• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.565-568
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• 2008

In this study, a blue-emitting $Sr_2MgSi_2O_7:Eu^{2+}$ (SMS) phosphor for white light-emitting diodes is reported. Through transition of $4f{\rightarrow}5d$ in $Eu^{2+}$, SMS showed a strong blue emission under UV excitation. Additionally, the variation of emission wavelength of SMS is explained by crystal field effect and is supported by rietveld refinement.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.146-150
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• 2010

Because the plasma display panel has used red, green and blue(RGB) phosphors, it has suffer from two intrinsic problems; 1) the cell defect due to the lack of binding force between phosphor particles and 2) mis-discharge because of difference of electrical characteristics among RGB phosphors. In order to control the mechanical and electrical properties of RGB phosphors, frit with $ZnOB_2O_3-SiO_2-Al_2O_3$ system was added to RGB phosphor as sintering additive. The mechanical properties were increased by the amount of frit. The amount of frit under 5 wt% rarely affected dielectric constant. However, there was the limit of amount because of decreasing optical properties seriously; over 3 wt% in red, over 10 wt% in green and blue.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.419-422
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• 2009

The luminescence intensity of calcium sulfide codoped with $Eu^{2+},\;Si^{4+}\;and\;Ga^{3+}$ was investigated as a function of the dopant concentration. An enhancement of the red luminescence resulted from the incorporation of $Si^{4+}\;and\;Ga^{3+}\;into\;CaS:Eu^{2+}.\;The\;non-codoped\;CaS:Eu^{2+}$ converted only 3.0% of the absorbed blue light into luminescence. As the $Si^{4+}\;and\;Ga^{3+}$ were embedded into the host lattice, the luminescence intensity increased and reached a maximum of Q = 10.0% at optimized concentrations of the codopants in CaS. Optimized CaS:$Eu^{2+},Si^{4+},Ga^{3+}$ phosphors were fabricated with blue GaN LED and the chromaticity index of the phosphor-formulated GaN LED was investigated as a function of the wt% of the optimized phosphor.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.424-429
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• 2014

YAG:$Ce^{3+}$ phosphor powders were synthesized using $Al(OH)_3$ seeds by means of a PVA-polymer-solution route. Various types of PVA with different molecular weights (different polymerization) were used. All dried precursor gels were calcined at $500^{\circ}C$ and then heated at $1500^{\circ}C$ in a mix of nitrogen and hydrogen gases. The final powders were characterized via XRD, SEM, PSA, PL, and PKG analyses. The phosphor properties and morphologies of the synthesized powders were dependent on the PVA type. As the molecular weight of the PVA was increased, the particle size gradually decreased with agglomeration, and the luminous intensity of the phosphor increased. However, the phosphor powder prepared from the PVA exhibiting very high molecular weight, showed a 531 nm (blue) shift from the 541 nm (yellow) wavelength of the YAG:$Ce^{3+}$ phosphor. Finally, the synthesized YAG:$Ce^{3+}$ phosphor powder prepared from the PVA with 89,000 - 98,000 molecular weight showed phosphor properties similar to those of a commercial phosphor powder, but without a post-treatment process.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.232-236
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• 2006

The Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd) phosphors were synthesized by solid-state reaction at 1350oC for 10h under reducing atmosphere in order to improve properties of blue emitting phosphors. Compared with commercial blue phosphors, the Y2SiO5:Ce blue phosphors substituted with various elements showed significant enhancement of the emission intensity. Particularly, 1 mol% Li doped Y2SiO5:Ce phosphors indicated the maximum emission intensity in the photoluminescence spectra. Thanks to SEM analyses revealed that the morphology of Y2SiO5:(Ce,Li) blue phosphors was a pseudo-spherical with particle size of 3m.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.949-953
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• 2003

Blue emitting CaWO$_4$ thin films were deposited by rf magnetron sputtering. The effect of sputtering parameters and annealing conditions on the luminescent properties were investigated. Structural and stoichiometric properties of thin films were affected by $O_2$/Ar gas ratio and substrate temperature. Post-annealing caused the phosphor thin films to emit improved luminescent properties. The atomic composition of films might depend on annealing atmosphere, which resulted in the changes of luminescent properties. Blue-green emission that was due to oxygen vacancies was observed. However, by controlling oxygen defects, only blue emission could be obtained.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.406-409
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• 2004

A blue phosphor(ZnS:Cu) is manufactured by solid state reaction for ACPEL(AC powder EL). The effect of artificial defect on phosphor surface on the ZnO phase conversion and resulting luminescence have been studied. It was found that ZnS:Cu could converse to cubic phase more easily due to the formation of artificial defect on 1st fired phosphor by ball-milling process, resulting in improvement of luminescence of phosphor phosphors under the driven EL condition. We found out an optimized ball-mill condition through considering effect of each ball-mill conditions such as milling time and milling rpm on defect. Also we determined relationship between emission luminescence and phase of phosphor based on analyses of crystal structures of phosphors. A significant improvement above 30% was observed in electroluminescence by the artificial defect on ZnS:Cu phosphors compared to non-treated phosphors.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.9
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• pp.12-17
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• 2007

The dynamic false contour noise was analyzed with consideration for the phosphor decay time of an ac PDP by computer simulation based on the measurement of the 1/10 phosphor decay times of the primary colors red, green and blue at the main wavelengths of each phosphor. The noise level of dynamic false contour is strongly dependent on phosphor decay time. The noise level decreases incrementally with the phosphor decay time, whereas the noise width increases. The moving velocity of an object does not affect the noise level. The entire experiment was performed under the condition of 8 subfields ADS driving scheme, 2.5[${\mu}sec$] scan speed, and 5[${\mu}sec$] sustain period with VGA grade panel.