• Journal of Welding and Joining
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• v.18 no.6
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• pp.62-67
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• 2000

Metallurgical characteristics of bonded region and high temperature mechanical properties of heat resistant alloy, Fe-35Ni-26Cr during liquid phase diffusion bonding were investigated employing AM17 insert metal. The insert metal for bonding, AM17 was newly developed Ni-base metal using interpolation method. Bonding of specimens were carried out at 1,403~1,463K for 600s in vacuum. The microconstituents in the bonded interlayer disappeared in the bonding temperature over 1,423K. The microstructures, alloying elements and hardness distribution in the base metal. The tensile strength and elongation of the joints at elevated temperatures were the same level as one of the base metal in the bonding temperature over 1,423K. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Archives of Metallurgy and Materials
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• v.64 no.2
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• pp.507-512
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• 2019

Ag and Cu powders were mechanically alloyed using high-energy planetary milling to evaluate the sinter-bonding characteristics of a die-attach paste containing particles of these two representative conductive metals mixed at atomic scale. This resulted in the formation of completely alloyed Ag-40Cu particles of 9.5 ㎛ average size after 3 h. The alloyed particles exhibited antioxidation properties during heating to 225℃ in air; the combination of high pressure and long bonding time at 225℃ enhanced the shear strength of the chip bonded using the particles. Consequently, the chips sinter-bonded at 225℃ and 10 MPa for 10 min exhibited a sufficient strength of 15.3 MPa. However, an increase in bonding temperature to 250℃ was detrimental to the strength, due to excessive oxidation of the alloyed particles. The mechanically alloyed phase in the particle began to decompose into nanoscale Ag and Cu phases above a bonding temperature of 225℃ during heating.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.1053-1054
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• 2009

• Journal of the Korean Society for Heat Treatment
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• v.31 no.2
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• pp.49-55
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• 2018

A T-shape structure was manufactured by the superplastic forming and diffusion bonding process using two Ti-3Al-2.5V alloy tubes. A Ti-3Al-2.5V tube was prepared for the hydroforming in the superplastic condition until it reaches a surface area such as a roof welded in the hole of another Ti-3Al-2.5V tube. Afterward, the superplastic forming process and the diffusion bonding process were carried out simultaneously until the appropriate bonding along the interface area of two Ti-3Al-2.5V tubes was obtained. The bonding qualities were different at each location of the entire interface according to the applied process conditions such as strain, pressure, temperature, holding time, geometries, etc. The microstructures of bonding interface have been observed to understand the characteristics of the applied processes in this study.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.6
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• pp.764-769
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• 2014

This paper describes sheath voltage limiter(SVL) transient characteristics by switching overvoltage considering single point bonding in underground transmission cables. The crossbonding system is generally used for grounding methods of underground transmission system. However, the single point bonding system is used in selective area which is difficult to consist of crossbonding major section. The sheath voltage limiters are connected between joints in the single point bonding. Specially, the high overvoltage might be generated in that section as well as the aging of sheath voltage limiter might be progressed by various electrical stress including lightning overvoltage, switching overvoltage and power frequency overvoltage. Therefore, in this paper, the switching overvoltage characteristics in underground cables are firstly analysed using EMTP simulation. Then, the switching overvoltage of sheath voltage limiter is also studied in single point bonding. Finally, the reduction method of sheath voltage limiter switching overvoltage is proposed by various simulation studies including circuit breaker operating order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Korean Institute of Interior Design Journal
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• v.22 no.5
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• pp.367-375
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• 2013

Using the 'New material' concept has recently been introduced into the natural characteristics. In the course of such a, Janine M. Benyus has proposed to mimic the characteristics of natural ecosystems to mention the concept of Biomimicry. Process made engineered using technical elements for representing the material properties of Biomimicry such will be acting importantly, This study intends to analyze how new materials applied to 'Biomimicry' characteristics are processed in space. The results were as follows : 1) Processing methods of new materials resulted as 'Forming', 'Surface treatment', 'Bonding', 'Inserting'. These four were divided and analyzed into 'Form', 'System', 'Adaptation'. As a result of this analysis, such significances were shown as 'Forming/Surface treatment/Bonding' in 'Form', 'Bonding' in 'System' and 'Adaptation'. 2) 'Bonding' applied to 'System' of new material can be recycled to be combined with other materials through the existing adhesive material, and present as a solution of 'Sustainable development'. 3) 'Bonding' applied to 'Adaptation' of new material is to impart the ability to react to the environment through the joint, but is characteristic, at this time, using digital and other field technology. It appeared primarily that it can be known to meet the social trends and convergence between fields. Thus, as the finish that are friendly to the environment from the interior design, the results of the study are expected to be utilized in the study of new materials guidelines.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Transactions of Materials Processing
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• v.13 no.7
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• pp.623-628
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• 2004

This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.