• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.21-30
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• 2023

This work presents a correlation between the behavior of formic acid oxidation (FAO) on various Bi-modified Pt(poly) disk electrodes and their morphologies observed on Bi-modified Pt(111) disk electrodes using electrochemical scanning tunneling microscopy (EC-STM) to understand the effects of Bi on Pt. To distinguish the FAO activities of Bi on Pt and plain Pt around Bi, additional Pt was intentionally deposited using two different routes: direct route and iodine route. In direct route, Pt was directly deposited on Bi islands and plain Pt sites around Bi islands, while in iodine route, Pt was exclusively deposited on Bi islands by protecting plain Pt sites with adsorbed iodine. Thus, a comparison of FAO performances on the two Bi-modified Pt electrodes with additional Pt (deposited in the different ways) disclosed a difference in FAO performances on plain Pt sites and Bi islands. When Bi coverage was ~0.04, the Bi deposits were scattered Bi islands enhancing FAO on Pt(poly). The additional Pt deposits using direct route increased FAO efficiency, while the ones using iodine route slightly decreased FAO current. The EC-STM observations indicated that Pt deposits around Bi islands, not on Bi islands, were responsible for the FAO current increase on Bi-modified Pt(poly). The FAO efficiency on Bi-modified Pt(poly) with a Bi coverage of ~0.25 increased by a factor of 2. However, the additional Pt deposits using the two Pt deposition routes notably decreased the FAO current. The dependency of FAO on Bi coverage was discussed in terms of electronic effect and ensemble effect.

• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• 한국분말재료학회지
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• 제17권2호
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• pp.136-141
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• 2010

Bismuth-telluride based $(Bi_{0.2}Sb_{0.8})_2Te_3$ thermoelectric powders were fabricated by two-step planetary milling process which produces bimodal size distribution ranging $400\;nm\;{\sim}\;2\;{\mu}m$. The powders were reduced in hydrogen atmosphere to minimize oxygen contents which cause degradation of thermoelectric performance by decreasing electrical conductivity. Oxygen contents were decreased from 0.48% to 0.25% by the reduction process. In this study, both the as-synthesized and the reduced powders were consolidated by the spark plasma sintering process at $350^{\circ}C$ for 10 min at the heating rate of $100^{\circ}C/min$ and then their thermoelectric properties were investigated. The sintered samples using the reduced p-type thermoelectric powders show 15% lower specific electrical resistivity ($0.8\;m{\Omega}{\cdot}cm$) than those of the as-synthesized powders while Seebeck coefficient and thermal conductivity do not change a lot. The results confirmed that ZT value of thermoelectric performance at room temperature was improved by 15% due to high electric conductivity caused by the controlled oxygen contents present at bismuth telluride materials.

• 대한환경공학회지
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• 제33권2호
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• pp.137-142
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• 2011

본 연구는 실험실 조건에서 비스무스 필름 전극(Bismuth film Electrode)을 사용한 양극산화벗김분석법(Anodic Stripping Voltammetry)에서 비스무스의 첨가 농도와 적정 전해질을 선택하여 최적 조건을 산출하고 최적조건을 기반으로 현장에서 중금속 모니터링 가능 여부를 확인하고자하였다. 비스무스(Bi)와 혼합중금속(Pb, Cd, Zn) 실험을 통해 정확한 중금속의 측정을 위해서는 측정하고자 하는 중금속보다 1:1 이상의 비스무스가 첨가되어야 하는 것으로 나타났다. 전해질 테스트에서는 0.1 M acetate buffer (pH 4.5), 0.1 M chloroacetate buffer (pH 2.0), 0.1 M HCl (pH 2.0), 0.1 M $HNO_3$ (pH 2.0) 중 0.1 M acetate buffer가 비스무스 필름전극을 이용한 중금속 분석에 적용 가능한 것으로 나타났다. 현장 적용시, 중금속 표준용액 100 ppb 첨가 테스트 결과 Pb은 36~45 ppb, Cd는 84~91 ppb, Zn은 90~98 ppb가 측정되었다. 첨가한 중금속보다 낮은 농도로 중금속이 측정되는 것은 현장수 매질 효과에 의한 것으로 파악되었으며, 추후 현장수 매질과 중금속 측정의 상관관계에 대한 연구가 진행될 예정이다.

• 한국세라믹학회지
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• 제35권10호
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.13-15
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• 2005

The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

• 한국분말재료학회지
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• 제19권4호
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• pp.285-290
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• 2012

The present study was focused on the analysis of the electric and thermal properties of spark plasma sintered $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric material. The crystal structure, microstructure, electric and thermal properties of the sintered body were evaluated by measuring XRD, SEM, electric resistivity, Hall effect and thermal conductivity. The $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic crystal structure. The c-axis of the $Bi_{0.5}Sb_{1.5}Te_3$ crystal aligned in a parallel direction with applied pressure during spark plasma sintering. The degree of the crystal alignment increased with increasing sintering temperature and sintering time. The electric resistivity and thermal conductivity of the $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic characteristics result from crystal alignment.

• 한국세라믹학회지
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• 제51권4호
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• pp.278-282
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• 2014

Due to high ionic conductivity and favorable oxygen electrocatalysis, doped $Bi_2O_3$ systems are promising candidates as solid oxide fuel cell cathode materials. Recently, several researchers reported reasonably low cathode polarization resistance by adding electronically conducting materials such as (La,Sr)$MnO_3$ (LSM) or Ag to doped $Bi_2O_3$ compositions. Despite extensive research efforts toward maximizing cathode performance, however, the inherent catalytic activity and electrochemical reaction pathways of these promising materials remain largely unknown. Here, we prepare a symmetrical structure with identically sized $Y_{0.5}Bi_{1.5}O_3$/LSM composite electrodes on both sides of a YSZ electrolyte substrate. AC impedance spectroscopy (ACIS) measurements of electrochemical cells with varied cathode compositions reveal the important role of bismuth oxide phase for oxygen electrocatalysis. These observations aid in directing future research into the reaction pathways and the site-specific electrocatalytic activity as well as giving improved guidance for optimizing SOFC cathode structures with doped $Bi_2O_3$ compositions.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2613-2619
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• 2020

This work investigated the gamma-ray shielding performance, and the physical and mechanical properties of poly (methyl methacrylate) (PMMA) composites embedded with 0-44.0 wt% bismuth trioxide (Bi₂O₃) fabricated by the fast ultraviolet (UV) curing method. The results showed that the addition of Bi₂O₃ had significantly improved the gamma shielding ability of PMMA composites. Mass attenuation coefficient and half-value layer were examined using five gamma sources (Cs-137, Ba-133, Cd-109, Co-57, and Co-60). The high loading of Bi₂O₃ in the PMMA samples improved the micro-hardness to nearly seven times that of the pure PMMA. With these enhancements, it was demonstrated that PMMA/Bi₂O₃ composites are promising gamma shielding materials. Furthermore, the fast UV curing exerts its great potential in significantly shortening the production cycle of shielding material to enable rapid manufacturing.