• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.1
• /
• pp.11-15
• /
• 2001

We present the design and strength evaluation of an anodically bonded pressurized cavity array, based on the energy release rate measured from the anodically bonded plates of two dissimilar materials. From a theoretical analysis, a simple fracture mechanics model of the pressurized cavity array has been developed. The energy release rate (ERR) of the bonded cavity with an infinite bonding length has been derived in terms of cavity pressure, cavity size, bonding length, plate size and material properties. The ERR with a finite bonding length has been evaluated from the finite element analysis performed for varying cavity and plate sizes. It is found that, for an inter-cavity bonding length greater than the half of the cavity length, the bonding strength of cavity array approaches to that of the infinite plate. For a shorter bonding length, however, the bonding strength of the cavity array is monotonically decreased with the ratio of the bonding length to the cavity length. The critical ERR of 6.21J/㎡ has been measured from anodically bonded silicon-glass plates. A set of critical pressure curves has been generated for varying cavity array sizes, and a design method of the pressurized cavity array has been developed for the failure-free wafer-level packaging of MEMS devices.

• Transactions of Materials Processing
• /
• v.28 no.1
• /
• pp.15-20
• /
• 2019

The superplastic forming/diffusion bonding process has been developed to fabricate a core frame structure with joint nodes out of tubes, for the development of a titanium high performance bicycle. The hydroforming process has been applied for bulging of a tube in the superplastic condition before, and during the diffusion bonding process. In this experiment, a commercial Ti-3Al-2.5V tube was selected as raw material for the study. The forming experiment has been performed using a servo-hydraulic press with a capacity of 200 ton. Next, nitrogen gas was used to acquire necessary pressure for the bulging and bonding of the tubes to fabricate the joint nodes. The pertinent processing temperature was $870^{\circ}C$ for the superplastic hydroforming/diffusion bonding (SHF/DB) process, using the Ti-3Al-2.5V tube. The bonding quality and the progress of bulging and diffusion bonding have been observed by the investigation of the joining interfaces at the cross section of the joint structure. The control of the nitrogen pressure throughout the SHF/DB process, was an important factor to avoid any significant defects in the joint structure. The whole progress stage of the diffusion bonding could be observed at a joint interface. A core structure with 5 joint nodes to manufacture a titanium bicycle could be obtained in a SHF/DB process.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.22 no.5
• /
• pp.812-817
• /
• 2013

This study demonstrates the diffusion bonding process between a tungsten carbide shank (K30) and tungsten carbide (DX5) for micro WC-PCD tool fabrication. A type of nickel alloy was used as the filler met alto improve the bond ability between K30 and DX5. The bonding pressure, time, and surrounding conditions were kept constant. In particular, the normal pressure was controlled precisely under buckling analysis. Diffusion bonding was performed at various operation temperatures (1170-1770 K) by using a specially designed jig. The microstructure on the localized bonded surface was analyzed using scanning electron microscopy and optical microscopy. In the case of diffusion bonding of WCat 1370-1770K, the filler metal melted completely and diffused between the two base metals, and they were bonded more tightly on both sides than at temperatures below 1370 K. Our results demonstrated the importance of sensitive temperature dependence of diffusion bonding.

• Proceedings of the Korean Society of Laser Processing Conference
• /
• 2006.11a
• /
• pp.53-81
• /
• 2006

A COG(Chip on Glass) bonding process that is one of display packaging technology and bonds between driver IC chip and a glass panel using ACF(Anisotropic Conductive Film)has been investigated by using diode laser. This method is possible to raise cure temperature of ACF within one second and can reduce the total process time for COG bonding by a conventional method such as a hot plate. Also we can get good pressure mark on the surface of electrodes and higher bonding strength than that by convention method. Results show that laser COG bonding can give low pressure bonding and decrease a warpage of panel. We believe that it can be applied to fine pitch module.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.9 no.4
• /
• pp.41-47
• /
• 2000

In this study, the purpose finds out the best welding conditions for bonding of electric wire by ultrasonic welding. The material was plastic-insulating low-voltage-cabels for automobiles. The experiment varied the values of welding time and welding pressure and fixed the values of amplitude and energy. With the facts, the best condition for ultrasonic welding to achieve bonding exactly is gained according to the size of the cross-sectional area of the cable, and the adhesive intensity is greatly influenced by the variables of welding time and welding pressure. Also when the welding time and welding time and welding pressure increase as the cross-sectional areas of the cable increase the welding result in gained exactly.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.4
• /
• pp.354-361
• /
• 2008

Cold rolled steel sheet for automotive was treated by Ar/$O_2$ atmospheric pressure plasma to improve the adhesive bonding strength. Through the contact angle test and calculation of surface free energy for cold rolled steel sheet, the changes of surface properties were investigated before and after plasma treatment. The contact angle was decreased and surface free energy was increased after plasma treatment. And the change of surface roughness and morphology were observed by AFM(Atomic Force Microscope). The surface roughness of steel sheet was slightly changed. Based on Taguchi method, single lap shear test was performed to investigate the effect of experimental parameter such as plasma power, treatment time and flow rate of $O_2$ gas. Results shows that the bonding strength of steel sheet treated in Ar/$O_2$ atmospheric pressure plasma was improved about 20% compared with untreated sheet.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.159-163
• /
• 2001

The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the $SiO_2$-$SiO_2$ bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the $SiO_2$-$SiO_2$ bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.05a
• /
• pp.332-335
• /
• 2007

The superplastic forming (SPF) has been widely used in the automotive and aerospace industry because it has great advantages to produce very light and strong components. Finite element method (FEM) is used to model the process of superplastic forming/diffusion bonding (SPF/DB), to predict the pressure-time curve and to analyze the process parameter. In this study, process design of SPF/DB is carried out a 3-sheet sandwich part. SPF/DB process with pressure control was analyzed by using finite element method. For obtaining proper shape, step-by-step pressurization is proposed. The first step of SPD/DB process is obtained by applying of pressure in patches. From the next step it applied pressure to all regions (between inner sheets, between inner and face sheets). By using the proposed pressurization scheme, deficit in part shape is found to be eliminated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.370-373
• /
• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Journal of the Korean Ceramic Society
• /
• v.16 no.3
• /
• pp.178-183
• /
• 1979

The carborundum abrasive specimens bonded with a soda-borosilicate glass were prepared. Samples fired at specified temperatures with various mixing ratio and forming pressure were examined in terms of the structure, bonding strength, and microscopic observations. Increasing the forming pressure up to 400kg/$\cm^2$, the structure became denser in proportion to the forming pressure. The bonding strength was generally increased with increasing the mixing ratio (Vb/Vg), but the bloating phenomena were observed when samples were fired above 95$0^{\circ}C$ with mixing ratio above 20%, consequently, the bonding strength was decreased. Samples fired at the temperature range 900~95$0^{\circ}C$ with mixing ratio 15~30% had the dense structure with various grades.