• 한국표면공학회지
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• 제32권3호
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• pp.312-316
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• 1999

The interfacial structure of duplex treated AISI 4140 consisting of iron nitride and TiN layer was characterized by optical microscope, SEM and XRD. A black layer was formed from the decomposition of iron nitride during Ti ion bombardment. The black layer was characterized as an a-Fe phase transformed from the iron nitride by XRD. In order to identify the formation mechanism of the black layer, a thermal analysis of iron nitride undertaken by DSC method. As an iron nitride was mostly consisted of ${\gamma}$'-Fe$_4$N and $\varepsilon$-$Fe_3$N phase after plasma nitriding, in this study, a ${\gamma}$'$-Fe_4$N and $\varepsilon$-$Fe_3$N powders were separately prepared by the different processing conditions of gas nitriding of iron powder in the fluidized bed. From the DSC thermal analysis, the phase transformation of ${\gamma}$'$-Fe_4$N, $\varepsilon$-$Fe_3$N was followed the path of transformation; $ \Upsilon{'}-Fe_4$Nlongrightarrow${\gamma}$-Felongrightarrowa-Fe and of $\varepsilon$-$Fe_3$Nlongrightarrow$\varepsilon$-$Fe_{2.5}$ /N+${\gamma}$'$-Fe_4$Nlongrightarrow${\gamma}$'-Fe$_4$Nlongrightarrow${\gamma}$longrightarrowFelongrightarrowalongrightarrowFe, respectively. It explains the reason why the $\varepsilon$ $-Fe_3$N phase disappeared in the first time and then ${\gamma}$'-Fe$_4$N in the formation of the black layer in the duplex coating.

• 한국표면공학회지
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• 제36권4호
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• 한국표면공학회지
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• 제32권3호
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• pp.416-422
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• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• 한국잠사학회:학술대회논문집
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• 한국잠사학회 1997년도 Progress and Future Development of Sericultural Science and Technology 40th Anniversary Commemoration Symposium
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• pp.23-49
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• 1997

This is a progress report of rice biotechnology including development of gene transformation system, gene cloning and molecular mapping in rice. The scope of the research was focused on the connection between conventional breeding and biotech-researches. Plant transformation via Agrobacterium or particle bombardment was developed to introduce one or several genes to recommended rice cultivars. Two chimeric genes containing a maize ribosome inactivating protein gene (RIP) and a gerbicide resistant gene (bar) were introduced to Nipponbare, a Japonica cultivar, and transmitted to Korean cultivars. The homozygous progenies of herbicide resistant transgenic plant showed good fertility and agronomic characters. To explore the genetic resourses in rice, over 8,000 cDNA clones from immature rice seed have been isolated and sequenced. About 13% of clones were identified as enzymes related to metabolic pathway. Among them, twenty clones have high homology with genes encoding enzymes in the photorespiratory carbon cycle reaction. Up to now about 100 clones were fully sequenced and registered at EMBL and GenBank. For the mapping of quantitative tarits loci (QTL) and eternal recombinant inbred population with 164 F13 lines (MGRI) was developed from a cross between Milyang 23 and Gihobyeo, Korean rice cultivars. After construction of fully saturated RFLP and AFLP map, quantitative traits using MGRI population were analyzed and integrated into the molecular map. Eighty seven loci were determined with 27 QTL characters including yield and yield components on rice chromosomes. Map based cloning was also tried to isolate semi-dwarf (sd-1) gene in rice. A DNA probe, RG 109, the most tightly linked to sd-1 gene was used to screen from bacterial artifical chromosome (BAC) libraries and five over lapping clones presumably containing sd-1 gene were isolated. Rice genetic database including results of biotech reasearch and classical genetics is provided at Korea Rice Genome Server which is accessible with world wide web (www) browser. The server provides rice cDNA sequences and map informations linked with phenotypic images.

• 한국표면공학회지
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• 제54권6호
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• pp.302-306
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• 2021

SnO₂ 30/Ag 15/SnO₂ 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10^-3 Ω^-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO₂ 30/Ag 15/SnO₂ 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

• Journal of Plant Biotechnology
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• 제48권4호
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• pp.246-254
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• 2021

Environmental stresses are estimated to have reduced global crop yields of wheat by 5.5%. However, traditional approaches for the transfer of resistance to these stresses in wheat plants have yielded limited results. In this regard, genetic transformation has undoubtedly opened up new avenues to overcome crop losses due to various abiotic stresses. Particle bombardment has been successfully employed for obtaining transgenic wheat. However, most of these procedures employ immature embryos, which are not available throughout the year. Therefore, the present investigation utilized mature seeds as the starting material and used the calli raised from three Moroccan durum wheat varieties as the target tissue for genetic transformation by the biolistic approach. The pANIC-5E plasmid containing the SINA gene for drought and salinity tolerance was used for genetic transformation. To enhance the regeneration capacity and transformation efficiency of the tested genotypes, the study compared the effect of copper supplementation in the induction medium (up to 5 μM) with the standard MS medium. The results show that the genotypes displayed different sensitivities to CuSO₄, indicating that the transformation efficiency was highly genotype-dependent. The integration of transgenes in the T₀ transformants was demonstrated by polymerase chain reaction (PCR) analysis of the obtained resistant plantlets with primers specific to the SINA gene. Among the three genotypes studied, 'Isly' showed the highest efficiency of 9.75%, followed by 'Amria' with 1.25% and 'Chaoui' with 1%.

