• Smart Structures and Systems
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• v.16 no.5
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• pp.759-780
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• 2015

Based on the theory of piezoelasticity, the static performance of a piezoelectric bilayer cantilever fully covered with electrodes on the upper and lower surfaces is studied. Three models are considered, i.e., the sensor model, the driving displacement model and the blocking force model. By establishing suitable boundary conditions and proposing an appropriate Airy stress function, the exact solutions for piezoelectric bilayer cantilevers are obtained, and the effect of ambient thermal excitation is taken into account. Since the layer thicknesses and material parameters are distinguished in different layers, this paper gives unified solutions for composite piezoelectric bilayer cantilevers including piezoelectric bimorph and piezoelectric heterogeneous bimorph, etc. For some special cases, the simplifications of the present results are compared with other solutions given by other researches based on one-dimensional constitutive equations, and some amendments have been found. The present investigation shows: (1) for a PZT-4 piezoelectric bimorph, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are about 19.59%, 23.72% and 7.21%, respectively; (2) for a PZT-4-Al piezoelectric heterogeneous bimorph with constant layer thicknesses, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are 9.85%, 11.78% and 4.07%, respectively, and the amendments of the electrode charges induced by an end shear force or an end moment are both 1.04%; (3) for a PZT-4-Al piezoelectric heterogeneous bimorph with different layer thicknesses, the maximum amendment of tip deflection approaches 23.72%, and the maximum amendment of electrode charge approaches 31.09%. The present solutions can be used to optimize bilayer devices, and the Airy stress function can be used to study other piezoelectric cantilevers including multi-layered piezoelectric cantilevers under corresponding loads.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1070-1073
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• 2003

We have studied the characteristics of organic light-emitting diodes(OLEDs) with the PTFE buffer layer. The OLEDs have been based on the molecular compounds, N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and the Polytetrafluoroethylene (PTFE) as a buffer layer. The devices of structure were fabricated ITO/PTFE/TPD(40nm)/$Alq_3$(60nm)/Al( 150nm) to see the effects of the PTFE buffer layer in organic EL devices. The thickness of the PTFE layer varied from 0.5 to 10[nm]. We were measured Current-Voltage-Luminance Characteristics and Luminance efficiency due to the variation of PTFE thickness. the PTFE layer was reported that helped to enhance the hole tunneling injection and effectively impede induim diffusion from the ITO electrode. We have obtained an improvement of luminance efficiency when the PTFE thickness is 0.5[nm] is used. The improvement of efficiency of is expected due to a function of hole-blocking of PTFE in OLEDs.

• The Korean Journal of Physiology and Pharmacology
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• v.20 no.1
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• pp.119-127
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• 2016

Dihydropyridine (DHP) calcium channel blockers (CCBs) have been widely used to treat of several cardiovascular diseases. An excessive shortening of action potential duration (APD) due to the reduction of $Ca^{2+}$ channel current ($I_{Ca}$) might increase the risk of arrhythmia. In this study we investigated the electrophysiological effects of nicardipine (NIC), isradipine (ISR), and amlodipine (AML) on the cardiac APD in rabbit Purkinje fibers, voltage-gated $K^+$ channel currents ($I_{Kr}$, $I_{Ks}$) and voltage-gated $Na^+$ channel current ($I_{Na}$). The concentration-dependent inhibition of $Ca^{2+}$ channel currents ($I_{Ca}$) was examined in rat cardiomyocytes; these CCBs have similar potency on $I_{Ca}$ channel blocking with $IC_{50}$ (the half-maximum inhibiting concentration) values of 0.142, 0.229, and 0.227 nM on NIC, ISR, and AML, respectively. However, ISR shortened both $APD_{50}$ and $APD_{90}$ already at $1{\mu}M$ whereas NIC and AML shortened $APD_{50}$ but not $APD_{90}$ up to $30{\mu}M$. According to ion channel studies, NIC and AML concentration-dependently inhibited $I_{Kr}$ and $I_{Ks}$ while ISR had only partial inhibitory effects (<50% at $30{\mu}M$). Inhibition of $I_{Na}$ was similarly observed in the three CCBs. Since the $I_{Kr}$ and $I_{Ks}$ mainly contribute to cardiac repolarization, their inhibition by NIC and AML could compensate for the AP shortening effects due to the block of $I_{Ca}$.

