• Journal of Korea Foundry Society
• /
• v.9 no.4
• /
• pp.311-319
• /
• 1989

The effects of the alloying elements and cooling rates on the formation of phosphide eutectics of compacted vermicular graphite cast irons containing copper, tin, molybdenum for producing pearlitic matrix, and also containing phosphorus and boron for increasing wear resistance, were investigated. The liquidus phosphide eutectic was found to solidify as a pseudo-binary phosphide eutectic, but with increasing of the cooling rate non-equlibrium phosphide eutectic with needle type carbide could be formed. However, the liquidus phosphide eutectic containing both phosphorus and carbide-forming boron was found to solidify always as a non-equlibrium phosphide eutectic with coarse carbide, independent from the cooling rate. It was also confirmed that the tiny isolated phase observed by SEM was gamma iron solid solution with phosphorus, silicon, molybdenum and the matrix containing these tiny islands was phosphide phase containing manganese and molybdenum. The addition of copper was found to decrease the tendency of forming ledeburitic carbides in the phosphide eutectic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.27-30
• /
• 2002

Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.165-166
• /
• 2006

Boron phosphide thin films were prepared on the glass substrate from boron and phosphorous alkoxide precursors by sol-gel processing. Boron phosphide sol with equivalent ratio $(CH_3O_3)B$ : $C_{18}H_{15}P$ = 13 : 2 was selected. Films spin-coated at 4000 rpm for 30 s were coated uniformly. Decomposition and crystallization behavior were examined using DSC/TGA and XRD. The films were sintered at 250, 300 and $400^{\circ}C$. It was determined that crystal structure has a rhombohedral phase. The microstructure of thin film was observed using SEM. Thin films approximately showed a visible ray transmittance of 85 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.332-335
• /
• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.294-297
• /
• 2000

Boron Phosphide films were deposited on the glass substrate at low temperature, 550$^{\circ}C$, by the reaction of B$_2$H$\sub$6/ with PH$_3$ using CVD. N$_2$ was employed as carrier gas. The deposition rate was 1000${\AA}$/min and the refractive index of film was 2.6. The data of XRD show that the film has the preferred orientation of (1 0 1). The VIS spectrophotometer's data proved that the films are transparent in the visible range. Also, we performed AFM, FT-IR measurement. To investigate the annealing effect, the samples were annealed for 1hour, 3hours at 550$^{\circ}C$ and tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.103-107
• /
• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.243-246
• /
• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.88-90
• /
• 2005

Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

• Journal of Korea Foundry Society
• /
• v.13 no.4
• /
• pp.333-341
• /
• 1993

The effects of alloying elements on the structure and mechanical properties of compacted/vermicular graphite cast irons containing copper, tin and molubdenum for producing pearlite matrix, and also containing phosphorus and boron for increasing wear resistance, were investigated. The Brinell hardness and ultimate tensile strength of the specimens with the range of compositions, [1.5% Cu-0.05% Sn-(0.2-0.4)% Mo-(0.2-0.6)% P-(0.035-0.070)% B], was found to fall within in the following range, depending on their composition; Brinell hardness of BHN 250-315, ultimate tensile strength of $28.1-40.3kg/mm^2$. It was also found within this experiment that CV graphite cast irons possessing higher amount of phosphide eutectic exhibit better wear resistance, but the wear resistance became deteriorate when the area fraction of phosphide eutectics exceed more than 10%. From these experimental results, it could be concluded that the CV graphite cast iron containing 1.5% Cu, 0.05% Sn, 0.4% Mo, 0.2% P and 0.035% B showed good mechanical and wear resistance properties.

• Journal of Korea Foundry Society
• /
• v.15 no.6
• /
• pp.546-557
• /
• 1995

This study was undertaken to obtain an improved understanding of the effects of alloying elements on the residual amounts of Mg in the melt and on the resultant microstructure of compacted vermicular graphite cast irons, and the influence of alloying elements and cooling rates during solidification on the formation of phosphide eutectics, and on the mechanical properties of compacted vermicular graphite cast irons containing copper, tin, molybdenum for producing pearlitic matrix, and also containing phosphorus and boron for increasing wear resistance were evaluated.