• Nuclear Engineering and Technology
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• 제51권2호
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• pp.631-640
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• 2019

Thorium ($^{232}Th$) is four times more abundant than uranium in nature and has become a new important source of energy in the future. This is due to the ability of thorium to undergo the bombardment of neutron to produce uranium-233 ($^{233}U$). The aim of this study is to investigate the production cost of thorium oxide ($ThO_2$) resulted from the thorium extraction process. Four main parameters were studied which include raw material and chemical cost, total capital investment, direct cost and indirect cost. These parameters were justified to obtain the final production cost for the thorium extraction process. The result showed that the raw material costs were $63,126.00 - $104,120.77 (0.5 ton), $126,252.00 - $178,241.53 (1.0 ton), and $1,262,520.00 - $1,782,415.33 (10.0 tons). The total installed equipment and total cost investment were estimated to be approximately $11,542,984.10 and $13,274,431.715 respectively. Hence, the total costs for producing 1 kg $ThO_2$ were $6829.79 - $6911.78, $3540.95 - $3592.94, and $501.18 - $553.17 for 0.5, 1.0, and 10.0 tons respectively. The result concluded that with higher mass production, the cost of 1 kg $ThO_2$ would be reduced which in this scenario, the lowest production cost was $$501.18kg^{-1}$-$$553.17kg^{-1}$ for 10.0 tons of $ThO_2$ production.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• Nuclear Medicine and Molecular Imaging
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• 제40권4호
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• pp.228-232
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• 2006

목적 : $[^{18}F]F_2\;(T_{1/2}=110\;min)$ 기체를 이용하여 친전자성 치환반응으로 방사성동위원소 $^{18}F$을 표지하는 방법은 새로운 앙전자방출단층촬영용 방사성의약품 개발 분야에서 유용하게 이용되고 있다. 그림에도 불구하고 $[^{18}F]F_2$를 높은 생산수율과 비방사능으로 생산하기 위한 표적 개발 연구는 아직도 진행 중에 있다. 본 연구에서는 친핵성 치환반응으로 $^{18}F$을 도입하기 어려운 방사성의약품에 친전자성 치환반응으로 방사성동위원소를 도입할 수 있는 $[^{18}F]F_2$ 가스의 효율적인 생산에 관해 연구하였다. 대상 및 방법: 표적은 원추형 모양의 알루미늄 재질로 제작하였다. $[^{18}F]F_2$ 생산을 위한 핵반응으로 $^{18}O(p,n)^{18}F$를 사용하였으며, two-step 빔 조사방법을 이용하였다. 첫 번째 조사는 농축 $[^{18}O]O_2$가스를 표적에 충진한 후 빔 조사하여 $^{18}O(p,n)^{18}F$ 핵반응을 일으킴으로써 $^{18}F$를 생산한다. 생산된 $^{18}F$은 표적 챔버 기벽에 흡착된다. $[^{18}O]O_2$은 재사용을 위하여 냉각포획법으로 회수하였으며, $^{18}F$를 회수하기 위해 $[^{19}F]F_2/Ar$ 가스를 충진한 후, 두 번째 빔을 조사하여 방사성불소를 회수하는 방법으로 구성된다. 본 연구에서는 최적의 방사성불소 생산 조건을 찾기 위해 빔 조사 시간, 빔 전류 세기 농축 $[^{18}O]O_2$ 충진 압력 등의 변화에 따라 생산량을 평가하였다. 결과: 빔 조사 시간, 빔 전류, 농축 $[^{18}O]O_2$ 충진 압력 등의 조건을 변화시키면서 생산량을 평가한 결과 최적의 빔 조사 조건은 다음과 같다. 첫 번째 조사: 농축 $[^{18}O]O_2$을 약 15.0 bar충진, 13.2 MeV, 30 ${\mu}A$로 60-90분 조사; 두 번째 조사: 1% $[^{19}F]F_2/Ar$혼합가스 12.0 bar 충진, 13.2 MeV, 30 ${\mu}A$로 20-30분 조사 후 아르곤 가스로 회수하였을 때 EOB(end of bombardment) 기준으로 약 $34{\pm}6.0$ GBq(n>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.

• 대한전자공학회논문지SD
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• 제38권12호
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• pp.8-13
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• 2001

$CeO_2$ 박막은 강유전체 메모리 디바이스 응용을 위한 금속-강유전체-절연체-실리콘 전계효과 트랜지스터 구조에서의 강유전체 박막과 실리콘 기판 사이의 완충층으로서 제안되어지고 있다. 본 논문에서는 $CeO_2$ 박막을 유도 결합 플라즈마를 이용하여 $Cl_2$/Ar 가스 혼합비에 따라 식각하였다. 식각 특성을 알아보기 위한 실험조건으로는 RF 전력 600 W, dc 바이어스 전압 -200 V, 반응로 압력 15 mTorr로 고정하였고 $Cl_2$($Cl_2$+Ar) 가스 혼합비를 변화시키면서 실험하였다. $Cl_2$/($Cl_2$+Ar) 가스 혼합비가 0.2일때 $CeO_2$ 박막의 식각속도는 230 ${\AA}$/min으로 가장 높았으며 또한 $YMnO_3$에 대한 $CeO_2$의 선택비는 1.83이였다. 식각된 $CeO_2$ 박막의 표면반응은 XPS와 SIMS를 통해서 분석하였다. XPS 분석 결과 $CeO_2$ 박막의 표면에 Ce와 Cl의 화학적 반응에 의해 CeCl 결합이 존재함을 확인하였고, 또한 SIMS 분석 결과로 CeCl 결합을 확인하였다. $CeO_2$ 박막의 식각은 Cl 라디칼의 화학적 반응의 도움을 받으며 Ce 원자는 Cl과 반응을 하여 CeCl과 같은 혼합물로 $CeO_2$ 박막 표면에 존재하며 이들 CeCl 혼합물은 Ar 이온들의 충격에 의해 물리적으로 식각 되어진다.