• Title/Summary/Keyword: Bonding Wire

Search Result 219, Processing Time 0.057 seconds

The Low Height Looping Technology for Multi-chip Package in Wire Bonder (와이어 본더에서의 초저 루프 기술)

  • Kwak, Byung-Kil;Park, Young-Min;Kook, Sung-June
    • Journal of the Semiconductor & Display Technology
    • /
    • v.6 no.1 s.18
    • /
    • pp.17-22
    • /
    • 2007
  • Recent new packages such as MCP(Multi-Chip Package), QDP(Quadratic Die Package) and DDP(Dual Die Package) have stack type configuration. This kind of multi-layer package is thicker than single layer package. So there is need for the low height looping technology in wirebonder to make these packages thinner. There is stiff zone above ball in wirebonder wire which is called HAZ(Heat Affect Zone). When making low height loop (below $80\;{\mu}m$) with traditional forward loop, stiff wire in HAZ(Heat Affected Zone) above ball is bended and weakened. So the traditional forward looping method cannot be applied to low height loop. SSB(stand-off stitch) wire bonding method was applied to many packages which require very low loops. The drawback of SSB method is making frequent errors at making ball, neck damage above ball on lead and the weakness of ball bonding on lead. The alternative looping method is BNL(ball neckless) looping technology which is already applied to some package(DDP, QDP). The advantage of this method is faster in bonding process and making little errors in wire bonding compared with SSB method. This paper presents the result of BNL looping technology applied in assembly house and several issues related to low loop height consistence and BNL zone weakness.

  • PDF

Optimization of Performances in GaN High Power Transistor Package (질화갈륨 고출력 트랜지스터 패키지의 성능 최적화)

  • Oh, Seong-Min;Lim, Jong-Sik;Lee, Yong-Ho;Park, Chun-Seon;Park, Ung-Hee;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.9 no.3
    • /
    • pp.649-657
    • /
    • 2008
  • This paper describes the optimized output performances such as output power and the third order intermodulation in GaN high power transistor packages which consist of chip die, chip capacitors, and wire bonding. The optimized output power according to wire bonding techniques, and third order intermodulation performances according to wire bonding and bias conditions are discussed. In addition, it is shown through the nonlinear simulation that how the output performances are sensitive to the inductance values which are realized by wire bonding for matching network in the limited package area.

Critical Cleaning Requirements for Flip Chip Packages

  • Bixenman, Mike;Miller, Erik
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.7 no.1
    • /
    • pp.61-73
    • /
    • 2000
  • In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology.

  • PDF

Study on the Bonding Pad Lift Failure in Wire Bonding (와이어 본딩시 본딩 패드 리프트 불량에 관한 연구)

  • 김경섭;장의구;신영의
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.11 no.12
    • /
    • pp.1079-1083
    • /
    • 1998
  • In this study, ultrasonic power of Aluminum wire bonder, bond time and bond force are investigated and valued in order to minimize failure of bonding pad lift. We also tried to control those 3 factors properly. We got the conclusion that if we turn down the ability of ultrasonic power or bond time, we can get a pad lift from a boundary between bond pad ad wire because pad metal and wire joining is unstable, but it is best condition when it ultrasonic power is 100∼130unit, bond time is 15∼20msec and bond force is 4∼6gf.

  • PDF

FE-Simulation on drawing process of $Al-1\%Si$ bonding wire considering influence of fine Si particle (미세 Si 입자의 영향을 고려한 $Al-1\%Si$ 본딩 와이어의 신선공정해석)

  • Hwang W. H.;Moon H. J.;Ko D. C.;Kim B. M.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2005.05a
    • /
    • pp.393-396
    • /
    • 2005
  • This paper is concerned with the drawing process of $Al-1\%Si$ bonding wire. In this study, the finite-element model established in previous work was used to analyze the effect of various forming parameters, which included the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle in drawing processes. The finite-element results gave the consolidation condition. From the results of analysis, the effects of each forming parameter were determined. It is possible to obtain the Important basic data which can be guaranteed in the fracture prevention of $Al-1\%Si$ wire by using FE-Simulation.

  • PDF

Vibration Characteristics of a Wire-Bonding Ultrasonic Horn (와이어 본딩용 초음파 혼의 진동 특성)

  • Kim, Young Woo;Yim, Vit;Han, Daewoong;Lee, Seung-Yop
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.38 no.2
    • /
    • pp.227-233
    • /
    • 2014
  • This study investigates the vibration characteristics of a wire-bonding piezoelectric transducer and ultrasonic horn for high-speed and precise welding. A ring-type piezoelectric stack actuator is excited at 136 kHz to vibrate a conical-type horn and capillary system. The nodal lines and amplification ratio of the ultrasonic horn are obtained using a theoretical analysis and FEM simulation. The vibration modes and frequencies close to the driving frequency are identified to evaluate the bonding performance of the current wire-bonder system. The FEM and experimental results show that the current wire-bonder system uses the bending mode of 136 kHz as the principal motion for bonding and that the transverse vibration of the capillary causes the bonding failure. Because the major longitudinal mode exists at 119 kHz, it is recommended that the design of the current wire-bonding system be modified to use the major longitudinal mode at the excitation frequency and to minimize the transverse vibration of capillary in order to improve the bonding performance.

