• 한국환경과학회지
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• 제3권2호
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• pp.141-155
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• 1994

담배(Nicotiana tabacum)와 까마중(Solanum migrum)의 솩간 원형질체 융합으로 유도된 켈러스를 재료로하여 캘러스의 전체 단백젤과 틸라코이드막 단백질의 양태변화를 중심으로 식물생장 조절물질과 단색광의 생리적 상호효과를 조사하였다. 여러 단색 광선을 캘러스에 조사하였을때, 적색 및 청색광이 캘러스의 전체 단백질과 킬라코이드막 단백질의 합성을 촉진하였으며 , NAA+$ extrm{GA}_3$ 와 NAA+BA의 조합구에서 캘러스의 전체 단백질과 틸라코이드막 댄백질의 축척이 활발히 일어났으며, NAA+$ extrm{GA}_3$처리구에서 더욱 효과적 이였다. NAA+$ extrm{GA}_3$ 처리구에 청색광, 적색광 및 근적외광을 제각각 처리하였을때 캘러스의 전체 단백질과 킬라코이드막 단백질의 합성은 적색광에 의하여 가장 촉진되었다. 따라서 적색광과 NAA+$ extrm{GA}_3$구의 동시처리가 캘러스의 전체 단백질 및 킬라코이드막 단백질의 합성을 상승적으로 촉진함을 보였다.

• 한국자원식물학회:학술대회논문집
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• 한국자원식물학회 2020년도 추계국제학술대회
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• pp.61-61
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• 2020

This experiment was carried out using artificial bed soil and LED in the plastic film house(irradiation time: 07:00-17:00/day). Seedlings(n=63 per 3.3 m²) of ginseng was planted on May 17, 2018. LED was combined with red and blue light in a 3:1 ratio and irradiated with different light intensity(40-160 µmol/m²/s). Average air temperature from April to September according to the light intensity test was 20.4℃-20.9℃. Average artificial bed soil temperature was 20.1℃-21.7℃. The test area where fluorescent lamp was irradiated tended to be somewhat lower than the LED irradiation area. The chemical properties of the test soil was as follows. pH levels was 6.6-6.7, EC levels 0.9-1.3 dS/m and OM levels 30.6-32.0%. The available P₂O₅ contents was 73.3-302.3 mg/kg. Exchangeable cations K and Ca contents were higher than the allowable ranges and mg content was high in the fluorescent lamp treatment. The photometric characteristics of LED light intensity are as follows. The greater the light intensity, the higher the PPFD(Photosynthetic Photon Flux Density) value, illuminance and solar irradiation. Fluorescent lamp treatment had high illuminance value, but PPFD and solar irradiation were lower than LED intensity 40 µmol/m²/s treatment. The photosynthetic rate increased(2.0-3.8 µmolCO²/m²/s) as the amount of light intensity increased, peaking at 120 µmol/m²/s, and then decreasing. The SPAD (chlorophyll content) value decreased as the amount of light intensity increased, and was the highest at 36.1 in fluorescent lamp treatment. Ginseng germination started on April 5 and took 14-17 days to germinate. The overall germination rate was 68.8-73.6%. The growth of aerial parts(plant height etc.) were generally excellent in the treatment of light intensity of 120-160 µmol/m²/s. The plant height was 41.9 cm, stem length was 24.1 cm, leaf length was 9.8 cm and stem diameter was 5.6 mm. The growth of underground part (root length etc.) was the best in the treatment with 120 µmol/m²/s of light intensity. Due to the root length was long(24.8 cm) and diameter of taproot was thick(18.7 mm), the fresh root weight was the heaviest at 24.8 g. There were no disease incidence such as Alternaria blight, Gray mold and Anthracnose. Disease of Damping-off caused by Rhizoctonia solani occurred 0.6-1.5% and incidence ratio of rusty root ginseng was 30.8-62.3%. It is believed that the reason for the high incidence of rusty root ginseng is that the amount of field moisture capacity of artificial bed soil is larger than the soil. Leaf discoloration rate was 13.7-32.3%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Journal of Plant Biotechnology
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• 제32권4호
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• pp.307-311
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• 2005

자색고구마의 캘러스 배양에서 광의 조사가 안토시아닌 생합성에 미치는 효과를 실험하였다. 잎조직으로부터 자색캘러스는 $0.5\;{\mu}M$ 2,4-D가 첨가된 MS배지, 광조건에서 유도되었다. 광의 세기에 따른 효과는 암 조건에 비교하여 광조건에서 안토시아닌 생합성이 $2{\sim}3$배에 이르는 것으로 나타났으며, 약광 (3000 lux)에서 안토시아닌 생합성량이 높게 나타났다. 이러한 광 조사에 의한 안토시아닌 생합성의 촉진효과는 LED를 이용하며 실험한 결과에서 청색광을 2시간 처리한 경우 3000 lux의 백색광을 처리한 대구조에 비교하여 1.4배의 안토시아닌 생합성 향상효과를 나타냈다.

• 센서학회지
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• 제20권6호
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• pp.368-374
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• 2011

A microfluidic device for real-time monitoring of residual free chlorine and pH in water based on optical absorption is proposed. The device consists of a serpentine micromixer for mixing samples with a reagent, and a photodiode and light emitting diode(LED) for the detection of light absorbance at specific wavelengths, determined for specific reagent combinations. Spectral analyses of the samples mixed with N, N'-diethyl-p-phenylenediamine(DPD) reagent for chlorine determination and bromothymol blue(BTB) for pH measurement are performed, and the wavelengths providing the most useful linear changes in absorbance with chlorine concentration and pH are determined and used to select the combination of LED and photodiode wavelengths for each analyte. In tests using standard solutions, the device is shown to give highly reproducible results, demonstrating the feasibility of the device for the inexpensive and continuous monitoring of water quality parameters with very low reagent consumption.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.69-76
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• 2017

Background: Time-resolved optically stimulated luminescence (TR-OSL) is a very useful method for calculating the lifetimes of crystalline quartz and feldspar. Materials and Methods: A compact TR-OSL system was developed, comprising a heater assembly manufactured using Kanthal wire, 2 powerful blue light-emitting diodes (LED, LXHL-PB02) for optical stimulation equipped with VIS liquid light guides, and a photomultiplier tube combined with an optical filter for luminescence detection. A pulse generated from the data acquisition board (NI PCI 6250) was used to initiate on/off signals in LED and TR-OSL measurements. Results and Discussion: The TR-OSL and background signals measured using this TR-OSL system using quartz samples were very similar to those reported in a previous study. Additionally, the lifetimes of the build-up and TR-OSL signals were calculated as $27.4{\pm}2.2{\mu}s$ and $30.3{\pm}0.6{\mu}s$, respectively, in good agreement with the findings of a previous study. Conclusion: It was concluded that the developed TR-OSL system was very reliable for TR-OSL signal measurements and lifetime calculations.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.616-621
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• 2003

The white-light-emitting organic LED with two-wavelength was fabricated using blue emitting material(DPVBi) and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi(150$\AA$)/Alq$_3$:Rubrene(150$\AA$)/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). The changes of the CIE coordiante strongly depended on the doping concentration of Rubrene and the thickness of NPB layer. We obtained the white-light-emitting OLED close to the pure white color light and the CIE coordinate of the device was (0.315, 0.330) at applied voltage of 13V when the doping concentration of Rubrene was 0.5wt% and the thickness of NPB layer is 200$\AA$. At a current of 100mA/$\textrm{cm}^2$, the quantum efficiency was 0.35%.

• 융복합기술연구소 논문집
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• 제4권1호
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• pp.21-27
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• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.