• Korean Journal of Materials Research
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• v.26 no.9
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• pp.504-511
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• 2016

To prepare $Mn^{4+}$-activated $K_2TiF_6$ phosphor, a precipitation method without using hydrofluoric acid (HF) was designed. In the synthetic reaction, to prevent the decomposition of $K_2MnF_6$, which is used as a source of $Mn^{4+}$ activator, $NH_5F_2$ solution was adopted in place of the HF solution. Single phase $K_2TiF_6$:$Mn^{4+}$ phosphors were successfully synthesized through the designed reaction at room temperature. To acquire high luminance of the phosphor, the reaction conditions such as the type and concentration of the reactants were optimized. Also, the optimum content of $Mn^{4+}$ activator was evaluator based on the emission intensity. Photoluminescence properties such as excitation and emission spectrum, decay curve, and temperature dependence of PL intensity were investigated. In order to examine the applicability of this material to a white LED, the electroluminescence property of a pc-WLED fabricated by combining the $K_2TiF_6$:$Mn^{4+}$ phosphor with a 450 nm blue-LED chip was measured.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.8
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• pp.1773-1779
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• 2015

Shore-to-sea visible light communication using color clustered multiple-input and multiple-output (MIMO) is presented. The proposed maritime visible light communication (MVLC) offers a low-cost, high-speed wireless link for shore-to-sea maritime communications. Each color cluster is comprised of 50 red, green and blue (RGB) light emitting diodes (LEDs) and is modulated using on-off-keying (OOK). Selection combining is performed at the receiver, producing diversity effect within that color cluster. In this paper, we employ sea states (wave height, wind speed, etc.) data from both Pierson-Moskowitz and JONSWAP spectrum models under atmospheric turbulence conditions. Based on the simulation model, the maritime link quality is analysed in terms of coverage distance and bit error rate performance. The results show that the proposed system provides an efficient MVLC, while satisfying International Association of Lighthouse Authorities (IALA) requirements for maritime buoyage system and also offering sufficient illumination from high power LEDs.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.46 no.3
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• pp.259-265
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• 2013

The marine microalgae Nannochloropsis sp. was cultured under a metal halide lamp (MH) or light-emitting diodes (LEDs) of various wavelengths (blue, LB; red, LR; yellow, LY; green, LG; white, LW); changes in growth, total carotenoid, chlorophyll a, amino acid and fatty acid profiles were investigated. LB-exposed cultures exhibited the highest specific growth rate (SGR) (0.32), whereas LY-exposed cultures showed the lowest SGR (0.18). After cultivation for 9 days, the maximum dry cell weight (g/L) of LB-exposed cultures was significantly higher than that of those exposed to other light conditions (LB>MH>LW$${\geq_-}LG{\geq_-}$$LR>LY). The essential amino acid (EAA, %) contents of cultures exposed to LG, LB, LR and MH were higher than those exposed to LY and LW (P<0.05). Eicosapentaenoic acid and n-3 highly unsaturated fatty acid levels were significantly higher in MH-exposed cultures compared to those exposed to LY (P<0.05), with no marked difference compared to those exposed to LB, LG, LR and LW (P>0.05). The total carotenoid content was highest in LR-exposed cultures (18.0 mg/L), whereas MH showed the lowest (11.8 mg/L; P<0.05). Chlorophyll a content was highest in cultures exposed to LR compared to other light sources. These results suggest consistent differences in growth and biochemical composition after exposure to light of different wavelengths.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.40-44
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• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.7
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• pp.2559-2564
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• 2010

The indoor and outdoor lighting industry has become the bigger and more systemized using the semiconductor LED with each control R(Red), G(Green), B(Blue). The communication standard DMX512(ANSI E1.11) protocol of it can control and perform max. 512 lightings, especially 170 lightings in 24 bit true color. As the performance of below 100 lightings is distinguished small-size, this paper proposes a bigger capacity lighting performance above 1,000 using connection to 1 master to 32 slaves. Also, this paper proposes the synchronization method in order to accomplish a designed performance. In proposed method, the master sends the synchronization signal to slaves every 400ms. Slaves receive this signal and use to initialize the timer becoming the basis of DMX512 output. The example of the developed products using proposed method and the operation is introduced.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Korean Journal of Medicinal Crop Science
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• v.20 no.1
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• pp.47-53
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• 2012

This study was conducted to examine effects of plant growth regulators and light resources on the formation of multiple shoot and plant regeneration of Hovenia dulcis var. koreana Nakai. Stem and shoot tip were cultured on MS medium or WPM supplemented with various plant growth regulators. At the single treatment, the highest shoot formation was obtained when stem explants were cultured on WPM supplemented with kinetin $1.0mg{\cdot}L^{-1}$. MS medium containing NAA 0.1 and TDZ $0.1mg{\cdot}L^{-1}$ gave the best results for shoot induction rate and shoot growth in combination treatments. Of the BAP and kinetin tested, BAP $0.5mg{\cdot}L^{-1}$ on WPM was found to be more effective for shoot growth from shoot tip. Under white fluorescent light treatment, shoot growth was much higher than blue, red LED treatments. Root induction from in vitro growth of plantlet was the best on WPM supplemented with $1.0mg{\cdot}L^{-1}$ IBA. The results suggest that selection of plant growth regulators and light resources could be important factor to achieve an efficient in vitro growth.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.160-169
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• 2018

Background: This study aims to develop an integrated optical system that can simultaneously or selectively measure the signals obtained from radioluminescence (RL), thermoluminescence (TL), and optically stimulated luminescence (OSL), which are luminescence phenomena of materials stimulated by radioactivity, heat, and light, respectively. The luminescence mechanism of various materials could be investigated using the glow curves of the luminescence materials. Materials and Methods: RL/TL/OSL integrated measuring system was equipped with a X-ray tube (50 kV, $200{\mu}A$) as an ionizing radiation source to irradiate the sample. The sample substrate was used as a heating source and was also designed to optically stimulate the sample material using various light sources, such as high luminous blue light emitting diode (LED) or laser. The system measured the luminescence intensity versus the amount of irradiation/stimulation on the sample for the purpose of measuring RL, TL and OSL sequentially or by selectively combining them. Optical filters were combined to minimize the interference of the stimulation light in the OSL signal. A long-pass filter (420 nm) was used for 470 nm LED, an ultraviolet-pass filter (260-390 nm) was used for detecting the luminescence of the sample by PM tube. Results and Discussion: The reliability of the system was evaluated using the RL/OSL characteristics of $Al_2O_3:C$ and the RL/TL characteristics of LiF:Mg,Cu,Si, which were used as dosimetry materials. The RL/OSL characteristics of $Al_2O_3:C$ showed relatively linear dose-response characteristics. The glow curve of LiF:Mg,Cu,Si also showed typical RL/OSL characteristics. Conclusion: The reliability of the proposed system was verified by sequentially measuring the RL characteristics of radiation as well as the TL and OSL characteristics by concurrent thermal and optical stimulations. In this study, we developed an integrated measurement system that measures the glow curves of RL/TL/OSL using universal USB-DAQs and the control program.