Microstructure Evolution and Mechanical Properties of Wire-Brushed Surface and Roll-Bonded Interface of Aluminum Sheets (와이어 브러싱한 알루미늄 판재 표면 및 압연접합 계면의 미세조직 및 기계적 성질)

  • Kim, Su-Hyeon;Kim, Hyoung-Wook;Kang, Joo-Hee;Euh, Kwangjun
    • Korean Journal of Metals and Materials
    • /
    • v.49 no.5
    • /
    • pp.380-387
    • /
    • 2011
  • Wire brushing, which is a typical surface preparation method for roll bonding, has recently been highlighted as a potentially effective method for surface nanocrystallization. In the present study, the microstructure evolution and hardness of the wire-brushed surface and roll-bonded interface of a 1050 aluminum sheet were investigated. Wire brushing formed protruded layers with a nanocrystalline structure and extremely high surface hardness. After roll bonding, the protruded layers remained as hard layers at the interface. Due to their hardness and brittleness the interface hard layers, can affect the interface bonding properties and also play an important role determining the mechanical properties of multi-layered clad sheets.

3D Measurement System of Wire for Automatic Pull Test of Wire Bonding (Wire bonding 자동 전단력 검사를 위한 wire의 3차원 위치 측정 시스템 개발)

  • Ko, Kuk Won;Kim, Dong Hyun;Lee, Jiyeon;Lee, Sangjoon
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.21 no.12
    • /
    • pp.1130-1135
    • /
    • 2015
  • The bond pull test is the most widely used technique for the evaluation and control of wire bond quality. The wire being tested is pulled upward until the wire or bond to the die or substrate breaks. The inspector test strength of wire by manually and it takes around 3 minutes to perform the test. In this paper, we develop a 3D vision system to measure 3D position of wire. It gives 3D position data of wire to move a hook into wires. The 3D measurement method to use here is a confocal imaging system. The conventional confocal imaging system is a spot scanning method which has a high resolution and good illumination efficiency. However, a conventional confocal systems has a disadvantage to perform XY axis scanning in order to achieve 3D data in given FOV (Field of View) through spot scanning. We propose a method to improve a parallel mode confocal system using a micro-lens and pin-hole array to remove XY scan. 2D imaging system can detect 2D location of wire and it can reduce time to measure 3D position of wire. In the experimental results, the proposed system can measure 3D position of wire with reasonable accuracy.

A Study of shear bond strength of bonded retainer according to the bonding method and type of wires (접착방법 및 multistranded wire의 종류에 따른 접착식 보정장치의 전단접착강도에 관한 연구)

  • Lee, Hyoung-Cheol;Son, Woo-Sung
    • The korean journal of orthodontics
    • /
    • v.32 no.2 s.91
    • /
    • pp.143-153
    • /
    • 2002
  • The bonded orthodontic retainer constructed from composite and multistrand orthodontic wire provides an esthetic and efficient system for maintained retention. This study was designed to measure shear bond strength of bonded retainers and to suggest a optimal combination of a multistrand wire and bonding method used when bonded retainer was fabricated. 160 sound maxillary and mandibular premolars were used for 80 test samples. After Uniformizing bonding area, length of wire, and thickness of composite, multistrand wire was bonded to fabricated a bonded retainer by direct or indirect bonding method. Shear bond strength and extension length of each sample were measured by a universal testing machine. The results of this study were as follows : 1. In vitro shear bond testing found 6-stranded, 0.0155 inch wires to have the largest shear bond strength and 3-stranded, 0.0195 inch wires to have the least shear bond strength. But, These difference was not statistically significant(p<0.05). 2. In vitro extension testing found 3-stranded, 0.0155 inch wires to have the largest extension length and 3-stranded, 0.0195 inch wires to have the least extension length(p<0.05). The larger diameter wire was used, the larger extension length was shown. But, the strand of wire is not related to the extension length of wire. 3. In comparison with direct bonding method, larger shear bond strength and extension length was shown in indirect bonding method(p<0.05).

Simulation of Ultrasonic Stress During Impact Phase in Wire Bonding

  • Mayer, Michael
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.20 no.4
    • /
    • pp.7-11
    • /
    • 2013
  • As thermosonic ball bonding is developed for more and more advanced applications in the electronic packaging industry, the control of process stresses induced on the integrated circuits becomes more important. If Cu bonding wire is used instead of Au wire, larger ultrasonic levels are common during bonding. For advanced microchips the use of Cu based wire is risky because the ultrasonic stresses can cause chip damage. This risk needs to be managed by e.g. the use of ultrasound during the impact stage of the ball on the pad ("pre-bleed") as it can reduce the strain hardening effect, which leads to a softer deformed ball that can be bonded with less ultrasound. To find the best profiles of ultrasound during impact, a numerical model is reported for ultrasonic bonding with capillary dynamics combined with a geometrical model describing ball deformation based on volume conservation and stress balance. This leads to an efficient procedure of ball bond modelling bypassing plasticity and contact pairs. The ultrasonic force and average stress at the bond zone are extracted from the numerical experiments for a $50{\mu}m$ diameter free air ball deformed by a capillary with a hole diameter of $35{\mu}m$ at the tip, a chamfer diameter of $51{\mu}m$, a chamfer angle of $90^{\circ}$, and a face angle of $1^{\circ}$. An upper limit of the ultrasonic amplitude during impact is derived below which the ultrasonic shear stress at the interface is not higher than 120 MPa, which can be recommended for low stress bonding.