• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 1994년도 특별강연 및 춘계학술발표 개요집
• /
• pp.75-78
• /
• 1994

• Journal of Welding and Joining
• /
• 제18권6호
• /
• pp.62-67
• /
• 2000

Metallurgical characteristics of bonded region and high temperature mechanical properties of heat resistant alloy, Fe-35Ni-26Cr during liquid phase diffusion bonding were investigated employing AM17 insert metal. The insert metal for bonding, AM17 was newly developed Ni-base metal using interpolation method. Bonding of specimens were carried out at 1,403~1,463K for 600s in vacuum. The microconstituents in the bonded interlayer disappeared in the bonding temperature over 1,423K. The microstructures, alloying elements and hardness distribution in the base metal. The tensile strength and elongation of the joints at elevated temperatures were the same level as one of the base metal in the bonding temperature over 1,423K. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of Welding and Joining
• /
• 제23권2호
• /
• pp.52-58
• /
• 2005

This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• 한국전기전자재료학회논문지
• /
• 제15권10호
• /
• pp.883-888
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• 한국세라믹학회지
• /
• 제36권2호
• /
• pp.151-158
• /
• 1999

유기단분자인 $\varepsilon$-Caprolactame을 montmorillonite의 층사이에 삽입하여 증합반응시켜 고분자화해 줌으로써 무기고분자와 유기고분자를 화학결합에 의해 연결시켜 주었다. X-선 및 IR-분석결과 층내에서의 $\varepsilon$-Caprolactame의 고분자반응이 성공적으로 이루어졌음이 입증되었다. 고분자 반응생성물을 좀 더 자세히 분석조사하기 위해 고분자 물질을 층사이로부터 격리시켜 X-선회절분석 및 IR 분석한 결과와 montmorillonite없이 $\varepsilon$-Caprolactame만 고분자화시켜 얻은 순수고분자에 대한 동일한 분석 결과를 비교해 본 결과 서로 동일한 화합물임이 입증되었다.

• Bulletin of the Korean Chemical Society
• /
• 제24권8호
• /
• pp.1215-1218
• /
• 2003

An analysis of the bonding situation in CaM₂P₂ (M=Fe, Ni) with ThCr₂Si₂ structure is made in terms of DOS and COOP plots. The main contributions to covalent bonding are due to M-P and P-P interactions in both compounds. Particularly, the interlayer P-P bonding by variation in the transition metal is examined in more detail. It turns out that the shorter P-P bonds in CaNi₂P₂ form as a result of the decreasing electron delocalization into ${{\sigma}_p}^*$ of P₂ due to the weaker bonding interaction between the metal d and ${{\sigma}_p}^*$ as the metal d band is falling from Fe to Ni.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권1호
• /
• pp.70-72
• /
• 2000

In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.

• Journal of Welding and Joining
• /
• 제19권1호
• /
• pp.75-81
• /
• 2001

The metallurgical study of microconstituents in transient liquid phase bonded joints of Ni-base single crystal superalloys, CMSX-2 and CMSX-4 was investigated employing MBF-80 insert metal. TLP bonding of specimens was carried out at 1,373~1,523K for 0~19.6ks in vacuum. Three types of microconstituents ; needle-like constituent, dot-like constituent and abnormal shape constituent were formed in the bonded interlayer during TLP bonding operation. All these microconstituents were identified as boride. Microconstituents contain a large percentage of Cr in the early stage of bonding. As increasing the holding time, the amount of Cr was decreased and the amount of W, Co and Re were increased. From the analysis results of electron diffraction pattern by TEM, composition of elements in microconstituents were into MBlongrightarrowM$_{5}$B$_3$longrightarrowM$_2$B type with the increased in holding time. It can be explained by the fact that the relative amount of boron in microconstituents was decreased when the holding time was increased.d.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.511-512
• /
• 2006

Tungsten coatings with different interlayers onto the oxygen-free copper substrates were fabricated by atmosphere plasma spraying. The effects of different interlayers of NiCrAl, NiAl and W/Cu on bonding strength were studied. SEM, EDS and XRD were used to investigate the photographs and compositions of these coatings. The tungsten coatings with different initial particle sizes resulted in different microstructures. Oxidation was not detected in the tungsten coating, but in the interlayer, it was found by both XRD and EDS. The tungsten coating deposited directly onto the copper substrate presented higher bonding strength than those with different interlayers.