• Title/Summary/Keyword: Boron 이온주입기술

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Analysis of one- and two-dimensional boron distribution in implanted $BF_2$ silicon (실리콘에 $BF_2$로 이온주입후에 Boron 이온의 일차원 및 이차원적인 분포해석)

  • Jung, Won-Chae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.99-100
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    • 2006
  • $BF_2$ molecule 이온주입은 ULSI기술에 있어서 ultra shallow 정합형성을 위해고 P-MOS를 제작하는데 매우 유용한 기술이다. 주입된 boron 이온의 분포를 위해서 $0.05{\mu}m$ 나노스케일의 마스크사이즈의 패턴에 이온 주입한 결과를 일차원적인 분포해석을 위해서 UT-Marlowe tool을 사용하여 gauss 및 pearson 모델의 도핑분포를 나타내었다. 또한 이 데이터를 TSUPREM4에 적용하여 이차원적인 도핑분포와 열처리 후에 boron의 gauss 및 pearson의 모델의 도핑분포를 본 논문에 나타내었다.

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Fabrication and Characterization of 5000V class 4-inch Light Triggered Thyristor (4인치 광점호 Thyristor의 제조 및 특성 분석에 대한 연구)

  • Cho, Doohyung;Won, Jongil;Yoo, Seongwook;Ko, Sangchoon;Park, Jongmoon;Lee, Byungha;Bae, Youngseok;Koo, Insu;Park, Kunsik
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.230-232
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    • 2019
  • Light Triggerd Thyristor (LTT)는 HVDC 및 산업용 스위치 등에 사용되는 대전력 반도체소자이다. 일반적인 Thyristor가 전기적 신호에 의해 trigger 되는 것과는 다르게 LTT는 광신호에 의해 동작하는 소자이다. 본 논문에서는 5,000V, 2,200A 급의 4인치 LTT 소자의 제작 및 전기적인 특성평가 결과를 기술하였다. 4인치 LTT의 구조적인 특징은 전면부 중앙에 광신호가 주입되는 수광부가 위치해 있으며 입력 전류 증폭을 위한 4-단계 증폭 게이트 (gate) 구조를 가지도록 설계하였다. $400{\Omega}{\cdot}cm$ 비저항을 갖는 1mm 두께의 n-형 실리콘 웨이퍼에 boron 이온주입과 열처리 공정으로 약 $30{\mu}m$ 깊이의 p-base를 형성하였으며, 고내압 저지를 위한 edge termination은 VLD (variable lateral doping) 기술을 적용하였다. 제작된 4인치 LTT는 6,500 V의 순방향 항복전압 ($V_{DRM}$) 특성을 나타내었으며, 100V의 어노드전압 ($V_A$)과 20 mA의 게이트전류 ($I_G$)에 의하여 thyristor가 trigger 됨을 확인하였다. 제작한 LTT 소자는 disk형 press-pack 패키지를 진행한 후, LTT의 수광부에 $10{\mu}s$, 50 mW의 900 nm 광 펄스를 조사하여 전류 특성을 평가하였다. LTT 패키지 샘플에 60 Hz 주파수의 광 펄스를 조사한 경우 2,460 A의 순방향 평균전류 ($I_T$)와 $336A/{\mu}s$의 반복전류상승기울기 (repetitive di/dt)에 안정적으로 동작함을 확인하였다. 또한, 펄스 전류 시험의 경우 61.6 kA의 최대 통전 전류 (ITSM, surge current)와 $1,050A/{\mu}s$의 펄스전류 상승 기울기 (di/dt of on-state pulse current)에도 LTT의 손상 없이 동작함을 확인하였다.

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Research of Matrix Effect Reduction of $CsX^+$ SNMS ($CsX^+$ SNMS의 Matrix Effect 감소연구)

  • 문환구;김동원;한철현;김영남;심태언
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.115-120
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    • 1992
  • SIMS is an indispensable surface analysis instrument in trace element depth profiling because of high detection sensitivity and excellent depth resolution, however, it requires a standard sample to do quantitative analysis due to matrix effect depending on the species of impurities and sample matricies and on the sputtering rates. Among the SNMS technology developed to supply the deficiency, we researched into CsX+ SNMS which improved the result quantitatively without any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate analysis using Siq layer etc., and adaptability to trace element concentration alaysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. Also detection limit and dynamic range were investigated. After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

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Co/Ti Bilayer Silicidation on the $\textrm{p}^{+}$-Si Region Implanted with High Dose of $\textrm{BF}_2$ ($\textrm{BF}_2$가 고농도로 이온주입된 $\textrm{p}^{+}$-Si 영역상에 Co/Ti 이중막 실리사이드의 형성)

  • Jang, Ji-Geun;Sin, Cheol-Sang
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.168-172
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    • 1999
  • We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.

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The Effect of Carbon Dioxide Leaked from Geological Storage Site on Soil Fertility: A Study on Artificial Leakage (지중 저장지로부터 누출된 이산화탄소가 토양 비옥도에 미치는 영향: 인위 누출 연구)

  • Baek, Seung Han;Lee, Sang-Woo;Lee, Woo-Chun;Yun, Seong-Taek;Kim, Soon-Oh
    • Economic and Environmental Geology
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    • v.54 no.4
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    • pp.409-425
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    • 2021
  • Carbon dioxide has been known to be a typical greenhouse gas causing global warming, and a number of efforts have been proposed to reduce its concentration in the atmosphere. Among them, carbon dioxide capture and storage (CCS) has been taken into great account to accomplish the target reduction of carbon dioxide. In order to commercialize the CCS, its safety should be secured. In particular, if the stored carbon dioxide is leaked in the arable land, serious problems could come up in terms of crop growth. This study was conducted to investigate the effect of carbon dioxide leaked from storage sites on soil fertility. The leakage of carbon dioxide was simulated using the facility of its artificial injection into soils in the laboratory. Several soil chemical properties, such as pH, cation exchange capacity, electrical conductivity, the concentrations of exchangeable cations, nitrogen (N) (total-N, nitrate-N, and ammonia-N), phosphorus (P) (total-P and available-P), sulfur (S) (total-S and available-S), available-boron (B), and the contents of soil organic matter, were monitored as indicators of soil fertility during the period of artificial injection of carbon dioxide. Two kinds of soils, such as non-cultivated and cultivated soils, were compared in the artificial injection tests, and the latter included maize- and soybean-cultivated soils. The non-cultivated soil (NCS) was sandy soil of 42.6% porosity, the maize-cultivated soil (MCS) and soybean-cultivated soil (SCS) were loamy sand having 46.8% and 48.0% of porosities, respectively. The artificial injection facility had six columns: one was for the control without carbon dioxide injection, and the other five columns were used for the injections tests. Total injection periods for NCS and MCS/SCS were 60 and 70 days, respectively, and artificial rainfall events were simulated using one pore volume after the 12-day injection for the NCS and the 14-day injection for the MCS/SCS. After each rainfall event, the soil fertility indicators were measured for soil and leachate solution, and they were compared before and after the injection of carbon dioxide. The results indicate that the residual concentrations of exchangeable cations, total-N, total-P, the content of soil organic matter, and electrical conductivity were not likely to be affected by the injection of carbon dioxide. However, the residual concentrations of nitrate-N, ammonia-N, available-P, available-S, and available-B tended to decrease after the carbon dioxide injection, indicating that soil fertility might be reduced. Meanwhile, soil pH did not seem to be influenced due to the buffering capacity of soils, but it is speculated that a long-term leakage of carbon dioxide might bring about soil acidification.