• Animal cells and systems
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• v.1 no.1
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• pp.81-86
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• 1997

We studied the mechanism of arachidonic acid on the secretion of a neurotransmitter in rat pheochromocytoma PC12 cells. Arachidonic acid inhibited the 70 mM $K^+$-induced secretion of norepinephrine. Arachidonic acid also inhibited the 70 mM $K^+$-induced $Ca^{2+}$ mobilization which is due to the opening of the voltage-sensitive $Ca^{2+}$ channels (VSCC). Both the half maximal inhibitory concentration ($IC_{50}$) of the norepinephrine secretion and VSCC coincided at 30 uM. The major oxidized metabolites of arachidonic acid, prostaglandins did not mimic the inhibitory effect of arachidonic acid. Nordihydroguaiaretic acid (NDGA) and indomethacin which are inhibitors of lipoxygenase and cyclooxygenase, respectively, did not block the inhibitory effect of arachidonic acid. The results suggest that arachidonic acid serves as a signal itself, not in the form of metabolites. The pretreatment of various $K^+$ channel blockers such as 4-aminopyridine, tetraethylarnmonium, glipizide, or glibenclamide also did not show any effect on the inhibitory effect of arachidonic acid. Through these results we suggest that arachidonic acid regulates VSCC directly and affects the secretion of neurotransmitters.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.207-214
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• 2001

Silica glass is a core material for optical fiber in optical telecommunications, but its centrosymmetry eliminates the second order nonlinearity. But it is experimentally well known that the space charge polarization induces the Second Harmonic Generation (SHG) when a strong DC voltage is applied to silica glass for a long period of time with metal blocking electrodes. In this report, the results of a theoretical calculation of the nonlinear optical property caused by the space charge polarization, and a model of a numerical analysis to predict the small chance in nonlinear optical property as functions of time and space are provided. Assuming that amorphous silica is a solid state electrolyte and sodium ion is the only mobile charge carrier, 'Finite Difference Method' was employed for modeling of numerical analysis. The distributions of the concentration of sodium ion and electric field as functions of a normalized length of the specimen and a normalized applied voltage were simulated.

• Journal of Power Electronics
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• v.4 no.4
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• pp.237-245
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• 2004

In this paper, a two-switch high frequency flyback transformer linked zero voltage soft switching PWM DC-DC power converter implemented for distributed DC- feeding power conditioning supplies is proposed and discussed. This switch mode power converter circuit is mainly based on two main active power semiconductor switches and a main flyback high frequency transformer linked DC-DC converter in which, two passive lossless quasi-resonant snubbers with pulse current regeneration loops for energy recovery to the DC supply voltages composed of a three winding auxiliary high frequency pulse transformer, auxiliary capacitors and auxiliary diodes for inductive energy recovery discharge blocking due to snubber capacitors are introduced to achieve zero voltage soft switching from light to full load conditions. It is clarified that the passive resonant snubber-assisted soft switching PWM DC-DC power converter has some advantages such as simple circuit configuration, low cost, simple control scheme, high efficiency and lowered noises due to the soft switching commutation. Its operating principle is also described using each mode equivalent circuit. To determine the optimum resonant snubber circuit parameters, some practical design considerations are discussed and evaluated in this paper. Moreover, through experimentation the practical effectiveness of the proposed soft switching PWM DC-DC power converter using IGBTs is evaluated and compared with a hard switching PWM DC-DC power converter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.7
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• pp.643-649
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• 2014

In order to demonstrate the possibility of applying an ionic polymer metal composite (IPMC) to a finger exoskeleton, pinching motion analysis was performed for a thumb-index finger dummy actuated by IPMC actuators. The IPMC actuators of 5mm in width and 40mm in length with 2.4mm thickness generated 1.52N of blocking force for the applying voltage of 4.0V. Three actuators were installed on the three rotary joint of an index finger, and one actuator was installed on one proximal joint. Positions of each joint and finger tip were recorded on the video camera, and motion was analyzed. Power supply to the index finger actuators preceded power supply to the thumb actuator, and key pinching motion was accomplished in 180s. Tip pinching was accomplished in 135s as power supply to the thumb preceded power supply to the index finger.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.432.1-432.1
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• 2016

We demonstrated that the power conversion efficiency (PCE) of bilayer solar cell was significantly enhanced by inserting interfacial layer between the organic bilayer film and the Al electrode. Moreover, the water contact angle shows that the bilayer solar cells suffer from the undesirable surface component which limits the charge transport to the Al electrode. The AFM measurement has revealed that the pre- and post-thermal annealing treatments results in different morphologies of the interfacial layer which is critical for the higher PCE of the bilayer solar cells. Furthermore we have investigated the electrical properties of the bilayer solar cells and obtained insights into the detailed device mechanisms. The transient photovoltage measurements suggests that the significantly enhanced Voc is caused by reducing the recombination at the interface between the organic films and the Al electrode. By inserting the TiO2 layer between the bilayer film and Al electrode, the open circuit voltage (Voc) was increased from 0.37 to 0.66V. Consequently, the power conversion efficiency (PCE) of bilayer solar cells was significantly enhanced from 1.23% to 3.71%. As the results, the TiO2 interfacial layer can be used to form an ohmic contact layer, serveing as a blocking layer to prevent the penetration of the Al, and to reduce the recombination at the interface.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.688-691
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• 2004

In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.