2$(pbi) (pbi = 2-(2-Pyridyl)benzimidazole) was synthesized Organic light emitting Diodes (OLEDs), which has a ITO/NPB(40 nm)/Boron(30 nm)/$Alq_3$(1 nm)/Liq(3 nm)/Al(150 nm) structure, has been fabricated. The maximum brightness of the device is up to about 900 cd/$m^2$ and 0.54 cd/A at 11.5 V. The EL peaks and CIE coordinates of our OLEDs is 457 nm and (0.26, 0.29), respectively.

• 전기학회논문지
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• 제61권1호
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• pp.89-93
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• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• 공업화학
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• 제29권4호
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• pp.413-418
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• 2018

붕산, 5붕산암모늄, 붕산/5붕산암모늄 첨가제로 처리한 편백목재 시험편의 연소가스 발생에 관한 시험을 하였다. 4 wt%의 붕소 화합물 수용액으로 각각 편백목재 시험편에 붓으로 3회 칠하였다. 실온에서 건조시킨 후, 콘칼로리미터(ISO 5660-1)를 이용하여 연소가스를 분석하였다. 그 결과, 붕소 화합물로 처리한 시험편의 두 번째_최대산소 소모율은 0.1067~0.1246 g/s로서 공시험편보다 5.3~18.9% 감소했다. 붕산, 5붕산암모늄으로 처리한 시험편의 비소화면적은 2.0~19.0% 감소하였다. 그러나, 붕산/5붕산암모늄으로 처리된 경우 비감쇠면적이 공시험편보다 21.2% 증가하였다. 붕소 화합물로 처리한 시험편의 최대일산화탄소 농도는 0~25% 감소되었다. 이것은 직업안전위생관리국(Occupational Safety and Health Administration, OSHA) 허용기준의 1.6~2.2배의 치명적인 독성을 발생하는 것으로 측정되었다. 붕소화합물은 일산화탄소 감소에는 효과적이었으나 OSHA의 허용기준에는 미치지 못하였다. 붕소화합물은 편백나무의 연소성을 두 번째_최대산소 소모율에 대하여 5.3~18.9%, 최대일산화탄소 발생에 대하여 0~25% 억제하였다.

• Journal of the Korean Wood Science and Technology
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• 제48권3호
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• pp.315-325
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• 2020

Boron compound had many advantages as wood preservative, but it was prone to leaching. Improving boron preservation was required to extend the service life of fast growing and low durability red jabon (Antochephalus macrophyllus) hardwood. This study aimed to evaluate the dimensional stability, color change and durability of modified red jabon wood by double impregnation with boron and methyl methacrylate (MMA) and heat treatment. Impregnation I used boric acid or borax, and impregnation II used MMA, while heat treatment used temperatures of 90 ℃ or 180 ℃ for 4 hours. The dimensional stability, leachability, water absorption, color change and decay resistance of modified red jabon wood were tested. The results showed that MMA impregnation increased the dimensional stability of red jabon wood, while the leaching and water absorption in the wood significantly reduced. Heating at 180 ℃ caused less water absorption and higher dimensional stability of the wood than that of heating at 90 ℃. Impregnation with boric acid and MMA followed by heating at 90 ℃ resulted in the highest wood ASE, 89.9%. The color change (∆E^*) of wood increased significantly after MMA impregnation and heating at 180 ℃. Boric acid impregnation caused more resistant wood than borax impregnation against decay fungi and termites. Impregnation with boric acid and MMA followed with heating at 180 ℃ increased significantly the wood resistance against decay fungi and termites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.