• Title/Summary/Keyword: Blue-light emitting material

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A Study on the Fabrication and Characteristic Analysis of Organic Light Emitting Device using BAlq (BAlq를 적용한 유기발광소자의 제작 및 특성 분석에 관한 연구)

  • 오환술;황수웅;강성종
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.83-88
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    • 2004
  • BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.

Characterization of Blue Organic Light Emitting Diodes using TPM-BiP (TPM-BiP 청색 형광 재료의 전계발광특성)

  • Chang, Ji-Geun;Shin, Sang-Baie;Ahn, Jong-Myoung;Chang, Ho-Jung;Lee, Hak-Min;Gong, Myoung-Sun;Kim, Min-Young;Kim, Jun-Woo
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.2 s.19
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    • pp.11-14
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    • 2007
  • For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

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The Spacer Thickness Effects on the Electroluminescent Characteristics of Hybrid White Organic Light-emitting Diodes

  • Seo, Ji-Hoon;Park, Jung-Sun;Seo, Bo-Min;Kim, Young-Kwan;Lee, Kum-Hee;Yoon, Seung-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.6
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    • pp.208-211
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    • 2009
  • The authors have demonstrated the various characteristics of hybrid white organic light-emitting diodes (HWOLED) using fluorescent blue and phosphorescent red emitters. We also demonstrated that two devices showed different characteristics in accordance with thickness of the 4,4′-N,N′-dicarbazole-biphenyl (CBP) spacer (CS) inserted between the blue and the red emitting layer. It was found that the device with a CS thickness of 70 $\AA$ showed a current efficiency 2.5 times higher than that of the control device with a CS thickness of 30 $\AA$ by preventing the triplet Dexter energy transfer from the red to the blue emitting layer. The HWOLED with the CS thickness of 70 $\AA$ exhibited a maximum luminance of 24500 cd/$m^2$, a maximum current efficiency of 42.9 cd/A, a power efficiency of 37.5 lm/W, and Commission Internationale de I'Eclairage coordinates of (0.37, 0.42).

Synthesis and Characteristics of Blue Light Emitting Soluble PPV Copolymer (청색 발광 가용성 PPV 공중합체의 합성 및 특성)

  • 이경민;최병수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.145-151
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    • 2001
  • In this study, blue light emiting, soluble PPV copolymers were synthesized by Witting reaction and characterized. ITO/copolymer/Ca and ITO/copolymer/A1 structured light emitting diodes(LED) were fabricated and their I-V characteristics were examined. Copolymers showed $\pi$-$\pi$ transition in UV-Vis./NIR spectra. The PL and abosorption spectrum showed the symmetric vibration modes with mirror images which means that copolymers are highly aligned. By introducing aliphatic hydrocarbon group on polymer main chain, the solubility of copolymers was improved and no significant effects of substituent were observed. The band offset of copolymers are well suited as light emitting material for LED application than monomer or oligomer does. THe band offset of copolymers is ∼3eV in PL spectrum and the threshold voltages of ITO/copolymer/Ca and ITO/copolymer/Al structured LED 3V, 12V respectively. In the case of ITO/copolymer/Ca LED, it is believed that the amount of electrons and holes is well balanced and the recombination of opposite charges occurs easily because the work functions of Ca and Al electrodes are 2.9 and 4.3eV respectively and the difference in barrier height between polymer and electrode was small.

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Inclusion of Silicon Delta-doped Two-dimensional Electron Gas Layer on Multi-quantum Well Nano-structures of Blue Light Emitting Diodes

  • Kim, Keun-Joo
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.173-179
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    • 2004
  • The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

Synthesis and properties of organic light-emitting diodes using BECCIP material

  • Lee, Ho-Sik;Kim, Sang-Keol;Lee, Won-Jae;Park, Jong-Wook;Kim, Tae-Wan;Kang, Dou-Yol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.10a
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    • pp.56-58
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    • 2000
  • We have synthesized the new blue electroluminescent material, Bis(3-N-ethylcarbazolyl)cyanoisophthalidene(BECCIP), and characterized its properties by UV/visible absorption, photoluminescent(PL) and electroluminecent(EL) spectrum. This material is well vacuum-deposited for thin film and has dear surfaced thin film property. The BECCIP shows blue PL and EL spectra at around at 485nm.

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Synthesis and properties of organic light-emitting diodes using BECCIP material

  • Lee, Ho-Sik;Kim, Sang-Keol;Lee, Won-Jae;Park, Jong-Wook;Song, Min-Jong;Kim, Tae-Wan;Kang, Dou-Yol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.174-176
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    • 2000
  • We have synthesized the new blue electroluminescent material, Bis(3-N-ethylcarbazolyl)cyanoisophthalidene(BECCIP), and characterized its properties by UV/visible absorption, photoluminescent(PL) and electroluminecent(EL) spectrum. This material is well vacuum-deposited far thin film and has clear surfaced thin film property. The BECCIP shows blue PL and EL spectra at around at 485nm.

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White Organic Light Emitting Diodes using Red and Blue Phosphorescent Materials with Blocking Layer

  • Park, Jung-Hyun;Kim, Gu-Young;Lee, Seok-Jae;Seo, Ji-Hyun;Seo, Ji-Hoon;Kim, Young-Kwan
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.218-221
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    • 2007
  • High-efficiency white organic light-emitting diodes(WOLEDs) were fabricated with two emissive layers and an blocking layer was sandwiched between two phosphorescent dopants, bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(FIrpic) as the blue emission and a newly synthesized red phosphorescent material guest, bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate($(acppy)_2Ir(acac)$). This blocking layer prevented a T-T annihilation in a red emissive layer, and balanced with blue and red emission as blocking of hole carriers. The white device showed Commission Internationale d'Eclairage($CIE_{x,y}$) coordinates of (0.317, 0.425) at 22400 $cd/m^2$, a maximum luminance of 27300 $cd/m^2$ at 268 $mA/cm^2$, a maximum luminous efficiency and power efficiency of 26.9 cd/A and 18.6 lm/W.

Emission Characteristics of White PHOLEDs with Different Emitting Layer Structures (발광층 구조에 따른 백색 인광 OLED의 발광 특성)

  • Seo, Jung-Hyun;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.6
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    • pp.456-461
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    • 2012
  • We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2 cd/A, 15.1%, and (0.382, 0.369) at 1,000 $cd/m^2$, respectively.

The Investigation of Photolithographic Patterning Method for Polymer Light Emitting Diodes (PLEDs) (고분자 전기 발광 다이오드(PLEDs)를 위한 포토리소그라피 패터닝 방법에 관한 연구)

  • Kim, Mi-Kyung;Lee, Jeong-Ik;Kim, Duck-Il;Hwang, Chi-Sun;Yang, Yong-Suk;Oh, Ji-Young;KoPark, Sang-He;Chu, Hye-Yong;Kim, Suk-Kyung;Hwang, Do-Hoon;Lee, Hyung-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.106-108
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    • 2004
  • We have investigated the photolithographic patterning method of light emitting polymer film for polymer light emitting diodes (PLED). Blue light emitting polymers based on polyfluorene, which can be cured photochemically to yield an insoluble form, have been synthesized using Ni(0) mediated Yamamoto polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope analysis, UV/visible spectroscopy, and photoluminescence. We have successfully fabricated PLEDs composed of the patterned emissive layer and their electroluminescence property has been also investigated. In this presentation, the detailed photolithographic patterning method and its application for polymer light emitting display will be discussed.

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