• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.566-569
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• 1999

The blue emitting BAM Phosphor Particles with various compositions were Prepared by the spray Pyrolysis. The effect of composition on the morphology of BAM particles was Investigated. In the case of BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$, the morphology of particles with sphericity and non-aggregation characteristics disappeared after post-treatment at 1400 $^{\circ}C$ for 3 hrs. On the other hand, the ocher composition particles except BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$ maintained their original morphology after post-treatment, even if the particles were prepared at low temperatures in the spray pryrolysis. The BAM particles with MgAl$_{2}$/O$_4$as intermediate material at low post-treatment temperature had high thermal stability and maintained sphericity of particles after post-treatment. All the samples had main omission peak at 450 nm, which corresponds to blue emission. The optimum post-treatment temperature of BAM:Eu$^{2+}$ particles for the maximum PL(photoluminescence) intensity in the spray pylolysis was 1200 $^{\circ}C$ because of high crystallinity, Phase-Purity, and good morphology.ology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.803-806
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• 2002

Flame spray pyrolysis was applied to improve the photoluminescence characteristics of blue-emitting $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles with high brightness for the application to LED phosphor. $Sr_5(PO_4)_3Cl:Eu^{2+}$ prepared from conventional spray pyrolysis had poor PL intensity than that of commercial products under long-wavelength ultraviolet(UV). $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by flame spray pyrolysis had PL intensity as same as that of commercial products under long-wavelength UV. Hollow morphology and porous structure of the particles prepared by the flame spray pyrolysis disappeared after posttreatment. Even though the $Sr_5(PO_4)_3Cl:Eu^{2+}$ phosphor particles prepared by the flame spray pyrolysis had irregular shape, the particles had dense structure and clear surface property.

• 융복합기술연구소 논문집
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• 제4권1호
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• pp.21-27
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• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• 한국세라믹학회지
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• 제40권10호
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• pp.949-953
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• 2003

청색 발광특성을 갖는 CaWO$_4$ 형광체를 rf 마그네트론 스퍼터링 방법으로 박막화를 시도하고,증착변수와 열처리 조건이 발광특성에 미치는 영향을 관찰하였다. 증착조건인 산소/아르곤 가스비, 기판온도에 따라서 박막의 구조적, 화학양론적 물성이 크게 영향을 받고 있었다. 후 열처리 공정에 의하여 발광특성의 향상을 얻을 수 있었다. 산소공공에 의한 청록색 영역의 발광도 관찰되었으며, 박막내의 산소결함이 제어되면서 청색 발광스펙트럼을 얻을 수 있었다.

• 한국재료학회지
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• 제11권9호
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.71-71
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1343-1346
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• 2008

$KSrPO_4$ and $Sr_3(Al_2O_5)Cl_2$ phosphors doped with $Eu^{2+}$ emit a blue and orange-yellow luminescence under ultraviolet (UV) excitation at ~ 400 nm, respectivel, which can be used for making white light emitting diodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 대한화학회지
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• 제50권6호
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• pp.471-476
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• 2006

Ca1-xSrxS:Ce 형광체를 고상법으로 합성하였다. Ca1-xSrxS:Ce 형광체는 430nm와 470nm 영역에서 강한 흡수가 있다. CaS:Ce은 510 nm와 570 nm에서 발광한다. Ca1-xSrxS:Ce에서 Ca이 Sr으로 치환되면 발광 파장은 단파장 이동을 한다. 청색 발광 다이오드를 사용하여 백색 발광 다이오드를 얻는데 Ca1-xSrxS:Ce 형광체는 푸른빛을 띤 녹색과 황색을 방출할 수 있는 형광체로 사용될 수 있다. 백색 발광 다이오드의 적용을 위한 Ca1-xSrxS:Ce 형광체의 광 특성을 확인하였다.