• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 하계학술연구발표회 논문개요집
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• pp.92-93
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• 2004

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.43-43
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• 2013

붕화질소(hexagonal Boron Nitride, h-BN)위의 그래핀은 산화규소(SiO2) 위에 전사된 그래핀에 비해서 월등한 전기적 특성을 갖는다. 따라서 전자소자의 산업적 응용을 위한 대면적화를 위하여, 그래핀을 붕화질소위에 화학증기증착(CVD) 방법을 통해 직성장시키고, 그 전기적 성질이 산화규소 및 suspended된 그래핀에 비해서 훨씬 더 이상적임을 원자 수준의 공간해상도에서 초고진공 저온 주사형 터널링 현미경(scanning tunneling microscope, STM)을 통해 입증하였다.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.19-21
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.53.1-53.1
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• 2010

결정질 실리콘 태양전지의 효율을 향상시키기 위하여 수광면에 서로 다른 도핑농도를 가지는 고농도 도핑영역과 저농도 도핑영역으로 이루어진 emitter를 형성하는 것이 요구되며 이를 selective emitter라 칭한다. Selective emitter를 형성하면 고농도 도핑영역에서 금속전극과 저항 접촉이 잘 형성되기 때문에 직렬 저항이 최소화되고 저농도 도핑영역에서는 전하 재결합의 감소로 인하여 태양전지의 변환효율이 상승하는 이점이 있다. Selective emitter의 형성방법은 이미 다양한 방법이 제안되고 있으나, 본 연구에서는 기존에 제시된 방법과는 다르게 열산화 시 dopant redistribution에 의한 Boron depletion 현상을 이용하여 selective emitter를 형성하는 방법을 제안하였고, 이를 Simulation을 통하여 검증하였다. 초기 emitter 확산 후 junction depth는 0.478um, 면저항은 $104.2{\Omega}/sq.$ 이었으며, nitride masking layer 두께는 0.3um로 설정하였다. $1100^{\circ}C$에서 30분간 습식산화 공정을 거친 후 nitride mask가 있는 부분의 junction depth는 1.48um, 면저항은 $89.1{\Omega}/sq$의 값을 보였고, 산화막이 형성된 부분의 junction depth는 1.16um, 면저항은 $261.8{\Omega}/sq$의 값을 보였다. 위 조건의 구조를 가진 태양전지의 변환 효율은 19.28%의 값을 나타내었고 Voc, Jsc 및 fill factor는 각각 645.08mV, $36.26mA/cm^2$, 82.42%의 값을 보였다. 한편 일반적인 구조로 설정한 태양전지의 변환 효율, Voc, Isc 및 fill factor는 각각 18.73%, 644.86mV, $36.26mA/cm^2$, 80.09%의 값을 보였다.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.373-379
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• 2020

In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiO_x was uniformly coated on the surface of cBN powder particles. The obtained TiO_x-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N₂-5%H₂ mixed gas. With increasing temperature, the chemical composition of the TiO_x coating layer changed in the order of TiO₂→Ti₆O₁₁→Ti₄O₇→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

• Composites Research
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• 제32권6호
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• pp.319-326
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• 2019

본 연구에서는 재활용이 가능하며 열가소성 특성을 지닌 신규 고분자 수지를 개발하고 합성하였다. 이렇게 개발된 수지와 판상형 질화붕소(h-BN) 사이의 계면 친화성이 좋음을 계산과학을 통하여 확인하고 열압기(hot press)를 이용하여 복합소재를 제조하였다. 고분자 수지와 필러 사이의 계면 친화성과 함께 복합소재 제조시 발생되는 전단력(shear force) 만으로도 매우 높은 필러 정렬도를 지닌 복합소재를 제조할 수 있었고, 이러한 이유로 복합소재는 최대 13.8 W/mK의 높은 열전도도를 갖는 것을 확인하였다. 또한, 개발된 수지가 화학적으로 분해 가능한 장점을 이용하여 제조된 복합소재로부터 물리/화학적 변성 없이 필러를 회수할 수 있었고 이렇게 회수된 필러는 향후 다양한 신규 복합소재 제조에 재활용이 가능하다.

• Elastomers and Composites
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• 제52권2호
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• pp.136-142
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• 2017

Using various compositions of thermally conductive inorganic fillers with boron nitride (BN) and aluminum oxide ($Al_2O_3$), solventless UV-curable thermally conductive acrylic pressure sensitive adhesives (PSAs) were prepared. The base of the PSAs consists of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and isobornyl acrylate.The compositions of the thermally conductive inorganic fillers were 10, 15, 20, and 25 phr in case of BN, and 20:0, 15:5, 10:10, 5:15, and 0:20 phr in case of $BN/Al_2O_3$. The adhesion properties like peel strength, shear strength, and probe tack, and the thermal conductivity of the prepared PSAs were investigated with different thermally conductive inorganic filler contents. There were no significant changes in photo-polymerization behavior with increasing BN or $BN/Al_2O_3$ content. Meanwhile, the conversion rate and transmittance of the PSAs decreased and their thermal stabilities increased with increasing BN content. Their adhesion properties were also independent of the BN or $BN/Al_2O_3$ content. The dispersibility of BN in the acrylic PSAs was better than that of $Al_2O_3$ and it ranked the thermal conductivity in the following order: BN > $BN/Al_2O_3$ > $Al_2O_3$.

• Structural Engineering and Mechanics
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• 제65권4호
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• pp.491-504
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• 2018

Because of sandwich structures with low weight and high stiffness have much usage in various industries such as civil and aerospace engineering, in this article, buckling and free vibration analyses of coupled micro composite sandwich plates are investigated based on sinusoidal shear deformation (SSDT) and most general strain gradient theories (MGSGT). It is assumed that the sandwich structure rested on an orthotropic elastic foundation and make of four composite face sheets with temperature-dependent material properties that they reinforced by carbon and boron nitride nanotubes and two flexible transversely orthotropic cores. Mathematical formulation is presented using Hamilton's principle and governing equations of motions are derived based on energy approach and applying variation method for simply supported edges under electro-magneto-thermo-mechanical, axial buckling and pre-stresses loadings. In order to predict the effects of various parameters such as material length scale parameter, length to width ratio, length to thickness ratio, thickness of face sheets to core thickness ratio, nanotubes volume fraction, pre-stress load and orthotropic elastic medium on the natural frequencies and critical buckling load of double-bonded micro composite sandwich plates. It is found that orthotropic elastic medium has a special role on the system stability and increasing Winkler and Pasternak constants lead to enhance the natural frequency and critical buckling load of micro plates, while decrease natural frequency and critical buckling load with increasing temperature changes. Also, it is showed that pre-stresses due to help the axial buckling load causes that delay the buckling phenomenon. Moreover, it is concluded that the sandwich structures with orthotropic cores have high stiffness, but because they are not economical, thus it is necessary the sandwich plates reinforce by carbon or boron nitride nanotubes specially, because these nanotubes have important thermal and mechanical properties in comparison of the other reinforcement.

• 한국표면공학회지
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• 제46권4호
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• pp.139-144
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• 2013

c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.