• Title/Summary/Keyword: BioFET

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Electrochemical Biosensors for U-Healthcare (유비쿼터스 헬스케어를 위한 전기화학 바이오센서)

  • Kim, Sang-Kyu;Chung, Bong-Hyun
    • Journal of Biomedical Engineering Research
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    • v.29 no.5
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    • pp.337-342
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    • 2008
  • To date, many researchers have developed a variety of biosensors to detect the biomolecular interactions. Recently, electrochemical biosensors have been attracting great interest as one of key technologies in a ubiquitous healthcare (U-healthcare) system since they are highly sensitive and feasible to miniaturize. Here we overview the current electrochemical biosensors based on strip-type, nanowire/nanotube, field effect transistor (FET), and nanogap electrode.

Flexible biosensors based on field-effect transistors and multi-electrode arrays: a review

  • Kim, Ju-Hwan;Park, Je-Won;Han, Dong-Jun;Park, Dong-Wook
    • Journal of Semiconductor Engineering
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    • v.1 no.3
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    • pp.88-98
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    • 2020
  • As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

A Review Study of Biosensors applicable to Wellness Wear (웰니스 의류에 적용 가능한 바이오센서 동향 연구)

  • Kim, Hyo-Jin
    • Journal of Digital Convergence
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    • v.15 no.11
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    • pp.231-243
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    • 2017
  • This paper provides a review of the electrical sensing biosensors and examine research cases of biosensors based on clothing and textiels. A biosensor which can measure bio-signals is a device that senses the physical and chemical characteristics of biological materials by using biological sensing materials. Therefore, wellness wear that is closely integrated with the user's real life will play an important role in achieving U-Health. The biosensors' unique feature which can be differentiated from the existing sensors is it's using of selective reactions and binding of biological substances. The electrical sensing biosensors are very small in size due to the processing of electrical signals, which can be used to create ubiquitous. Therefore, it is necessary to study electrical sensing biosensors that are easy to miniaturize to develop wellness wear. This paper describes the electrical sensing biosensor (an electrochemical method nanowire/carbon nanotube FET method) in detail. Finally, the future direction of biosensors to be applied to wellness wear is suggested.

Reduced Graphene Oxide Field-effect Transistor as a Transducer for Ion Sensing Application

  • Nguyen, T.N.T.;Tien, Nguyen Thanh;Trung, Tran Quang;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.562-562
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    • 2012
  • Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

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Highly Sensitive Flexible Organic Field-Effect Transistor Pressure Sensors Using Microstructured Ferroelectric Gate Dielectrics

  • Kim, Do-Il;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.277.2-277.2
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    • 2014
  • For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.

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Electrokinetic deposition of individual carbon nanotube onto an electrode gap

  • Han Chang-Soo;Seo Hee-Won;Lee Hyung-Woo;Kim Soo-Hyun;Kwak Yoon-Keun
    • International Journal of Precision Engineering and Manufacturing
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    • v.7 no.1
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    • pp.42-46
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    • 2006
  • This paper presents a method for deposition an individual carbon nanotube (CNT). The alignment of a single CNT is very useful to perform studies related to applications in FET (Field Emitted Transistor), SET (Single Electron Transistor) and to make chemical sensor as well as bio sensors. In this study, we developed the deposition method of a CNT individualized in a solution. Using the electrokinetic method, we found the optimum conditions to assemble the nanotube and discussed about plausible explanation for the assembling mechanism. These results will be available to use for making the CNT sensor device.

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

  • Lee, Ryoongbin;Kwon, Dae Woong;Kim, Sihyun;Kim, Dae Hwan;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.141-146
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    • 2017
  • In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement (스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서)

  • Jung, Hanyung;Lee, Junghoon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.114-121
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    • 2014
  • We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

Polydiacetylene-Based Chemo-/Biosensor of Label Free System with Various Sensing Tools (다양한 감지 방법을 갖고 있는 폴리디아세틸렌 기반 비표지 화학/바이오센서)

  • Park, Hyun-Kyu;Park, Hyun-Gyu;Chung, Bong-Hyun
    • KSBB Journal
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    • v.22 no.6
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    • pp.409-413
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    • 2007
  • Polydiacetylene(PDA)-based sensors possess a number of properties that can be successfully applied for label-free detection system. PDA is one of the most attractive color-generating materials, with growing applications as sensors. Here we introduce various PDA-based devices, used as biosensor, chemosensor, thermosensor, and optoelectronics sensor. In general, PDA liposomes and films are closely packed and properly designed for polymerization via 1,4-addition reaction to form an ene-yne alternating polymer chain. PDA-based two/three dimensional structures have been used for colorimetric or fluorescent devices, sensing biological as well as chemical components. This color-generating material also present a very high charge carrier mobility, allowing its application as field-effect transistor (FET). The immobilized PDA structures or films have distinct advantages for the detection of low concentration target molecules over the aqueous solution-based detection systems. In the present review, reported detection methods by using various PDA structures are summarized with updated references.