• 대한기계학회논문집B
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• 제26권8호
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• pp.1102-1114
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• 2002

An electret filter is composed of permanently charged electret fibers and is widely used in applications requiring high collection efficiency and low-pressure drop. In this work, the collection efficiency of the filter media used in manufacturing cabin air filters was investigated by using poly-disperse particles when submicron particles were loaded. Long-term experiments were conducted by applying two different charging states, which were spray electrification and charge equilibrium by bipolar ionization. In order to investigate the effect of particle loading in filter media, NaCl particles were generated from 0.1% and 1% solutions by an atomizer. Liquid DOS particles were used to evaluate the effect of liquid particles on the collection efficiency of an electret filter. The results show significant effect of charge amount and size distribution of loading particles on the collection performance of a filter media in submicron region. Smaller particles loaded in electret fibers cause a more rapid degradation in collection efficiency and have lower minimum efficiency with time. The pressure drop of a filter media do rarely increase when the collection efficiency decreases to the minimum value. For the larger particles charged by spray electrification, which have charge amounts more than that of Boltzmann equilibrium charge distribution, the pressure drop of a filter media slowly increases in comparison with that of equilibrium charged particles. For DOS particles it is shown that the charging level of an electret filter severely decreases and the collection efficiency is below 10% in some particle size range.

• Journal of Power Electronics
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• 제18권5호
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• pp.1595-1607
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• 2018

In this paper, a hierarchical control strategy is introduced to control a new three-port multidirectional DC-DC converter for integrating an energy storage system (ESS) to a bipolar DC microgrid (BPDCMG). The proposed converter provides a voltage-balancing function for the BPDCMG and adjusts the states of charge (SoC) of the ESS. Previous studies tend to balance the voltage of the BPDCMG buses with active sources or by transferring power from one bus to another. Furthermore, the batteries available in BPDCMGs were charged equally by both buses. However, this power sharing method does not guarantee efficient operation of the whole system. In order to achieve a higher efficiency and lower energy losses, a triple-layer hierarchical control strategy, including a primary droop controller, a secondary voltage restoration controller and a tertiary optimization controller are proposed. Thanks to the multi-functional operation of the proposed converter, its conversion stages are reduced. Furthermore, the efficiency and weight of the system are both improved. Therefore, this converter has a significant capability to be used in portable BPDCMGs such as electric DC ships. The converter modes are analyzed and small-signal models of the converter are extracted. Comprehensive simulation studies are carried out and a BPDCMG laboratory setup is implemented in order to validate the effectiveness of the proposed converter and its hierarchical control strategy. Simulation and experimental results show that using the proposed converter mitigates voltage imbalances. As a result, the system efficiency is improved by using the hierarchical optimal power flow control.

• 공업화학
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• 제33권6호
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• pp.618-623
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• 2022

분리판은 반응물 및 전자를 전달하고 부산물인 물과 열을 배출하며, 막전극접합체의 지지체 역할을 하는 고분자전해질 연료전지의 핵심 구성요소이다. 따라서 분리판의 유로 구조는 연료전지의 성능을 향상시키는데 중요한 역할을 한다. 본 연구에서는 압축률이 다른 구리 폼을 cathode 분리판에 적용한 25 cm² 단위 전지를 이용하여 성능 평가를 수행하였다. 금속 폼의 압축률이 증가할수록 총 저항이 감소하였으며, 특히 전하전달과 물질전달 저항이 사형 유로에 비해 크게 개선되어 중전류밀도 및 고전류밀도 영역에서 전압 손실을 줄일 수 있었다. 가압한 공기를 사용한 사형 유로 구조의 경우 연료전지의 성능이 압축한 금속 폼(S3)을 적용한 유로와 중전류밀도 영역까지는 큰 차이가 없었으나, 고전류밀도 영역에서는 유로 구조의 한계로 낮은 성능을 보였다.

