• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Journal of the Korean institute of surface engineering
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• v.51 no.5
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• pp.332-336
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• 2018

Alkaline oxygen electrocatalysis, targeting anion exchange membrane alkaline-based metal-air batteries has become a subject of intensive investigation because of its advantages compared to its acidic counterparts in reaction kinetics and materials stability. However, significant breakthroughs in the design and synthesis of efficient oxygen reduction catalysts from earth-abundant elements instead of precious metals in alkaline media still remain in high demand. One of the most inexpensive alternatives is carbonaceous materials, which have attracted extensive attention either as catalyst supports or as metal-free cathode catalysts for oxygen reduction. Also, carbon composite materials have been recognized as the most promising because of their reasonable balance between catalytic activity, durability, and cost. In particular, heteroatom (e.g., N, B, S or P) doping on carbon materials can tune the electronic and geometric properties of carbon, providing more active sites and enhancing the interaction between carbon structure and active sites. Here, we focused on boron and nitrogen doped nanocarbon composit (BNC nanocarbon) catalysts synthesized by a solution plasma process using the simple precursor of pyridine and boric acid without further annealing process. Additionally, guidance for rational design and synthesis of alkaline ORR catalysts with improved activity is also presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.616-621
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• 2022

Numerical simulation is a good way to predict the conversion efficiency of solar cells without a direct experimentation and to achieve low cost and high efficiency through optimizing each step of solar cell fabrication. TOPCon industrial solar cells fabricated with n-type silicon wafers on a larger area have achieved a higher efficiency than p-type TOPCon solar cells. Electrical and optical losses of the front surface are the main factors limiting the efficiency of the solar cell. In this work, an optimization of boron-doped emitter surface and front electrodes through numerical simulation using "Griddler" is reported. Through the analysis of the results of simulation, it was confirmed that the emitter sheet resistance of 150 Ω/sq along the front electrodes having a finger width of 20 ㎛, and the number of finger lines ~130 for silicon wafer of M6 size is an optimized technology for the front emitter surface of the n-type TOPCon solar cells that can be developed.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of the Korean Electrochemical Society
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• v.24 no.3
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• pp.52-64
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• 2021

The effect of Fe and BO₃ doping on structure, thermal, and electrical properties of Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y (x = 0.2, 0.5)-based glass and glass ceramics was investigated. In addition, their crystallization behavior during sintering and ionic conductivity were also investigated in terms of sintering temperature. FT-IR and XPS results indicated that Fe²⁺ and Fe³⁺ ions in Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y glass worked as a network modifier (FeO₆ octahedra) and also as a network former (FeO₄ tetrahedra). In the case of the glass with low substitution of BO₃, boron formed (PB)O₄ network structure, while boron preferred BO₃ triangles or B₃O₃ boroxol rings with increasing the BO₃ content owing to boic oxide anomaly, which can result in an increased non-bridging oxygen. The glass transition temperature (GTT) and crystallization temperature (CT) was lowered as the BO₃ substitution was increased, while Fe²⁺ lowered the GTT and raised the CT. The ionic conductivity of Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y glass ceramics were 8.85×10^-4 and 1.38×10^-4S/cm for x = 0.2 and 0.5, respectively. The oxidation state of doped Fe and boric oxide anomaly were due to the enhanced lithium ion conductivity of glass ceramics.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.67-73
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• 2012

Spherical lithium manganese oxide spinel, $LiMn_{2-x}M_xO_4$ (M = Al, Mg, B) prepared by wet-milling, spray-drying, and sintering process has been investigated as a cathode material for lithium ion batteries. As-prepared powders exhibit various surface morphologies and internal density in terms of boron (B) doping level. It is found that the dopant B drives the growth of the primary particle and minimizes the surface area of the powder. As a result, the dopant enhances the internal density of the particles. Electrochemical tests demonstrated that the capacity of the synthesized material at 5 C could be maintained up to 90% of that at 0.2 C. The cycle performance of the material showed that the initial capacity was retained up to 80% even after 500 cycles under the high temperature of $60^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.61-67
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• 1996

The growth and characterization of heteroepitaxial $Si_{1-x}Ge_{x}$ films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of $Si_{1-x}Ge_{x}$ heteroepitaxial layers, $SiH_{4}$ / $GeH_{4}$ / $H_{2}$ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in $Si_{1-x}Ge_{x}$ / Si heteroepitaxial film of about $400\;{\AA}$ thickness was not observed at the growth temperature of as low as $650^{\circ}C$, and the composition ratios of Si / Ge changed linearly with $SiH_{4}$ / $GeH_{4}$ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds ${\AA}$/decade.

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.29-34
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• 2005

The degradation of the SiGe hetero-junction bipolar transistor(HBT) properties in SiGe BiCMOS process was investigated in this paper. The SiGe HBT prepaired by SiGe BiCMOS process, unlike the conventional one, showed the degraded DC characteristics such as the decreased Early voltage, the decreased collector-emitter breakdown voltage, and the highly increased base leakage current. Also, the cutoff frequency(f/sub T/) and the maximum oscillation frequency(f/sub max/) representing the AC characteristics are reduced to below 50%. These deteriorations are originated from the change of the locations of emitter-base and collector-base junctions, which is induced by the variation of the doping profile of boron in the SiGe base due to the high-temperature source-drain annealing. In the result, the junctions pushed out of SiGe region caused the parastic barrier formation and the current gain decrease on the SiGe HBT device.

• New & Renewable Energy
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• v.3 no.4
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• pp.63-68
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• 2007

유리를 기판으로 하는 superstrate pin 비정질 실리콘 태양전진에서 전면 투명전도막(TCO)과 p-층의 계면은 태양전지 변환효율에 큰 영향을 미친다. 면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$보다 전기, 광학적으로 우수하고, 안개율 (Haze)높으며, 수소 플라즈마에서 안정성이 높은 특징을 갖고 있다. 그래서 박막 태양전지의 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2$보다 충진율(Fill Factor:F.F)과 $V_{oc}$가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$dml F.F.가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer에 $R=(H_2/SiH_4)=25$로 변화, p ${\mu}c$-Si:H/p a-SiC:H로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu}c$-Si:H/p a-SiC:H 인 p-layer 이중 증착에서 $V_{oc}$는 0.95V F.F는 70%이상이 나왔다. 이들 각 p층의 $E_a$(Activiation Energy)를 구해본 결과, ${\mu}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.