• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.450.1-450.1
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• 2014

열에너지를 전기에너지로 변환하거나 또는 전기에너지를 열에너지로 직접 변환하는 열전 변환 기술이 주목받고 있다. 열전 변환 효율은 성능지수($ZT={\alpha}^2{\sigma}T{\kappa}^{-1}$)로 평가되며, 여기서 ${\alpha}$, ${\sigma}$, ${\kappa}$, T는 각각 열전재료의 제벡계수, 전기전도도, 열전도도 및 절대온도이다. 따라서 우수한 열전재료는 높은 제벡계수와 전기전도도 그리고 낮은 열전도도를 가져야 한다. Bismuth telluride는 상온영역에서 성능지수가 높은 재료로서, $Bi_2Te_3$에 $Bi_2Se_3$와 고용체를 형성하면 원자의 치환으로 포논산란에 의해 열전도도가 낮아지고, 도핑으로 전기적 특성을 조절하여 성능지수를 향상시킬 수 있다. 본 연구에서는 진공밀폐 용해법으로 $Bi_2Te_{2.85}Se_{0.15}:I_m$ (m=0.0~0.045) 고용체를 합성하여 상분석을 실시하고, 전자 이동특성 및 열전 특성을 평가하였다.

• Journal of Magnetics
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• v.10 no.4
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• Journal of Pharmaceutical Investigation
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• v.37 no.2
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• pp.79-84
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• 2007

This study was aimed to establish analytical method of Bi to develop a guideline of the bioequivalence test of tripotassium dicitrato bismuthate (TDB). For this purpose, a simple, specific and sensitive inductively coupled plasma-mass spectrometry (ICP/MS) method were developed and validated in human plasma. Various concentrations of bismuth standard solution (0-25ng/mL) were prepared with distilled water and human blank plasma. To 10mL of the volumetric flasks, 2mL of blank plasma was added with 8ml of distilled water. Bi standard solution was added to prepare the calibration samples and injected into ICP-MS. The plasma samples obtained from volunteers given 3 tablets of bismuth (total 900mg as TDB) were analyzed as described above. As a result, the coefficients of variation were <20% in quantitation limit (0.2 ng/mL) and <15% at the rest of concentrations. The stability test by repeated freezing-thawing cycles showed that the samples were stable only for 24hr. The stability tested for samples with a short-term period of storage at room temperature and pre-treatment prior to the analysis showed very stable over 24hr. In 8 healthy Korean subjects received Denol tablets at the dose of 900mg bismuth, AUC, $C_{max},\;T_{max}$ and half-life $(t_{1/2})$ were determined to be $198.33{\pm}173.78 ng{\cdot}hr/mL,\;64.48{\pm}27.06 ng/mL,\;0.52{\pm}0.21 hr,\;and\;5.15{\pm}2.67 hr$, respectively, from the plasma bismuth concentration-time curves. In conclusion, the method was suitable for the determination of bismuth in human plasma samples and could be applied to bioequivalence test of bismuth tablet.

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.287-289
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• 2000

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1887-1890
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• 2014

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.885-886
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• 2003

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.87-93
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• 1986

Yttria-bismuth-stabilized zirconia was investigated with respect to the amount of $Bi_2O_3$ addition in the ran-ge of 0.5~5mol% to the base composition of $(ZrO_2)_{0.92}(Y_2O_3)_{0.08}.Bismuth was introduced into the ma-terial with $Bi_2O_3-SiO_2$ glasses in order to reduce the evaporation of components. The sinterbility evaporation of components phase formation and microstructure were evaluated depending on the amount of $Bi_2O_3-SiO_2$ glass addition. Two probe A. C conductivity measurement was subjected to all the specimens and the result was discussed on the possible substitution of $Bi^{3+}$ for $Zr^{4+}$ and interistial $Si^{4+}$ in the fluorite structure of zirconia crystal there-upon the possible change in the capability of oxygen transference within the material. It was found that the addition of $Bi_2O_3$ could improve the sinterbility of material very much while not so much.oxygen sensing material suitable for relative low temperature firing.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.61-66
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• 2012

Bismuth(Bi) nanoparticles were synthesized at room temperature by a modified polyol process using bismuth(III) carbonate basic as precursor. In addition, some characteristics of the synthesis with respect to the exchange of a capping agent/surface stabilizer and solvent type were observed. When polyvinylpyrroldone was added, the finest Bi nanoparticles were synthesized in diethylene glycol(DEG), while the coarsest nanoparticles were formed in polyethylene glycol(PEG). The particle size immediately after synthesis was proportionate to final particle size which was determined by particle growth through coalescence and aggregation during drying. As a result, the finest Bi particles with the diameter range of several tens of nanometers - 300 nm were finally obtained in DEG. Regardless of the type of capping agent/surface stabilizer, extensive coalescence and aggregation behavior occurred in PEG, resulting in final products agglomerated with coarse particles.