• 대한전자공학회논문지SD
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• 제46권12호
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• pp.105-112
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• 2009

본 논문에서는 $0.35{\mu}m$ Bipolar-CMOS-DMOS(BCD)공정으로 설계한 스마트 파워 IC 내의 가드링 코너 영역에서 발생하는 비정상적인 정전기 불량을 관측하고 이를 분석하였다. 칩내에서 래치업(Latch-up)방지를 위한 고전압 소자의 가드링에 연결되어 있는 Vcc단과 Vss 사이에 존재하는 기생 다이오드에서 발생한 과도한 전류 과밀 현상으로 정전기 내성 평가에서 Machine Model(MM)에서는 200V를 만족하지 못하는 불량이 발생하였다. Optical Beam Induced Resistance Charge(OBIRCH)와 Scanning Electronic Microscope(SEM)을 사용하여 불량이 발생한 지점을 확인하였고, 3D T-CAD 시뮬레이션으로 원인을 검증하였다. 시뮬레이션 결과를 통해 Local Oxidation(LOCOS)형태의 Isolation구조에서 과도한 정전기 전류가 흘렀을 때 코너영역의 형태에 따라 문제가 발생하는 것을 검증하였다. 이를 통해 정전기 내성이 개선된 가드링 코너 디자인 방법을 제안하였고 제품에 적용한 결과, MM 정전기 내성 평가에서 200V이상의 결과를 얻었다. 통계적으로 Test chip을 분석한 결과 기존의 결과 대비 20%이상 정전기 내성이 향상된 것을 확인 할 수 있었다. 이 결과를 바탕으로 BCD공정을 사용하는 칩 설계 시, 가드링 구조의 정전기 취약 지점을 Design Rule Check(DRC) 툴을 사용하여 자동으로 찾을 수 있는 설계 방법도 제안하였다. 본 연구에서 제안된 자동 검증방법을 사용하여, 동종 제품에 적용한 결과 24개의 에러를 검출하였으며, 수정 완료 제품은 동일한 정전기 불량은 발생하지 않았고 일반적인 정전기 내성 요구수준인 HBM 2000V / MM 200V를 만족하는 결과를 얻었다.

• 한국염색가공학회:학술대회논문집
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• 한국염색가공학회 2012년도 제46차 학술발표회
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• pp.71-71
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• 2012

To control luminescence emission property, a novel series of strong fluorescent fluorin-boron complexes were synthesized in higher yield. The resulting structural analysis was completed. Small molecules with a built-in fluorine-boron core structural architecture has been attracted considered attention as the key emissive elements due to the their good properties such as bipolar charge transport and high photo efficiency. Thus, new type of fluorine-boron(F-B) complexes are designed and prepared. Changing the substituent position on fluorophore ring provided a deep understanding on the relationship between structure and optical properties.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.971-973
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• 1999

채널길이에 따른 n-채널과 p-채널 poly-Si TFT's를 제작하고 그 전기적 특성을 분석하였다. n-채널과 p-채널소자는 공통적으로 기생바이폴라트 랜지스터현상(parasitic bipolar transistor action)에 의한 kink 효과, 전하공유(charge sharing)에 의한 문턱전압의 감소, 소오스와 드레인 근처의 결함에 의한 RSCE(reverse short channel effect) 효과, 수직전계에 의한 이동도의 감소, 그리고 avalanche 증식에 의한 S-swing의 감소가 나타났다. n-채널은 p-채널 보다 더 큰 kink, 이동도, S-swing의 변화가 나타났으며, 높은 드레인 전압에서의 문턱전압의 이동은 avalanche 증식(multiplication)에 의한 것이 더 우세한 것으로 나타났다. 누설전류의 경우, 채널 길이가 짧아짐에 따라 n-채널은 큰 증가를 나타냈으나 p-채널의 경우는 변화가 나타나지 않았다.

• 전기학회논문지
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• 제61권5호
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• pp.717-720
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• 2012

Various types of dielectric-barrier-discharge (DBD) devices have been developed for diverse applications for the last decade. In this study, a flat non-thermal DBD micro plasma source under atmospheric pressure has been developed. The flat-panel type plasma is generated by bipolar pulse voltages, and driving gas is air. In this study, the plasma source was investigated with intensified charge coupled device (ICCD) images and Optical Emission Spectroscopy (OES). The micro discharges are generated on the crossed electrodes. For theoretical analysis, 2-dimensional fluid simulation was performed. The plasma source can be driven in air, and thus the operation cost is low and the range of application is wide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.405-408
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• 2004

In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.