• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.319-324
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• 1999

기존의 고상 반응법에 의해 합성된 YNbO4 : Bi 형광체의 발광특성을 개선하기 위하여 B2O3 융체 첨가법으로 형광체를 합성하고, 빛발광(PL) 및 저전압 음극선발광(CL)을 측정하였다. PL 및 CL 모두 415~440 nm 영역에서 강한 청색 발광 스펙트럼을 나타냈으며, 고상 반응의 경우와 마찬가지로 Y/Nb 비율이 화학 양론상의 1:1인 경우보다 결함구조를 인위적으로 조절한 51/49나 54/46에서 최대의 발광강도를 보였다. 한편, 고상 반응에서는 125$0^{\circ}C$에서 4시간 열처리하는 것이 최대의 발광효과를 나타냈으나, B2O3융제를 첨가하고 110$0^{\circ}C$에서 열처리한 시료가 결정성이 좋고 입자의 크기 및 형태가 균일하여 PL뿐만 아니라 CL에서도 우수한 발광특성을 보였다. B2O3융제를 첨가하는 방법으로 열처리 온도를 낮추고 입자크기와 형태를 조절하여 형광체의 휘도를 개선할 수 있었다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.161-164
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• 1997

Thin films of CdS were prepared from an aqueous solution containing Cd(Ac)$_2$, NH$_4$OH, NH$_4$Ac and (NH$_2$)$_2$CS for photovoltaic application. Growth rate of CdS films was increased with increasing temperature of reactive solution and with decreasing concentration of NH$_4$OH. Optical transmittances were more than 60%, independent with temperature and concentrations, and were changed with thickness of CdS films. Growth films mostly showed the presence of polycrystallines with mixed cubic and condition. The resistivities of CdS were decreased by doping boron and criticial amount of dopant was determined.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.264-267
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• 2008

Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.729-735
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• 1991

To form shallow $p^+$ -n junctions, Ge and As ions were employed for preamorphization, and B or BF2 was implanted for doping. Same B and BF$_2$ implantations were performed into single crystalline silicon to compare the material and electrical characteristics with the preamorphized samples. SIMS measurements for 10KeV B implanted samples revealed the somilar boron distribution for two preamophized cases, but the ASR profiles indicated that the shallower junctions could be formed by Ge preamorphzation. Sheet resostance of Ge preamorphized sample was lower than the As preamorphized sample, and the diode leakage current characteristics were similar for the preamorphized and non-preamorphized samples. Among the samples implanted with BF ions into the substrates preamorphized with 25keV Ge or As ions, high sheet resistance and leaky diode characteristics were observed for the As preamorphized samples. It was found that Ge preamorphization is more useful than As preamorphization for the purpose of forming shallow $p^+$ -n junctions using low energy BF$_2$ implantation.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.5
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• pp.339-342
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• 2005

In long-period fiber grating (LPFG) to be made up optical fiber sensors, resonance coupling occurs between the forward-propagating core mode and cladding modes at the wavelength that satisfy the Phase matching condition. The resonance wavelength and the coupling strength depends strongly on the external environment like temperature, strain, and ambient index. These characteristics can be utilized for various applications as optical fiber sensors. fabrication of optical fiber gratings is typically based on the photosensitivity effect, i.e. the permanent change of the refractive index upon irradiation of the UV beam, and therefore, fabrication of the optical fiber with high phososensitivity is an important part of the research on optical fiber gratings. In this work, we measured the effort of to-doping of boron on the index difference between the core and cladding of the optical fiber and the sensitivity of the LPFC to the temperature and bending changes. We observed that the index difference between the core and the cladding decreased by $(1.69{\times}10^{-4}/SCCM)$ and the temperature sensitivity of the resonance wavelength shirt decreased by $(0.01145nm/^{\circ}C/SCCM)$. The dependence or the bending-induced changes or the transmission characteristics of LPFG on the tore-cladding index difference was investigated experimentally. The measurement results indicate that the bending sensitivity increases as the index difference decreases.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.211-216
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• 2010

Boron trifluoride lithium methacrylate ($BF_3$LiMA)-based gel polymer electrolytes (GPEs) were synthesized with various $BF_3$LiMA concentration to elucidate the effect on ionic conductivity and electrochemical stability by a AC impedance and linear sweep voltammetry (LSV). As a result, the highest ionic conductivity reached $5.3{\times}10^{-4}Scm^{-1}$ at $25^{\circ}C$ was obtained for 4 wt% of $BF_3$LiMA. Furthermore, high electrochemical stability up to 4.3 V of the $BF_3$LiMA-based GPE was observed in LSV measurement since the counter anion was immobilized in this self-doped system. On the other hand, it was assumed that there was a rapid decomposition of electrolytes on a lithium metal electrode which results in a high solid electrolyte interface (SEI) resistance. However, a high stability toward graphite or lithium cobalt oxide (LCO) electrode thereby a low SEI resistance was observed from the AC impedance measurement as a function of storage time at $25^{\circ}C$. Consequently, the high ionic conductivity, good electrochemical stability and the good interfacial compatibility with graphite and LCO were achieved in $BF_3$LiMA-based GPE.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.694-696
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• 2010

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as $200{\mu}m$ in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.47-50
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• 2017

Carbon is proven to be very effective in pinning the magnetic vortices and improving the superconducting performance of $MgB_2$ at high fields. In this work, we have used polymethyl methacrylate (PMMA) polymer as a safe and cost effective carbon source. The effects of molecular weight of PMMA on crystal structure, microstructure as well as on superconducting properties of $MgB_2$ were studied. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for $MgB_2$ doped with different molecular weights of PMMA. This indicates that carbon could be substituted in the boron honeycomb layers without affecting the interlayer interactions. As compared to undoped $MgB_2$, substantial enhancement in $J_c(H)$ properties was obtained for PMMA-doped $MgB_2$ samples both at 5 K and 20 K. The enhancement could be attributed to the effective carbon substitution for boron and the refinement of crystallite size by PMMA doping.